In the present work the effect induced by a thin silicon oxide and its interface with silicon on the quantification of arsenic ultra shallow distribution measured by Secondary Ion Mass Spectrometry (SIMS) has been studied. Three As implants on a 11nm SiO2/ Si stack have been measured: the As projected ranges were in oxide, at SiO2/ Si interface and just beyond the interface respectively. The measurements have been performed by different analytical methodologies using Cs+ ions as primary beam and collecting the molecular species SiAs- and varying impact energy. Different ways of normalization have been studied and the effect of oxide on RSF variation and dose measurement has been discussed

Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack

Barozzi, Mario;Giubertoni, Damiano;Anderle, Mariano;Bersani, Massimo
2004-01-01

Abstract

In the present work the effect induced by a thin silicon oxide and its interface with silicon on the quantification of arsenic ultra shallow distribution measured by Secondary Ion Mass Spectrometry (SIMS) has been studied. Three As implants on a 11nm SiO2/ Si stack have been measured: the As projected ranges were in oxide, at SiO2/ Si interface and just beyond the interface respectively. The measurements have been performed by different analytical methodologies using Cs+ ions as primary beam and collecting the molecular species SiAs- and varying impact energy. Different ways of normalization have been studied and the effect of oxide on RSF variation and dose measurement has been discussed
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/2148
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