The RSFs depend on each SIMS instrument and are affected by the particular analytical conditions used to collect the data. In particular some artifacts occur by sputtering silicon with 1keV O2+ at 63° incidence. The surface topography evolves These artifacts have a big impact on the RFSs for any analyte elements in silicon because of a systematic count rates increase of all reference isotope matrix signals. 25 RSFs are here obtained on ion implanted reference materials following the ISO standard 18114:2003, with and without the Zalar rotation installed on the Cameca SC-ultra. These data are eventually compared with the corresponding RSFs published in the 80-90’s obtained by ims3f and 4f instruments.

SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation.

Barozzi, Mario;Giubertoni, Damiano;Iacob, Erica;Bersani, Massimo
2013

Abstract

The RSFs depend on each SIMS instrument and are affected by the particular analytical conditions used to collect the data. In particular some artifacts occur by sputtering silicon with 1keV O2+ at 63° incidence. The surface topography evolves These artifacts have a big impact on the RFSs for any analyte elements in silicon because of a systematic count rates increase of all reference isotope matrix signals. 25 RSFs are here obtained on ion implanted reference materials following the ISO standard 18114:2003, with and without the Zalar rotation installed on the Cameca SC-ultra. These data are eventually compared with the corresponding RSFs published in the 80-90’s obtained by ims3f and 4f instruments.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/205215
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