IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
NA - Nord America 8.089
EU - Europa 5.223
AS - Asia 1.709
Continente sconosciuto - Info sul continente non disponibili 64
SA - Sud America 8
AF - Africa 5
OC - Oceania 5
Totale 15.103
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Nazione #
US - Stati Uniti d'America 8.021
UA - Ucraina 1.598
DE - Germania 1.016
SE - Svezia 908
FI - Finlandia 506
IN - India 402
HK - Hong Kong 353
IE - Irlanda 291
GB - Regno Unito 277
CN - Cina 272
VN - Vietnam 249
IT - Italia 247
SG - Singapore 230
FR - Francia 116
RU - Federazione Russa 95
IR - Iran 66
EU - Europa 64
BE - Belgio 62
CA - Canada 51
JP - Giappone 43
IL - Israele 33
CZ - Repubblica Ceca 32
KR - Corea 32
AT - Austria 20
NL - Olanda 20
TW - Taiwan 16
MX - Messico 14
CH - Svizzera 9
BR - Brasile 7
LT - Lituania 7
PL - Polonia 7
ES - Italia 6
TR - Turchia 6
MY - Malesia 4
AU - Australia 3
BZ - Belize 3
PT - Portogallo 3
NZ - Nuova Zelanda 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
ZA - Sudafrica 2
AR - Argentina 1
MA - Marocco 1
MD - Moldavia 1
OM - Oman 1
PH - Filippine 1
SA - Arabia Saudita 1
Totale 15.103
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Città #
Chandler 1.755
Jacksonville 1.754
Wilmington 498
Ashburn 367
Boardman 356
Hong Kong 350
Dublin 291
Helsinki 266
Ann Arbor 259
Dong Ket 249
Kronberg 240
Dearborn 231
Singapore 185
Woodbridge 173
Seattle 115
Beijing 95
Trento 82
Pune 81
Shanghai 78
Brooklyn 77
Phoenix 77
Houston 62
Brussels 61
New York 57
Southend 57
Falls Church 54
Augusta 52
San Mateo 50
Toronto 44
Santa Clara 41
Los Angeles 40
Redwood City 38
Mountain View 36
Secaucus 32
Brno 30
Miami 24
Norwalk 24
Guangzhou 22
Hanover 21
Leawood 21
Cheyenne 20
Munich 20
Vienna 20
Ardabil 18
Rome 17
Tokyo 17
Zanjan 17
Overland Park 16
Saint Petersburg 16
Tappahannock 14
Auburn Hills 13
Bologna 13
Buffalo 13
Hefei 13
Taipei 13
Falkenstein 12
Mexico City 12
St Petersburg 12
Frankfurt am Main 11
Portland 11
Nanjing 10
Sunnyvale 10
Bolzano 9
Cologne 7
Milan 7
Costa Mesa 6
Groot-ammers 6
Kunming 6
Owings Mills 6
Redmond 6
Venezia 6
Gloucester 5
Hamburg 5
Lana 5
Des Moines 4
Gif-sur-yvette 4
Gunzenhausen 4
London 4
Malakoff 4
Mysore 4
North Bergen 4
Padova 4
Paris 4
Sacramento 4
San Jose 4
Wuhan 4
Andover 3
Atlanta 3
Baselga di Pinè 3
Chengdu 3
Elk Grove Village 3
Fuzhou 3
Gazi 3
Grado 3
Henderson 3
Kepala Batas 3
Kumar 3
Lausanne 3
Madrid 3
Mitsui 3
Totale 8.827
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 802
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 135
Dynamic SIMS Characterization of Ge1-xSnx alloy 112
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 106
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 101
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 101
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 99
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 98
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 93
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 92
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 89
Analytical methodology development for Silicon rich oxide chemical physical characterization 88
Real-time observation and optimization of tungsten ALD process cycle 87
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 86
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 85
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 85
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 85
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 82
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 81
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 81
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 81
Vacancy-engineering implants for high boron activation in silicon on insulator 80
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 80
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 79
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 79
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 79
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 78
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 78
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 77
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 77
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 77
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 76
Arsenic uphill diffusion during shallow junction formation 76
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 76
Analytical methodology development for SRO chemical physical characterization 76
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 76
Hydrogen diffusion in GaAs1−xNx 75
Influence of Co-implantation on the activation and diffusion of ultra-shallow extension implants 75
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 75
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 75
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 74
Highly sensitive detection of inorganic contamination 74
Investigation on indium diffusion in silicon 73
Characterization of Junction Activation and Deactivation Using non-Equilibrium 73
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 73
Diffusion and electrical activation of indium in silicon 73
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 72
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 72
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 71
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 71
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 71
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 71
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 70
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 70
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 70
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 70
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 70
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 70
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 69
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 69
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 69
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 69
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 68
Valutazione dell’influenza dei ceppi di lievito sul profilo aromatico del Vin Santo di Gambellara mediante PTR-MS e analisi statistica multivariata 68
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 68
ToF-SIMS and XPS charcterisation of urban aerosols for pollution studies 67
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 67
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 67
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 67
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 67
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 67
Highly Sensitive Detection of Inorganic Contamination 67
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 66
Boron pile-up phenomena during ultra shallow junction formation 66
Structural analyses of thermal annealed SRO/SiO2 superlattices 66
On the photoresist stripping and damage of ultralow k dielectric materials using remote H2- and D2-based discharges 66
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 66
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 66
ULSI Technology and Materials: Quantitative Answers by Combined Mass Spectrometry Surface Techniques 66
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 66
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 65
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 65
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 65
Complementary metrology within a European joint laboratory 65
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 65
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 65
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 65
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 65
Ultra shallow junction analysis for technology nodes beyond 65nm 65
Pollen discrimination and classification by Fourier transform infrared (FT-IR) microspectroscopy and machine learning 64
Uphill diffusion of ultra-low energy boron implants in preamorphised silicon and SOI 64
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 64
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 64
Activated dopant effect on low energy SIMS depth profiling 64
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 64
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 64
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 63
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 63
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 63
Effect of hydrogen incorporation temperature in in plane -engineered GaAsN/GaAsN:H heterostructures 62
Totale 8.182
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Categoria #
all - tutte 87.921
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 87.921
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.050 0 0 27 12 312 165 321 27 286 438 286 176
2020/20213.414 1.043 16 255 181 260 104 319 24 23 607 170 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/2025241 57 179 5 0 0 0 0 0 0 0 0 0
Totale 15.241