CINECA IRIS Institutional Research Information System
IRIS è l’archivio della produzione scientifica della Fondazione Bruno Kessler.
EnglishThe formation of boron interstitial clusters is a key limiting factor for the fabrication of highly-conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional pre-amorphization and solid-phase epitaxial regrowth. An optimized 160-keV silicon implant in a 55/145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ~ 5x1020cm-3.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte di FBK.
| Titolo: | Vacancy-engineering implants for high boron activation in silicon on insulator |
| Autori: | |
| Data di pubblicazione: | 2006 |
| Rivista: | |
| Abstract: | The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly-conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional pre-amorphization and solid-phase epitaxial regrowth. An optimized 160-keV silicon implant in a 55/145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ~ 5x1020cm-3. |
| Handle: | http://hdl.handle.net/11582/4259 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11582/4259
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
Copyright © 2021