Ultra-shallow B and BF2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000ºC were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1x1015 B cm-2 at an effective energy of 500eV. The presence of F from the BF2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing
Giubertoni, Damiano;Gennaro, Salvatore;Bersani, Massimo;
2006-01-01
Abstract
Ultra-shallow B and BF2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000ºC were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1x1015 B cm-2 at an effective energy of 500eV. The presence of F from the BF2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
