IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
NA - Nord America 8.471
EU - Europa 5.374
AS - Asia 2.600
Continente sconosciuto - Info sul continente non disponibili 64
SA - Sud America 23
AF - Africa 6
OC - Oceania 6
Totale 16.544
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Nazione #
US - Stati Uniti d'America 8.384
UA - Ucraina 1.599
DE - Germania 1.052
SE - Svezia 909
HK - Hong Kong 768
SG - Singapore 618
FI - Finlandia 523
IN - India 402
CN - Cina 329
GB - Regno Unito 296
IE - Irlanda 292
IT - Italia 276
VN - Vietnam 249
FR - Francia 117
RU - Federazione Russa 98
BE - Belgio 75
CA - Canada 69
IR - Iran 66
EU - Europa 64
JP - Giappone 43
IL - Israele 35
CZ - Repubblica Ceca 34
KR - Corea 32
AT - Austria 23
NL - Olanda 22
TW - Taiwan 20
BR - Brasile 18
LT - Lituania 14
MX - Messico 14
PL - Polonia 11
CH - Svizzera 9
ES - Italia 8
TR - Turchia 6
BD - Bangladesh 4
MY - Malesia 4
PH - Filippine 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
BZ - Belize 3
HU - Ungheria 3
NZ - Nuova Zelanda 3
PT - Portogallo 3
AL - Albania 2
AM - Armenia 2
AZ - Azerbaigian 2
BO - Bolivia 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
ZA - Sudafrica 2
AR - Argentina 1
BG - Bulgaria 1
BY - Bielorussia 1
CL - Cile 1
EC - Ecuador 1
EE - Estonia 1
EG - Egitto 1
JO - Giordania 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MA - Marocco 1
MD - Moldavia 1
OM - Oman 1
PA - Panama 1
PK - Pakistan 1
TH - Thailandia 1
TM - Turkmenistan 1
UZ - Uzbekistan 1
Totale 16.544
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Città #
Chandler 1.755
Jacksonville 1.754
Hong Kong 765
Singapore 512
Wilmington 498
Boardman 380
Ashburn 372
Dublin 292
Helsinki 281
Ann Arbor 259
Dong Ket 249
Kronberg 240
Dearborn 231
Woodbridge 173
Seattle 115
Santa Clara 113
Beijing 98
Trento 92
Pune 81
Shanghai 79
Brooklyn 77
Phoenix 77
Brussels 73
Houston 62
New York 61
Los Angeles 60
Southend 57
Falls Church 54
Augusta 52
San Mateo 50
Toronto 50
Munich 47
Redwood City 38
Mountain View 36
Secaucus 35
Brno 30
Miami 24
Norwalk 24
Guangzhou 22
Vienna 22
Hanover 21
Leawood 21
Cheyenne 20
Rome 20
Frankfurt am Main 19
Ardabil 18
Tokyo 17
Zanjan 17
London 16
Overland Park 16
Saint Petersburg 16
Hefei 14
Ottawa 14
Tappahannock 14
Auburn Hills 13
Bologna 13
Buffalo 13
Taipei 13
Falkenstein 12
Mexico City 12
St Petersburg 12
Portland 11
Nanjing 10
Sunnyvale 10
Bolzano 9
Milan 9
Cologne 7
Costa Mesa 6
Groot-ammers 6
Kunming 6
Owings Mills 6
Redmond 6
Venezia 6
Zhengzhou 6
Gloucester 5
Hamburg 5
Lana 5
Wuhan 5
Des Moines 4
Gif-sur-yvette 4
Gunzenhausen 4
Malakoff 4
Mysore 4
North Bergen 4
Padova 4
Paris 4
Sacramento 4
San Jose 4
Andover 3
Atlanta 3
Auckland 3
Banqiao 3
Baselga di Pinè 3
Chengdu 3
Dubai 3
Elk Grove Village 3
Fuzhou 3
Gazi 3
Grado 3
Henderson 3
Totale 9.815
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 806
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 288
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 145
Dynamic SIMS Characterization of Ge1-xSnx alloy 121
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 116
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 114
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 108
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 106
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 106
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 104
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 104
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 100
Analytical methodology development for Silicon rich oxide chemical physical characterization 97
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 97
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 96
Real-time observation and optimization of tungsten ALD process cycle 94
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 93
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 92
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 91
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 91
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 90
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 89
Highly sensitive detection of inorganic contamination 89
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 88
Diffusion and electrical activation of indium in silicon 88
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 87
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 86
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 86
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 86
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 86
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 85
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 85
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 85
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 85
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 84
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 84
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 84
Vacancy-engineering implants for high boron activation in silicon on insulator 83
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 83
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 83
Hydrogen diffusion in GaAs1−xNx 82
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 82
Arsenic uphill diffusion during shallow junction formation 81
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 81
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 81
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 81
Analytical methodology development for SRO chemical physical characterization 81
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 80
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 79
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 79
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 78
Investigation on indium diffusion in silicon 78
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 77
Influence of Co-implantation on the activation and diffusion of ultra-shallow extension implants 77
Characterization of Junction Activation and Deactivation Using non-Equilibrium 77
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 77
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 76
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 76
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 75
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 75
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 75
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 74
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 74
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 74
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 74
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 74
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 74
Ultra shallow junction analysis for technology nodes beyond 65nm 74
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 73
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 73
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 73
ispettiva di sorveglianza 04-05 Luglio 2013 73
Highly Sensitive Detection of Inorganic Contamination 73
Boron pile-up phenomena during ultra shallow junction formation 72
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 72
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 72
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 72
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 72
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 72
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 72
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 72
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 71
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 71
Valutazione dell’influenza dei ceppi di lievito sul profilo aromatico del Vin Santo di Gambellara mediante PTR-MS e analisi statistica multivariata 71
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 71
Activated dopant effect on low energy SIMS depth profiling 70
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 70
ULSI Technology and Materials: Quantitative Answers by Combined Mass Spectrometry Surface Techniques 70
ToF-SIMS and XPS charcterisation of urban aerosols for pollution studies 69
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 69
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 69
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 69
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 69
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 68
Complementary metrology within a European joint laboratory 68
Structural analyses of thermal annealed SRO/SiO2 superlattices 68
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 68
On the photoresist stripping and damage of ultralow k dielectric materials using remote H2- and D2-based discharges 68
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 68
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 68
Totale 9.107
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Categoria #
all - tutte 99.091
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 99.091
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.699 0 0 0 0 0 165 321 27 286 438 286 176
2020/20213.414 1.043 16 255 181 260 104 319 24 23 607 170 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20251.687 57 179 812 224 332 83 0 0 0 0 0 0
Totale 16.687