In the present work the effect induced by a thin silicon oxide and its interface with silicon on the quantification of arsenic ultra shallow distribution measured by Secondary Ion Mass Spectrometry (SIMS) has been studied. Three As implants on a 11nm SiO2/ Si stack have been measured: the As projected ranges were in oxide, at SiO2/ Si interface and just beyond the interface respectively. The measurements have been performed by different analytical methodologies using Cs+ ions as primary beam and collecting the molecular species SiAs- and varying impact energy. Different ways of normalization have been studied and the effect of oxide on RSF variation and dose measurement has been discussed
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack
Barozzi, Mario;Giubertoni, Damiano;Anderle, Mariano;Bersani, Massimo
2004-01-01
Abstract
In the present work the effect induced by a thin silicon oxide and its interface with silicon on the quantification of arsenic ultra shallow distribution measured by Secondary Ion Mass Spectrometry (SIMS) has been studied. Three As implants on a 11nm SiO2/ Si stack have been measured: the As projected ranges were in oxide, at SiO2/ Si interface and just beyond the interface respectively. The measurements have been performed by different analytical methodologies using Cs+ ions as primary beam and collecting the molecular species SiAs- and varying impact energy. Different ways of normalization have been studied and the effect of oxide on RSF variation and dose measurement has been discussedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
