Aim of this work is the characterization of oxynitride films grown by Rapid Thermal Processing (RTP) using nitrous oxide and nitric oxide precursors. The thickness of the oxynitrided layers is about 7nm. Secondary Ions Mass Spectrometry (SIMS) and X-rays Photoemission Spectroscopy (XPS) have been employed to obtain a complete chemical characterization. XPS analyses have been performed at different depths after removal of oxynitride layers by chemica etching. SIMS and XPS analyses have been also performed on the same samples after a reoxidation treatment. Depending on the precursors used, the oxynitrides show different characteristics
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses
Bersani, Massimo;Vanzetti, Lia Emanuela;Anderle, Mariano
1998-01-01
Abstract
Aim of this work is the characterization of oxynitride films grown by Rapid Thermal Processing (RTP) using nitrous oxide and nitric oxide precursors. The thickness of the oxynitrided layers is about 7nm. Secondary Ions Mass Spectrometry (SIMS) and X-rays Photoemission Spectroscopy (XPS) have been employed to obtain a complete chemical characterization. XPS analyses have been performed at different depths after removal of oxynitride layers by chemica etching. SIMS and XPS analyses have been also performed on the same samples after a reoxidation treatment. Depending on the precursors used, the oxynitrides show different characteristicsFile in questo prodotto:
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