IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
NA - Nord America 9.189
EU - Europa 7.980
AS - Asia 3.648
SA - Sud America 726
Continente sconosciuto - Info sul continente non disponibili 64
AF - Africa 58
OC - Oceania 6
Totale 21.671
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Nazione #
US - Stati Uniti d'America 9.048
RU - Federazione Russa 2.219
UA - Ucraina 1.604
SG - Singapore 1.198
DE - Germania 1.127
SE - Svezia 917
HK - Hong Kong 853
BR - Brasile 677
CN - Cina 609
FI - Finlandia 581
IN - India 417
GB - Regno Unito 314
IT - Italia 302
IE - Irlanda 295
VN - Vietnam 250
NL - Olanda 245
FR - Francia 119
CA - Canada 93
BE - Belgio 79
IR - Iran 67
EU - Europa 64
JP - Giappone 50
CZ - Repubblica Ceca 37
EE - Estonia 37
IL - Israele 35
KR - Corea 34
MX - Messico 28
AT - Austria 26
LT - Lituania 21
TW - Taiwan 20
IQ - Iraq 18
BD - Bangladesh 17
MA - Marocco 17
TR - Turchia 17
AR - Argentina 16
ZA - Sudafrica 16
ES - Italia 15
PL - Polonia 11
EC - Ecuador 10
CH - Svizzera 9
PK - Pakistan 9
AE - Emirati Arabi Uniti 7
KE - Kenya 7
PY - Paraguay 7
TN - Tunisia 7
BZ - Belize 6
UY - Uruguay 6
AM - Armenia 5
AZ - Azerbaigian 5
CO - Colombia 5
JO - Giordania 4
MY - Malesia 4
PA - Panama 4
PH - Filippine 4
PT - Portogallo 4
SK - Slovacchia (Repubblica Slovacca) 4
SN - Senegal 4
AL - Albania 3
AU - Australia 3
HU - Ungheria 3
KW - Kuwait 3
KZ - Kazakistan 3
NZ - Nuova Zelanda 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
HN - Honduras 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
SV - El Salvador 2
BB - Barbados 1
BG - Bulgaria 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CL - Cile 1
EG - Egitto 1
GE - Georgia 1
GT - Guatemala 1
JM - Giamaica 1
LB - Libano 1
LK - Sri Lanka 1
MD - Moldavia 1
OM - Oman 1
PE - Perù 1
PS - Palestinian Territory 1
RS - Serbia 1
TG - Togo 1
TH - Thailandia 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
VE - Venezuela 1
Totale 21.671
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Città #
Chandler 1.755
Jacksonville 1.754
Hong Kong 850
Singapore 721
Moscow 562
Wilmington 498
Ashburn 399
Boardman 380
Helsinki 299
Dublin 294
Hefei 264
The Dalles 263
Ann Arbor 259
Dong Ket 249
Kronberg 240
Dearborn 231
Woodbridge 173
Santa Clara 133
Beijing 122
Seattle 119
Trento 97
Brooklyn 91
Shanghai 83
Pune 81
Phoenix 79
Brussels 77
Munich 77
Los Angeles 73
New York 72
Houston 62
Southend 57
Falls Church 54
Toronto 54
Augusta 52
San Mateo 50
São Paulo 49
Turku 40
Redwood City 38
Mountain View 36
Secaucus 36
Falkenstein 33
Brno 30
Rio de Janeiro 28
Miami 24
Norwalk 24
Tokyo 24
Belo Horizonte 23
Rome 23
Vienna 23
Guangzhou 22
London 22
Frankfurt am Main 21
Hanover 21
Leawood 21
Cheyenne 20
Buffalo 19
Ardabil 18
Zanjan 17
Mexico City 16
Ottawa 16
Overland Park 16
Saint Petersburg 16
Campinas 14
San Francisco 14
Tappahannock 14
Auburn Hills 13
Bologna 13
Taipei 13
St Petersburg 12
Atlanta 11
Milan 11
Portland 11
Brasília 10
Nanjing 10
Porto Alegre 10
Sunnyvale 10
Bolzano 9
Boston 9
Council Bluffs 9
Curitiba 9
Salvador 9
Baghdad 8
Guarulhos 8
Montreal 8
Stockholm 8
Amsterdam 7
Charlotte 7
Cologne 7
Goiânia 7
Asunción 6
Chennai 6
Costa Mesa 6
Elk Grove Village 6
Groot-ammers 6
Kunming 6
Mumbai 6
Nairobi 6
Owings Mills 6
Recife 6
Redmond 6
Totale 11.637
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 827
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 309
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 174
Dynamic SIMS Characterization of Ge1-xSnx alloy 145
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 141
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 139
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 135
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 134
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 134
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 131
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 129
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 127
Analytical methodology development for Silicon rich oxide chemical physical characterization 126
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 124
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 121
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 121
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 121
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 117
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 117
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 116
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 114
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 113
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 113
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 113
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 112
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 112
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 112
Highly sensitive detection of inorganic contamination 112
Real-time observation and optimization of tungsten ALD process cycle 111
Analytical methodology development for SRO chemical physical characterization 111
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 110
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 110
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 109
Arsenic uphill diffusion during shallow junction formation 108
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 108
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 107
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 107
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 107
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 107
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 107
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 106
ispettiva di sorveglianza 04-05 Luglio 2013 106
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 106
Diffusion and electrical activation of indium in silicon 105
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 105
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 105
Hydrogen diffusion in GaAs1−xNx 104
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 104
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 104
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 104
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 103
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 103
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 103
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 101
Vacancy-engineering implants for high boron activation in silicon on insulator 101
Investigation on indium diffusion in silicon 100
Characterization of Junction Activation and Deactivation Using non-Equilibrium 100
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 99
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 99
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 99
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 99
Highly Sensitive Detection of Inorganic Contamination 98
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 97
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 97
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 97
Boron pile-up phenomena during ultra shallow junction formation 96
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 96
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 96
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 96
ispettiva di sorveglianza 6-7 giugno 2012. 96
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 95
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 94
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 94
Influence of Co-implantation on the activation and diffusion of ultra-shallow extension implants 94
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 94
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 93
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 93
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 93
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 93
Activated dopant effect on low energy SIMS depth profiling 93
Morphology structure and interfaces in the preparation of films by SUMBE for gas sensing 93
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 91
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 91
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 91
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 91
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 91
Pollen discrimination and classification by Fourier transform infrared (FT-IR) microspectroscopy and machine learning 90
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 90
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 90
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 90
Cronache di laboratorio/Monitoraggio ambientale: Caccia ai pollini allergenici 90
Boron ultra low energy SIMS depth profiling improved by rotating stage 90
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 89
Dynamic SIMS Characterization of Ge1-xSnx alloy 89
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 89
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 88
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 88
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 88
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 88
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 88
Totale 11.447
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Categoria #
all - tutte 122.307
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 122.307
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020176 0 0 0 0 0 0 0 0 0 0 0 176
2020/20213.414 1.043 16 255 181 260 104 319 24 23 607 170 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20256.820 57 179 812 224 332 88 282 431 2.476 802 1.000 137
Totale 21.820