The progressive shrinking of microelectronic devices has determined an increasing interest in silicides for contacts and interconnections manufactoring. In particular TiSi2 has shown the most interesting technological features, such as low resistivity, comparable with Al one, a good thermal stability, and the availability of self-aligning processes. The analytical characterization of these materials plays a relevant role in developing and setting up the process necessary for the integration of the related technology in devices manufactoring. We develope an analytical pethodology in order to obtain accurate and reliable dopant depth profiles in TiSi2/Si systems by SIMS analysis. We apply our methodology both to suitable standard samples and to some real device made in an industrial production process
Dopant Redistribution Analysis in RiSi2/Si Systems by SIMS
Bersani, Massimo;Fedrizzi, Michele;Anderle, Mariano
1998-01-01
Abstract
The progressive shrinking of microelectronic devices has determined an increasing interest in silicides for contacts and interconnections manufactoring. In particular TiSi2 has shown the most interesting technological features, such as low resistivity, comparable with Al one, a good thermal stability, and the availability of self-aligning processes. The analytical characterization of these materials plays a relevant role in developing and setting up the process necessary for the integration of the related technology in devices manufactoring. We develope an analytical pethodology in order to obtain accurate and reliable dopant depth profiles in TiSi2/Si systems by SIMS analysis. We apply our methodology both to suitable standard samples and to some real device made in an industrial production processI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
