IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
NA - Nord America 15.853
EU - Europa 15.812
AS - Asia 7.904
SA - Sud America 1.717
Continente sconosciuto - Info sul continente non disponibili 231
AF - Africa 178
OC - Oceania 8
Totale 41.703
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Nazione #
US - Stati Uniti d'America 15.462
RU - Federazione Russa 8.637
SG - Singapore 2.920
UA - Ucraina 1.632
DE - Germania 1.471
BR - Brasile 1.456
CN - Cina 1.337
HK - Hong Kong 1.209
VN - Vietnam 1.070
SE - Svezia 1.021
FI - Finlandia 640
IN - India 550
GB - Regno Unito 492
FR - Francia 473
IT - Italia 409
IE - Irlanda 302
NL - Olanda 263
CA - Canada 199
MX - Messico 110
JP - Giappone 109
AR - Argentina 94
BD - Bangladesh 94
BE - Belgio 81
PL - Polonia 80
IQ - Iraq 79
ES - Italia 69
IR - Iran 68
EU - Europa 64
TR - Turchia 60
ZA - Sudafrica 56
AT - Austria 44
KR - Corea 44
EC - Ecuador 42
CZ - Repubblica Ceca 41
IL - Israele 40
LT - Lituania 39
PK - Pakistan 39
EE - Estonia 38
SA - Arabia Saudita 38
MA - Marocco 31
AE - Emirati Arabi Uniti 28
VE - Venezuela 28
PH - Filippine 27
TW - Taiwan 24
CO - Colombia 22
PY - Paraguay 22
JM - Giamaica 20
JO - Giordania 20
UZ - Uzbekistan 20
ID - Indonesia 19
TN - Tunisia 19
KZ - Kazakistan 17
CL - Cile 16
EG - Egitto 16
KE - Kenya 15
DZ - Algeria 14
UY - Uruguay 14
PE - Perù 13
CH - Svizzera 12
MY - Malesia 11
AZ - Azerbaigian 10
LB - Libano 10
NP - Nepal 10
PT - Portogallo 10
AL - Albania 9
TT - Trinidad e Tobago 9
DO - Repubblica Dominicana 8
HN - Honduras 8
SN - Senegal 8
TH - Thailandia 7
AM - Armenia 6
BO - Bolivia 6
BZ - Belize 6
ET - Etiopia 6
HU - Ungheria 6
PA - Panama 6
PS - Palestinian Territory 6
RS - Serbia 6
AU - Australia 5
BA - Bosnia-Erzegovina 5
CR - Costa Rica 5
KG - Kirghizistan 5
KW - Kuwait 5
RO - Romania 5
SK - Slovacchia (Repubblica Slovacca) 5
SV - El Salvador 5
GP - Guadalupe 4
MD - Moldavia 4
NI - Nicaragua 4
OM - Oman 4
BY - Bielorussia 3
DK - Danimarca 3
GT - Guatemala 3
GY - Guiana 3
LV - Lettonia 3
MT - Malta 3
NG - Nigeria 3
NZ - Nuova Zelanda 3
QA - Qatar 3
SY - Repubblica araba siriana 3
Totale 41.503
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Città #
San Jose 1.762
Jacksonville 1.760
Chandler 1.755
Council Bluffs 1.690
Singapore 1.664
Hong Kong 1.165
Ashburn 984
Moscow 565
Wilmington 499
Dallas 496
Boardman 424
Beijing 416
The Dalles 358
Helsinki 333
Dublin 299
Ho Chi Minh City 278
Hefei 265
Ann Arbor 259
Los Angeles 252
Dong Ket 249
Kronberg 240
Dearborn 232
Lauterbourg 210
Santa Clara 202
New York 191
Hanoi 187
Woodbridge 173
Munich 167
Seattle 129
Brooklyn 127
São Paulo 125
Trento 123
Phoenix 122
Shanghai 86
Pune 85
Frankfurt am Main 84
Houston 80
Brussels 77
Toronto 66
Tokyo 65
Turku 63
Orem 61
Atlanta 58
Southend 57
Warsaw 57
Falls Church 54
Augusta 52
Rio de Janeiro 52
Montreal 51
San Mateo 50
Secaucus 49
Denver 43
Mexico City 43
Haiphong 42
Rome 42
Da Nang 41
London 41
Boston 40
Poplar 39
Redwood City 38
Buffalo 36
Mountain View 36
Chennai 35
Falkenstein 35
St Petersburg 35
Belo Horizonte 34
Miami 34
Vienna 31
Brno 30
Johannesburg 30
Guangzhou 29
Brasília 27
Chicago 27
Baghdad 26
Stockholm 26
Tianjin 26
Mumbai 24
Norwalk 24
Porto Alegre 24
Milan 23
Curitiba 22
San Francisco 22
Hanover 21
Leawood 21
Manchester 21
Ankara 20
Cheyenne 20
Ardabil 18
Hillsboro 18
Kyiv 18
Ottawa 18
Amsterdam 17
Bologna 17
Campinas 17
Salvador 17
Tashkent 17
Zanjan 17
Amman 16
Hải Dương 16
Overland Park 16
Totale 20.178
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 931
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 396
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 280
Analytical methodology development for Silicon rich oxide chemical physical characterization 274
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 271
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 267
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 266
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 263
Arsenic uphill diffusion during shallow junction formation 258
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 257
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 255
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 250
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 240
Dynamic SIMS Characterization of Ge1-xSnx alloy 238
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 234
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 232
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 232
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 230
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 227
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 226
Analytical methodology development for SRO chemical physical characterization 225
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 225
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 224
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 222
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 221
Activated dopant effect on low energy SIMS depth profiling 221
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 221
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 219
Boron pile-up phenomena during ultra shallow junction formation 219
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 219
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 218
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 218
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 218
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 217
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 217
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 216
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 215
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 214
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 212
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 211
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 208
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 207
Highly sensitive detection of inorganic contamination 206
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 205
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 205
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 204
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 204
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 204
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 203
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 203
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 203
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 202
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 200
Boron ultra low energy SIMS depth profiling improved by rotating stage 197
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 197
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 195
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 194
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 194
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 193
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 192
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 192
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 191
Vacancy-engineering implants for high boron activation in silicon on insulator 190
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 190
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 189
ispettiva di sorveglianza 04-05 Luglio 2013 188
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 187
Highly Sensitive Detection of Inorganic Contamination 185
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 184
Morphology structure and interfaces in the preparation of films by SUMBE for gas sensing 184
Past, current and future of biodegradable plastics: innovative applications 183
ispettiva di sorveglianza 6-7 giugno 2012. 183
Hydrogen diffusion in GaAs1−xNx 182
Real-time observation and optimization of tungsten ALD process cycle 181
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 180
Dynamic SIMS Characterization of Ge1-xSnx alloy 179
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 179
Complementary metrology within a European joint laboratory 178
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 178
Characterization of Junction Activation and Deactivation Using non-Equilibrium 177
Point defect engineering study of phosphorus ion implanted germanium 177
Diffusion and electrical activation of indium in silicon 177
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 175
Investigation on indium diffusion in silicon 175
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 174
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 174
Ultra shallow junction analysis for technology nodes beyond 65nm 174
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 173
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 173
Al-Sn thin film deposited by pulsed laser ablation 172
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 172
Material Characterization of 4H-SiC - Influence of Protection Layer Thickness on Dopant Depth During Ion-Implantation 169
A comparison between mass spectrometry techniques on oxynitrides 169
Cronache di laboratorio/Monitoraggio ambientale: Caccia ai pollini allergenici 167
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 166
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 166
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 166
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 166
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 165
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 165
Totale 21.310
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Categoria #
all - tutte 175.150
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 175.150
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.150 0 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20257.153 57 179 812 224 332 88 282 431 2.476 802 1.000 470
2025/202618.169 673 972 1.142 1.129 707 778 2.844 6.877 985 994 884 184
2026/20271.381 903 478 0 0 0 0 0 0 0 0 0 0
Totale 41.703