IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 18.746
EU - Europa 16.029
AS - Asia 7.972
SA - Sud America 1.753
Continente sconosciuto - Info sul continente non disponibili 240
AF - Africa 193
OC - Oceania 9
Totale 44.942
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 18.192
RU - Federazione Russa 8.641
SG - Singapore 2.928
UA - Ucraina 1.634
DE - Germania 1.502
BR - Brasile 1.468
CN - Cina 1.341
HK - Hong Kong 1.224
VN - Vietnam 1.072
SE - Svezia 1.042
FI - Finlandia 640
IN - India 552
GB - Regno Unito 528
IT - Italia 512
FR - Francia 482
IE - Irlanda 302
CA - Canada 289
NL - Olanda 264
JP - Giappone 116
MX - Messico 112
AR - Argentina 100
BD - Bangladesh 98
BE - Belgio 82
PL - Polonia 80
IQ - Iraq 79
ES - Italia 69
IR - Iran 68
EU - Europa 64
TR - Turchia 60
ZA - Sudafrica 56
KR - Corea 47
AT - Austria 44
EC - Ecuador 43
IL - Israele 42
CZ - Repubblica Ceca 41
PK - Pakistan 41
LT - Lituania 40
EE - Estonia 38
SA - Arabia Saudita 38
MA - Marocco 32
AE - Emirati Arabi Uniti 31
PH - Filippine 31
VE - Venezuela 31
CO - Colombia 30
CR - Costa Rica 27
TW - Taiwan 25
JM - Giamaica 23
PY - Paraguay 22
GT - Guatemala 20
ID - Indonesia 20
JO - Giordania 20
UZ - Uzbekistan 20
CL - Cile 19
TN - Tunisia 19
HN - Honduras 17
KZ - Kazakistan 17
EG - Egitto 16
KE - Kenya 16
PE - Perù 15
UY - Uruguay 15
DZ - Algeria 14
TT - Trinidad e Tobago 14
MY - Malesia 13
SC - Seychelles 13
SV - El Salvador 13
CH - Svizzera 12
AZ - Azerbaigian 11
LB - Libano 11
PT - Portogallo 11
AL - Albania 10
NP - Nepal 10
DK - Danimarca 9
TH - Thailandia 9
DO - Repubblica Dominicana 8
NI - Nicaragua 8
SN - Senegal 8
AM - Armenia 7
PS - Palestinian Territory 7
AU - Australia 6
BO - Bolivia 6
BZ - Belize 6
ET - Etiopia 6
HU - Ungheria 6
PA - Panama 6
RS - Serbia 6
BA - Bosnia-Erzegovina 5
KG - Kirghizistan 5
KW - Kuwait 5
OM - Oman 5
RO - Romania 5
SK - Slovacchia (Repubblica Slovacca) 5
GP - Guadalupe 4
MD - Moldavia 4
BY - Bielorussia 3
GY - Guiana 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
MT - Malta 3
NG - Nigeria 3
NZ - Nuova Zelanda 3
Totale 44.726
Salva come PNG Salva come JPEG
Città #
San Jose 2.000
Jacksonville 1.765
Chandler 1.755
Council Bluffs 1.692
Singapore 1.670
Hong Kong 1.170
Ashburn 1.045
Moscow 565
Dallas 527
Wilmington 505
Boardman 424
Beijing 417
The Dalles 359
Helsinki 333
Los Angeles 308
Dublin 300
Ho Chi Minh City 279
Hefei 265
Ann Arbor 259
Dong Ket 249
Kronberg 240
New York 239
Santa Clara 234
Dearborn 233
Lauterbourg 210
Hanoi 188
Munich 188
Woodbridge 173
Phoenix 150
Brooklyn 142
Seattle 135
Trento 128
São Paulo 127
Houston 104
Shanghai 86
Buffalo 85
Pune 85
Frankfurt am Main 84
Toronto 78
Brussels 77
Atlanta 76
Tokyo 72
Montreal 64
Turku 63
Orem 62
Tampa 58
Southend 57
Warsaw 57
Chicago 56
Falls Church 54
Rome 54
Augusta 52
Rio de Janeiro 52
San Mateo 52
Boston 50
Garland 50
Secaucus 50
North Easton 49
Denver 48
Miami 47
Mexico City 43
Haiphong 42
Honolulu 42
London 42
Da Nang 41
North Bergen 41
Poplar 39
Redwood City 38
Mountain View 36
Chennai 35
Falkenstein 35
St Petersburg 35
Belo Horizonte 34
Lawrenceville 33
Brasília 32
Charlotte 31
Vienna 31
Brno 30
Johannesburg 30
Norwalk 30
Guangzhou 29
San Francisco 29
Milan 28
Philadelphia 27
Baghdad 26
Manchester 26
Mumbai 26
Stockholm 26
Tianjin 26
Porto Alegre 24
Queens 23
The Bronx 23
Curitiba 22
Ottawa 22
Columbus 21
Hanover 21
Leawood 21
Portland 21
Ankara 20
Cheyenne 20
Totale 21.197
Salva come PNG Salva come JPEG
Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 945
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 407
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 302
Analytical methodology development for Silicon rich oxide chemical physical characterization 288
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 283
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 283
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 281
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 280
Arsenic uphill diffusion during shallow junction formation 276
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 275
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 273
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 265
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 254
Dynamic SIMS Characterization of Ge1-xSnx alloy 250
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 248
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 247
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 245
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 242
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 241
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 240
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 240
Activated dopant effect on low energy SIMS depth profiling 239
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 239
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 238
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 238
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 237
Analytical methodology development for SRO chemical physical characterization 237
Boron pile-up phenomena during ultra shallow junction formation 236
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 236
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 233
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 233
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 232
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 232
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 231
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 231
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 230
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 229
Nanotensile tests, microscopy characterization and atomistic simulations of carbon nanotubes fibers 229
An experimental/ab-initio study on carbon nanotubes fibers for application in high-performing sporting goods. 228
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 227
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 226
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 225
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 221
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 220
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 219
Highly sensitive detection of inorganic contamination 218
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 216
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 216
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 216
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 215
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 215
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 214
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 214
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 214
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 213
Boron ultra low energy SIMS depth profiling improved by rotating stage 213
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 206
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 206
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 205
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 205
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 204
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 204
Vacancy-engineering implants for high boron activation in silicon on insulator 203
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 203
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 203
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 202
Highly Sensitive Detection of Inorganic Contamination 199
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS 197
ispettiva di sorveglianza 04-05 Luglio 2013 197
Real-time observation and optimization of tungsten ALD process cycle 195
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 195
Past, current and future of biodegradable plastics: innovative applications 193
Hydrogen diffusion in GaAs1−xNx 193
Morphology structure and interfaces in the preparation of films by SUMBE for gas sensing 193
Material Characterization of 4H-SiC - Influence of Protection Layer Thickness on Dopant Depth During Ion-Implantation 192
ispettiva di sorveglianza 6-7 giugno 2012. 192
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 191
Characterization of Junction Activation and Deactivation Using non-Equilibrium 190
Diffusion and electrical activation of indium in silicon 189
Complementary metrology within a European joint laboratory 188
Dynamic SIMS Characterization of Ge1-xSnx alloy 188
Point defect engineering study of phosphorus ion implanted germanium 188
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 188
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 187
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 187
Investigation on indium diffusion in silicon 186
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 185
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 185
A comparison between mass spectrometry techniques on oxynitrides 184
Ultra shallow junction analysis for technology nodes beyond 65nm 184
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 183
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 183
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 182
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 182
Al-Sn thin film deposited by pulsed laser ablation 179
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 179
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 178
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 178
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 176
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 176
Totale 22.678
Salva come PNG Salva come JPEG
Categoria #
all - tutte 186.678
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 186.678
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.119 0 0 0 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.356 260 108 278 115 179 264 122 286 67 365 30 282
2024/20257.153 57 179 812 224 332 88 282 431 2.476 802 1.000 470
2025/202618.169 673 972 1.142 1.129 707 778 2.844 6.877 985 994 884 184
2026/20274.620 903 759 1.445 1.513 0 0 0 0 0 0 0 0
Totale 44.942