Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150 °C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150 °C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans
Giubertoni, Damiano;Gennaro, Salvatore;Bersani, Massimo;
2006-01-01
Abstract
Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150 °C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150 °C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
