IRIS Institutional Research Information System

Bersani, Massimo
 Distribuzione geografica
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Continente #
NA - Nord America 7.811
EU - Europa 5.132
AS - Asia 1.488
Continente sconosciuto - Info sul continente non disponibili 64
AF - Africa 5
OC - Oceania 5
SA - Sud America 5
Totale 14.510
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Nazione #
US - Stati Uniti d'America 7.752
UA - Ucraina 1.598
DE - Germania 999
SE - Svezia 908
FI - Finlandia 493
IN - India 398
HK - Hong Kong 339
IE - Irlanda 291
GB - Regno Unito 272
CN - Cina 268
VN - Vietnam 249
IT - Italia 241
FR - Francia 113
RU - Federazione Russa 92
IR - Iran 66
EU - Europa 64
BE - Belgio 58
CA - Canada 45
SG - Singapore 41
IL - Israele 33
JP - Giappone 33
KR - Corea 32
AT - Austria 20
NL - Olanda 17
TW - Taiwan 16
MX - Messico 14
CH - Svizzera 9
PL - Polonia 7
ES - Italia 6
TR - Turchia 6
BR - Brasile 4
MY - Malesia 4
AU - Australia 3
PT - Portogallo 3
NZ - Nuova Zelanda 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
ZA - Sudafrica 2
AR - Argentina 1
CZ - Repubblica Ceca 1
LT - Lituania 1
MA - Marocco 1
MD - Moldavia 1
OM - Oman 1
PH - Filippine 1
SA - Arabia Saudita 1
Totale 14.510
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Città #
Chandler 1.755
Jacksonville 1.754
Wilmington 498
Ashburn 364
Hong Kong 336
Dublin 291
Ann Arbor 259
Boardman 255
Helsinki 253
Dong Ket 249
Kronberg 240
Dearborn 231
Woodbridge 173
Seattle 115
Beijing 95
Pune 81
Trento 81
Shanghai 78
Brooklyn 77
Phoenix 76
Houston 62
Brussels 58
New York 57
Southend 57
Falls Church 54
Augusta 52
San Mateo 50
Singapore 41
Toronto 40
Redwood City 38
Mountain View 36
Secaucus 32
Norwalk 24
Guangzhou 21
Hanover 21
Leawood 21
Cheyenne 20
Vienna 20
Ardabil 18
Los Angeles 17
Rome 17
Zanjan 17
Overland Park 16
Saint Petersburg 16
Tappahannock 14
Auburn Hills 13
Bologna 13
Hefei 13
Taipei 13
Falkenstein 12
Mexico City 12
St Petersburg 12
Munich 11
Portland 11
Nanjing 10
Santa Clara 10
Sunnyvale 10
Bolzano 9
Frankfurt am Main 9
Tokyo 8
Cologne 7
Milan 7
Costa Mesa 6
Groot-ammers 6
Kunming 6
Owings Mills 6
Redmond 6
Venezia 6
Gloucester 5
Hamburg 5
Lana 5
Buffalo 4
Des Moines 4
Gif-sur-yvette 4
Gunzenhausen 4
Malakoff 4
North Bergen 4
Padova 4
Paris 4
Sacramento 4
San Jose 4
Wuhan 4
Andover 3
Atlanta 3
Baselga di Pinè 3
Chengdu 3
Elk Grove Village 3
Fuzhou 3
Gazi 3
Grado 3
Henderson 3
Kepala Batas 3
Kumar 3
Lausanne 3
London 3
Madrid 3
Mitsui 3
Port Saint Lucie 3
Saint-Etienne 3
Suzhou 3
Totale 8.409
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 799
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 132
Dynamic SIMS Characterization of Ge1-xSnx alloy 108
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 104
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 96
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 95
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 92
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 91
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 87
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 87
Real-time observation and optimization of tungsten ALD process cycle 84
Analytical methodology development for Silicon rich oxide chemical physical characterization 82
Caratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri 82
Thin Film Transformations and Volatile Products in the Formation of Nanoporous Low-K PMSSQ-based Dielectric 80
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 79
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 79
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 78
Vacancy-engineering implants for high boron activation in silicon on insulator 78
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 77
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 76
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 76
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 75
Influence of Co-implantation on the activation and diffusion of ultra-shallow extension implants 75
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 75
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 74
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 74
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 73
Surface Analysis Studies of Bidri Archaeomaterials from the Collection of the British Museum 72
Hydrogen diffusion in GaAs1−xNx 72
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 72
Analytical methodology development for SRO chemical physical characterization 72
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 72
Highly sensitive detection of inorganic contamination 72
Investigation on indium diffusion in silicon 71
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 71
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 70
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 70
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 70
Characterization of Junction Activation and Deactivation Using non-Equilibrium 70
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 70
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 70
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 70
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 69
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 69
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 69
Arsenic uphill diffusion during shallow junction formation 68
Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO2/Si Interface 68
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 68
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 68
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 68
Fabrication by rf-sputtering processing of Er3+ / Yb3+ codoped silica-titania planar waveguides 68
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses 67
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 67
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 67
Valutazione dell’influenza dei ceppi di lievito sul profilo aromatico del Vin Santo di Gambellara mediante PTR-MS e analisi statistica multivariata 67
On the photoresist stripping and damage of ultralow k dielectric materials using remote H2- and D2-based discharges 66
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 66
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 66
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 66
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 66
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 66
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 66
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 65
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 65
ToF-SIMS and XPS charcterisation of urban aerosols for pollution studies 65
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 65
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 65
Diffusion and electrical activation of indium in silicon 65
Highly Sensitive Detection of Inorganic Contamination 65
Structural analyses of thermal annealed SRO/SiO2 superlattices 64
State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies 64
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 64
Complementary metrology within a European joint laboratory 63
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 63
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 63
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 63
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 63
Ultra shallow junction analysis for technology nodes beyond 65nm 63
Uphill diffusion of ultra-low energy boron implants in preamorphised silicon and SOI 62
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 62
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 62
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 62
The issue of pseudoreplication when applying a statistical exploratory approach to extract relevant features from ToF-SIMS spectra 62
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 62
ULSI Technology and Materials: Quantitative Answers by Combined Mass Spectrometry Surface Techniques 62
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 62
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 62
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 62
Pollen discrimination and classification by Fourier transform infrared (FT-IR) microspectroscopy and machine learning 61
Effect of hydrogen incorporation temperature in in plane -engineered GaAsN/GaAsN:H heterostructures 61
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 61
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDS 61
Boron pile-up phenomena during ultra shallow junction formation 60
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 60
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 60
Activated dopant effect on low energy SIMS depth profiling 60
Dynamic SIMS Characterization of Ge1-xSnx alloy 60
Sub-keV Mass Spectrometry Analyses on Oxynitrided Ultrathin Films 59
ToF-SIMS studies of nanoporous PMSSQ materials: Kinetics and reactions in the processing of low-K dielectrics for ULSI applications 59
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 59
Totale 7.783
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Categoria #
all - tutte 74.483
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.483
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201971 0 0 0 0 0 0 0 0 0 10 49 12
2019/20202.558 256 252 27 12 312 165 321 27 286 438 286 176
2020/20213.414 1.043 16 255 181 260 104 319 24 23 607 170 412
2021/20221.217 67 24 7 170 67 45 40 224 95 95 122 261
2022/20233.480 81 208 65 620 259 600 16 255 863 298 153 62
2023/20242.004 260 108 278 115 179 264 122 286 67 325 0 0
Totale 14.648