IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 15.697
NA - Nord America 13.470
AS - Asia 7.828
SA - Sud America 1.691
AF - Africa 177
Continente sconosciuto - Info sul continente non disponibili 66
OC - Oceania 7
Totale 38.936
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Nazione #
US - Stati Uniti d'America 13.128
RU - Federazione Russa 8.636
SG - Singapore 2.899
UA - Ucraina 1.632
DE - Germania 1.470
BR - Brasile 1.446
CN - Cina 1.308
HK - Hong Kong 1.200
VN - Vietnam 1.069
SE - Svezia 972
FI - Finlandia 638
IN - India 550
GB - Regno Unito 486
FR - Francia 462
IT - Italia 384
IE - Irlanda 302
NL - Olanda 262
CA - Canada 179
JP - Giappone 102
MX - Messico 102
BD - Bangladesh 91
AR - Argentina 88
BE - Belgio 80
PL - Polonia 80
IQ - Iraq 79
IR - Iran 68
ES - Italia 64
EU - Europa 64
TR - Turchia 60
ZA - Sudafrica 56
KR - Corea 43
AT - Austria 42
CZ - Repubblica Ceca 40
IL - Israele 40
EC - Ecuador 39
LT - Lituania 39
PK - Pakistan 39
SA - Arabia Saudita 38
EE - Estonia 37
MA - Marocco 31
AE - Emirati Arabi Uniti 28
VE - Venezuela 28
PH - Filippine 27
PY - Paraguay 22
TW - Taiwan 22
JO - Giordania 20
ID - Indonesia 19
TN - Tunisia 19
UZ - Uzbekistan 19
CO - Colombia 18
KZ - Kazakistan 17
JM - Giamaica 16
EG - Egitto 15
KE - Kenya 15
DZ - Algeria 14
UY - Uruguay 14
CL - Cile 13
PE - Perù 13
CH - Svizzera 11
AZ - Azerbaigian 10
LB - Libano 10
MY - Malesia 10
NP - Nepal 10
AL - Albania 8
DO - Repubblica Dominicana 8
PT - Portogallo 8
SN - Senegal 8
TH - Thailandia 7
AM - Armenia 6
BO - Bolivia 6
BZ - Belize 6
ET - Etiopia 6
HU - Ungheria 6
PA - Panama 6
PS - Palestinian Territory 6
TT - Trinidad e Tobago 6
BA - Bosnia-Erzegovina 5
HN - Honduras 5
KG - Kirghizistan 5
KW - Kuwait 5
RS - Serbia 5
SK - Slovacchia (Repubblica Slovacca) 5
AU - Australia 4
CR - Costa Rica 4
MD - Moldavia 4
OM - Oman 4
BY - Bielorussia 3
DK - Danimarca 3
GY - Guiana 3
LV - Lettonia 3
MT - Malta 3
NG - Nigeria 3
NZ - Nuova Zelanda 3
QA - Qatar 3
SV - El Salvador 3
SY - Repubblica araba siriana 3
BB - Barbados 2
BH - Bahrain 2
BW - Botswana 2
GE - Georgia 2
Totale 38.906
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Città #
Jacksonville 1.758
Chandler 1.755
Singapore 1.656
San Jose 1.581
Hong Kong 1.156
Ashburn 957
Moscow 564
Wilmington 498
Dallas 481
Boardman 424
Beijing 399
The Dalles 358
Helsinki 333
Dublin 299
Ho Chi Minh City 277
Hefei 265
Ann Arbor 259
Dong Ket 249
Kronberg 240
Los Angeles 240
Dearborn 231
Lauterbourg 210
Hanoi 187
New York 177
Santa Clara 176
Woodbridge 173
Munich 167
Brooklyn 126
Seattle 124
São Paulo 123
Trento 123
Phoenix 100
Shanghai 86
Pune 85
Frankfurt am Main 84
Houston 79
Brussels 77
Tokyo 65
Toronto 63
Turku 63
Orem 59
Southend 57
Warsaw 57
Falls Church 54
Augusta 52
Rio de Janeiro 51
San Mateo 50
Atlanta 49
Secaucus 49
Montreal 45
Denver 43
Haiphong 42
Da Nang 41
London 41
Poplar 39
Boston 38
Mexico City 38
Redwood City 38
Rome 38
Mountain View 36
Chennai 35
Falkenstein 35
St Petersburg 35
Belo Horizonte 34
Miami 32
Brno 30
Johannesburg 30
Vienna 30
Buffalo 29
Guangzhou 29
Baghdad 26
Brasília 26
Stockholm 26
Tianjin 26
Chicago 25
Mumbai 24
Norwalk 24
Porto Alegre 24
Council Bluffs 22
Curitiba 22
Hanover 21
Leawood 21
Manchester 21
Ankara 20
Cheyenne 20
San Francisco 20
Milan 19
Ardabil 18
Hillsboro 18
Kyiv 18
Amsterdam 17
Campinas 17
Ottawa 17
Salvador 17
Zanjan 17
Amman 16
Hải Dương 16
Overland Park 16
Portland 16
Saint Petersburg 16
Totale 18.110
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 920
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 388
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 269
Analytical methodology development for Silicon rich oxide chemical physical characterization 263
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 256
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 254
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 253
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 248
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 247
Arsenic uphill diffusion during shallow junction formation 244
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 244
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 231
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 227
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 223
Dynamic SIMS Characterization of Ge1-xSnx alloy 222
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 221
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 220
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 217
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 216
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 215
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 215
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 214
Analytical methodology development for SRO chemical physical characterization 214
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 212
Activated dopant effect on low energy SIMS depth profiling 212
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 210
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 210
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 210
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 210
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 208
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 207
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 207
Boron pile-up phenomena during ultra shallow junction formation 206
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 206
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 205
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 204
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 204
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 204
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 204
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 201
Highly sensitive detection of inorganic contamination 198
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 196
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 196
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 194
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 194
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 194
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 194
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 194
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 193
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 193
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 191
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 190
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 189
Boron ultra low energy SIMS depth profiling improved by rotating stage 186
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 185
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 184
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 184
Vacancy-engineering implants for high boron activation in silicon on insulator 183
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 183
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 182
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 182
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 180
ispettiva di sorveglianza 04-05 Luglio 2013 180
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 179
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 177
Real-time observation and optimization of tungsten ALD process cycle 176
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 176
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 176
ispettiva di sorveglianza 6-7 giugno 2012. 176
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 175
Morphology structure and interfaces in the preparation of films by SUMBE for gas sensing 174
Highly Sensitive Detection of Inorganic Contamination 174
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 172
Hydrogen diffusion in GaAs1−xNx 171
Diffusion and electrical activation of indium in silicon 171
Past, current and future of biodegradable plastics: innovative applications 169
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 169
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 169
Characterization of Junction Activation and Deactivation Using non-Equilibrium 168
Dynamic SIMS Characterization of Ge1-xSnx alloy 168
Point defect engineering study of phosphorus ion implanted germanium 168
Investigation on indium diffusion in silicon 167
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 166
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 166
Complementary metrology within a European joint laboratory 165
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 165
Ultra shallow junction analysis for technology nodes beyond 65nm 165
Al-Sn thin film deposited by pulsed laser ablation 164
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 164
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 163
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 163
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 162
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 161
A comparison between mass spectrometry techniques on oxynitrides 160
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 159
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 157
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 157
Cronache di laboratorio/Monitoraggio ambientale: Caccia ai pollini allergenici 157
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 156
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 155
Totale 20.266
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Categoria #
all - tutte 160.962
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 160.962
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.189 0 0 0 0 0 0 0 0 0 607 170 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20257.153 57 179 812 224 332 88 282 431 2.476 802 1.000 470
2025/202616.948 673 972 1.142 1.129 707 778 2.844 6.877 985 841 0 0
Totale 39.101