The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly-conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional pre-amorphization and solid-phase epitaxial regrowth. An optimized 160-keV silicon implant in a 55/145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ~ 5x1020cm-3.

Vacancy-engineering implants for high boron activation in silicon on insulator

Gennaro, Salvatore;Giubertoni, Damiano;Bersani, Massimo;Barozzi, Mario
2006

Abstract

The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly-conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional pre-amorphization and solid-phase epitaxial regrowth. An optimized 160-keV silicon implant in a 55/145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ~ 5x1020cm-3.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/4259
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact