IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
NA - Nord America 11.140
EU - Europa 8.504
AS - Asia 5.565
SA - Sud America 1.476
AF - Africa 117
Continente sconosciuto - Info sul continente non disponibili 65
OC - Oceania 6
Totale 26.873
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Nazione #
US - Stati Uniti d'America 10.868
RU - Federazione Russa 2.252
SG - Singapore 2.232
UA - Ucraina 1.623
BR - Brasile 1.305
DE - Germania 1.241
CN - Cina 992
SE - Svezia 930
HK - Hong Kong 904
FI - Finlandia 605
IN - India 494
GB - Regno Unito 421
VN - Vietnam 390
IT - Italia 352
IE - Irlanda 296
NL - Olanda 254
CA - Canada 156
FR - Francia 153
BE - Belgio 79
JP - Giappone 79
MX - Messico 72
IR - Iran 68
AR - Argentina 65
EU - Europa 64
PL - Polonia 62
BD - Bangladesh 57
ES - Italia 46
IQ - Iraq 44
TR - Turchia 43
ZA - Sudafrica 41
CZ - Repubblica Ceca 38
IL - Israele 38
KR - Corea 38
EE - Estonia 37
LT - Lituania 37
AT - Austria 35
EC - Ecuador 33
PK - Pakistan 27
MA - Marocco 23
SA - Arabia Saudita 22
AE - Emirati Arabi Uniti 20
TW - Taiwan 20
PY - Paraguay 16
UZ - Uzbekistan 16
VE - Venezuela 15
CO - Colombia 13
KE - Kenya 13
JM - Giamaica 11
KZ - Kazakistan 11
UY - Uruguay 11
CH - Svizzera 10
JO - Giordania 10
TN - Tunisia 10
DZ - Algeria 7
SN - Senegal 7
AM - Armenia 6
AZ - Azerbaigian 6
BZ - Belize 6
CL - Cile 6
EG - Egitto 6
NP - Nepal 6
PE - Perù 6
PH - Filippine 6
PT - Portogallo 6
TT - Trinidad e Tobago 6
AL - Albania 5
BO - Bolivia 5
DO - Repubblica Dominicana 5
ID - Indonesia 5
LB - Libano 5
MY - Malesia 5
PA - Panama 5
KW - Kuwait 4
OM - Oman 4
PS - Palestinian Territory 4
SK - Slovacchia (Repubblica Slovacca) 4
AU - Australia 3
BA - Bosnia-Erzegovina 3
HN - Honduras 3
HU - Ungheria 3
MT - Malta 3
NZ - Nuova Zelanda 3
BB - Barbados 2
BY - Bielorussia 2
CR - Costa Rica 2
ET - Etiopia 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
MD - Moldavia 2
NG - Nigeria 2
SV - El Salvador 2
AO - Angola 1
BG - Bulgaria 1
BW - Botswana 1
CI - Costa d'Avorio 1
DK - Danimarca 1
GA - Gabon 1
GE - Georgia 1
GP - Guadalupe 1
Totale 26.863
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Città #
Chandler 1.755
Jacksonville 1.754
Singapore 1.483
Hong Kong 901
Ashburn 754
Moscow 563
Wilmington 498
Dallas 478
Boardman 423
Beijing 351
Helsinki 300
Dublin 294
The Dalles 293
Hefei 264
Ann Arbor 259
Dong Ket 249
Kronberg 240
Dearborn 231
Woodbridge 173
Munich 167
Santa Clara 163
Los Angeles 161
New York 156
Trento 123
Brooklyn 122
Seattle 122
São Paulo 115
Phoenix 95
Pune 84
Shanghai 83
Brussels 77
Houston 74
Turku 63
Toronto 58
Southend 57
Falls Church 54
Augusta 52
Tokyo 51
Rio de Janeiro 50
San Mateo 50
Ho Chi Minh City 49
Secaucus 48
Warsaw 46
Atlanta 41
Montreal 39
Redwood City 38
Boston 36
Mountain View 36
London 35
Hanoi 34
Mexico City 34
St Petersburg 34
Falkenstein 33
Belo Horizonte 32
Denver 32
Poplar 31
Rome 31
Brno 30
Frankfurt am Main 29
Miami 29
Chennai 27
Orem 27
Vienna 26
Norwalk 24
Brasília 23
Buffalo 23
Guangzhou 23
Tianjin 22
Curitiba 21
Hanover 21
Johannesburg 21
Leawood 21
Cheyenne 20
Chicago 20
Council Bluffs 20
Porto Alegre 20
San Francisco 20
Stockholm 20
Ardabil 18
Mumbai 18
Ottawa 17
Zanjan 17
Overland Park 16
Saint Petersburg 16
Salvador 16
Campinas 15
Hillsboro 15
Milan 15
Tashkent 15
Ankara 14
Baghdad 14
Bologna 14
Portland 14
Ribeirão Preto 14
Tappahannock 14
Amsterdam 13
Auburn Hills 13
Charlotte 13
Guarulhos 13
Kyiv 13
Totale 14.683
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 851
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 330
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 204
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 188
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 187
Analytical methodology development for Silicon rich oxide chemical physical characterization 183
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 179
Dynamic SIMS Characterization of Ge1-xSnx alloy 177
Arsenic uphill diffusion during shallow junction formation 174
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 171
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 167
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 162
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 162
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 159
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 157
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 157
Analytical methodology development for SRO chemical physical characterization 156
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 150
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 149
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 147
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 146
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 144
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 143
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 143
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 143
Highly sensitive detection of inorganic contamination 143
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 142
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 142
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 141
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 140
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 140
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 140
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 140
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 139
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 138
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 138
Activated dopant effect on low energy SIMS depth profiling 138
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 138
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 138
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 137
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 136
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 136
Boron pile-up phenomena during ultra shallow junction formation 134
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 134
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 134
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 133
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 133
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 132
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 132
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 131
Boron ultra low energy SIMS depth profiling improved by rotating stage 131
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 130
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 128
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 128
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 128
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 128
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 127
Highly Sensitive Detection of Inorganic Contamination 126
Past, current and future of biodegradable plastics: innovative applications 125
Hydrogen diffusion in GaAs1−xNx 125
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 125
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 125
Real-time observation and optimization of tungsten ALD process cycle 124
ispettiva di sorveglianza 04-05 Luglio 2013 124
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 124
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 123
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 123
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 122
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 122
Morphology structure and interfaces in the preparation of films by SUMBE for gas sensing 122
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 120
Investigation on indium diffusion in silicon 119
Vacancy-engineering implants for high boron activation in silicon on insulator 119
Characterization of Junction Activation and Deactivation Using non-Equilibrium 119
Diffusion and electrical activation of indium in silicon 119
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 118
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 118
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 117
Al-Sn thin film deposited by pulsed laser ablation 116
ispettiva di sorveglianza 6-7 giugno 2012. 115
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 113
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 113
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 112
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 112
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 111
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 111
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 110
Complementary metrology within a European joint laboratory 110
Valutazione dell’influenza dei ceppi di lievito sul profilo aromatico del Vin Santo di Gambellara mediante PTR-MS e analisi statistica multivariata 110
Dynamic SIMS Characterization of Ge1-xSnx alloy 110
ToF-SIMS and XPS charcterisation of urban aerosols for pollution studies 109
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 109
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 109
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 107
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 107
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 107
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 107
Cronache di laboratorio/Monitoraggio ambientale: Caccia ai pollini allergenici 107
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 106
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 106
Totale 14.234
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Categoria #
all - tutte 143.321
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 143.321
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.659 0 0 0 0 0 104 319 24 23 607 170 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20257.153 57 179 812 224 332 88 282 431 2.476 802 1.000 470
2025/20264.872 673 972 1.142 1.129 707 249 0 0 0 0 0 0
Totale 27.025