Grazing Incidence X-Ray Fluorescence (GIXRF) analysis in the soft X-ray range provides excellent conditions for exciting B-K and As-Liii,ii shells. The X-ray Standing Wave field (XSW) associated with GIXRF on flat samples is used as a tunable sensor to gain information about the implantation profile in the nm range due to the in-depth changes of the XSW intensity dependent on the angle between the sample surface and the primary beam. This technique is very sensitive to near surface layers. It is therefore well suited for the study of ultra shallow dopant distributions. Arsenic implanted (100) Si wafers with nominal fluence between 1.0E14 cm−2 and 5.0E15 cm−2 and implantation energies between 0.5 keV and 5.0 keV and Boron implanted (100) Si wafers with nominal fluence of 1.0E14 cm−2 and 5.0E15 cm−2 and implantation energies between 0.2 keV and 3.0 keV have been used to compare SIMS analysis with synchrotron radiation induced GIXRF analysis in the soft X-ray range. The measurements have been carried out at the laboratory of the Physikalisch-Technische Bundesanstalt at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. Here the use of an absolutely calibrated energy-dispersive detector for the registration of the B-K and As-L fluorescence radiation allows for the absolute determination of the total retained dose. An estimate of the concentration profile has been obtained by fitting the X-ray fluorescence angular scans with profiles derived by simulation of the implantation process. A good match among the total retained dose measured with the different techniques has been observed.
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions
Giubertoni, Damiano;Pepponi, Giancarlo;Bersani, Massimo
2009-01-01
Abstract
Grazing Incidence X-Ray Fluorescence (GIXRF) analysis in the soft X-ray range provides excellent conditions for exciting B-K and As-Liii,ii shells. The X-ray Standing Wave field (XSW) associated with GIXRF on flat samples is used as a tunable sensor to gain information about the implantation profile in the nm range due to the in-depth changes of the XSW intensity dependent on the angle between the sample surface and the primary beam. This technique is very sensitive to near surface layers. It is therefore well suited for the study of ultra shallow dopant distributions. Arsenic implanted (100) Si wafers with nominal fluence between 1.0E14 cm−2 and 5.0E15 cm−2 and implantation energies between 0.5 keV and 5.0 keV and Boron implanted (100) Si wafers with nominal fluence of 1.0E14 cm−2 and 5.0E15 cm−2 and implantation energies between 0.2 keV and 3.0 keV have been used to compare SIMS analysis with synchrotron radiation induced GIXRF analysis in the soft X-ray range. The measurements have been carried out at the laboratory of the Physikalisch-Technische Bundesanstalt at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. Here the use of an absolutely calibrated energy-dispersive detector for the registration of the B-K and As-L fluorescence radiation allows for the absolute determination of the total retained dose. An estimate of the concentration profile has been obtained by fitting the X-ray fluorescence angular scans with profiles derived by simulation of the implantation process. A good match among the total retained dose measured with the different techniques has been observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
