Ultra-shallow B and BF2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000ºC were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1x1015 B cm-2 at an effective energy of 500eV. The presence of F from the BF2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.

Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing

Giubertoni, Damiano;Gennaro, Salvatore;Bersani, Massimo;
2006-01-01

Abstract

Ultra-shallow B and BF2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000ºC were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1x1015 B cm-2 at an effective energy of 500eV. The presence of F from the BF2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3727
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