IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 15.720
NA - Nord America 14.499
AS - Asia 7.881
SA - Sud America 1.695
AF - Africa 178
Continente sconosciuto - Info sul continente non disponibili 66
OC - Oceania 7
Totale 40.046
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Nazione #
US - Stati Uniti d'America 14.135
RU - Federazione Russa 8.637
SG - Singapore 2.913
UA - Ucraina 1.632
DE - Germania 1.470
BR - Brasile 1.448
CN - Cina 1.331
HK - Hong Kong 1.207
VN - Vietnam 1.069
SE - Svezia 972
FI - Finlandia 640
IN - India 550
GB - Regno Unito 487
FR - Francia 470
IT - Italia 392
IE - Irlanda 302
NL - Olanda 262
CA - Canada 190
JP - Giappone 107
MX - Messico 105
BD - Bangladesh 92
AR - Argentina 89
BE - Belgio 80
PL - Polonia 80
IQ - Iraq 79
IR - Iran 68
ES - Italia 67
EU - Europa 64
TR - Turchia 60
ZA - Sudafrica 56
KR - Corea 44
AT - Austria 42
CZ - Repubblica Ceca 40
IL - Israele 40
EC - Ecuador 39
LT - Lituania 39
PK - Pakistan 39
SA - Arabia Saudita 38
EE - Estonia 37
MA - Marocco 31
AE - Emirati Arabi Uniti 28
VE - Venezuela 28
PH - Filippine 27
TW - Taiwan 23
PY - Paraguay 22
JO - Giordania 20
UZ - Uzbekistan 20
ID - Indonesia 19
JM - Giamaica 19
TN - Tunisia 19
CO - Colombia 18
KZ - Kazakistan 17
EG - Egitto 16
KE - Kenya 15
CL - Cile 14
DZ - Algeria 14
UY - Uruguay 14
PE - Perù 13
CH - Svizzera 11
AZ - Azerbaigian 10
LB - Libano 10
MY - Malesia 10
NP - Nepal 10
AL - Albania 8
DO - Repubblica Dominicana 8
PT - Portogallo 8
SN - Senegal 8
TH - Thailandia 7
TT - Trinidad e Tobago 7
AM - Armenia 6
BO - Bolivia 6
BZ - Belize 6
ET - Etiopia 6
HN - Honduras 6
HU - Ungheria 6
PA - Panama 6
PS - Palestinian Territory 6
BA - Bosnia-Erzegovina 5
KG - Kirghizistan 5
KW - Kuwait 5
RS - Serbia 5
SK - Slovacchia (Repubblica Slovacca) 5
AU - Australia 4
CR - Costa Rica 4
MD - Moldavia 4
OM - Oman 4
BY - Bielorussia 3
DK - Danimarca 3
GY - Guiana 3
LV - Lettonia 3
MT - Malta 3
NG - Nigeria 3
NI - Nicaragua 3
NZ - Nuova Zelanda 3
QA - Qatar 3
SV - El Salvador 3
SY - Repubblica araba siriana 3
BB - Barbados 2
BH - Bahrain 2
BW - Botswana 2
Totale 40.014
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Città #
Jacksonville 1.758
Chandler 1.755
San Jose 1.750
Singapore 1.659
Hong Kong 1.163
Ashburn 970
Council Bluffs 706
Moscow 564
Wilmington 498
Dallas 488
Boardman 424
Beijing 413
The Dalles 358
Helsinki 333
Dublin 299
Ho Chi Minh City 277
Hefei 265
Ann Arbor 259
Dong Ket 249
Los Angeles 247
Kronberg 240
Dearborn 231
Lauterbourg 210
Santa Clara 188
Hanoi 187
New York 184
Woodbridge 173
Munich 167
Brooklyn 127
Seattle 126
São Paulo 123
Trento 123
Phoenix 101
Shanghai 86
Pune 85
Frankfurt am Main 84
Houston 79
Brussels 77
Tokyo 65
Toronto 65
Turku 63
Orem 60
Southend 57
Warsaw 57
Falls Church 54
Atlanta 52
Augusta 52
Rio de Janeiro 51
San Mateo 50
Montreal 49
Secaucus 49
Denver 43
Haiphong 42
Da Nang 41
London 41
Mexico City 41
Rome 40
Boston 39
Poplar 39
Redwood City 38
Mountain View 36
Chennai 35
Falkenstein 35
St Petersburg 35
Belo Horizonte 34
Buffalo 34
Miami 34
Brno 30
Johannesburg 30
Vienna 30
Guangzhou 29
Baghdad 26
Brasília 26
Chicago 26
Stockholm 26
Tianjin 26
Mumbai 24
Norwalk 24
Porto Alegre 24
Curitiba 22
Hanover 21
Leawood 21
Manchester 21
Ankara 20
Cheyenne 20
San Francisco 20
Milan 19
Ardabil 18
Hillsboro 18
Kyiv 18
Ottawa 18
Amsterdam 17
Bologna 17
Campinas 17
Salvador 17
Tashkent 17
Zanjan 17
Amman 16
Hải Dương 16
Overland Park 16
Totale 19.064
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 924
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 392
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 274
Analytical methodology development for Silicon rich oxide chemical physical characterization 267
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 261
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 260
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 259
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 256
Arsenic uphill diffusion during shallow junction formation 250
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 250
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 248
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 239
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 233
Dynamic SIMS Characterization of Ge1-xSnx alloy 228
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 227
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 226
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 223
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 221
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 220
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 220
Analytical methodology development for SRO chemical physical characterization 219
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 219
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 218
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 217
Activated dopant effect on low energy SIMS depth profiling 216
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 214
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 214
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 214
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 213
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 212
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 211
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 211
Boron pile-up phenomena during ultra shallow junction formation 210
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 210
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 210
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 210
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 209
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 207
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 207
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 207
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 201
Highly sensitive detection of inorganic contamination 201
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 200
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 199
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 198
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 198
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 198
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 197
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 197
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 196
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 196
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 195
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 193
Boron ultra low energy SIMS depth profiling improved by rotating stage 190
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 190
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 189
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 188
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 187
Vacancy-engineering implants for high boron activation in silicon on insulator 186
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 186
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 186
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 184
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 184
ispettiva di sorveglianza 04-05 Luglio 2013 184
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 182
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 182
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 181
Morphology structure and interfaces in the preparation of films by SUMBE for gas sensing 181
ispettiva di sorveglianza 6-7 giugno 2012. 180
Highly Sensitive Detection of Inorganic Contamination 180
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 179
Real-time observation and optimization of tungsten ALD process cycle 177
Past, current and future of biodegradable plastics: innovative applications 175
Hydrogen diffusion in GaAs1−xNx 175
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 175
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 173
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 172
Dynamic SIMS Characterization of Ge1-xSnx alloy 172
Diffusion and electrical activation of indium in silicon 172
Investigation on indium diffusion in silicon 171
Complementary metrology within a European joint laboratory 171
Characterization of Junction Activation and Deactivation Using non-Equilibrium 171
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 171
Point defect engineering study of phosphorus ion implanted germanium 171
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 170
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 170
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 168
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 168
Ultra shallow junction analysis for technology nodes beyond 65nm 168
Al-Sn thin film deposited by pulsed laser ablation 167
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 167
A comparison between mass spectrometry techniques on oxynitrides 165
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 164
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 162
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 162
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 162
Cronache di laboratorio/Monitoraggio ambientale: Caccia ai pollini allergenici 162
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 160
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 159
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 159
Totale 20.693
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Categoria #
all - tutte 168.619
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 168.619
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021412 0 0 0 0 0 0 0 0 0 0 0 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20257.153 57 179 812 224 332 88 282 431 2.476 802 1.000 470
2025/202618.058 673 972 1.142 1.129 707 778 2.844 6.877 985 994 884 73
Totale 40.211