To realise gate dielectrics in the present ULSI technology ultra thin oxynitrides are used. Nitrogen quantitative depth profiles are mandatory to characterise this material. Depth resolution is the key analytical parameter to obtain useful ultra thin oxides characterisation. To improve this resolution very low primary ion impact energy is required. In the present paper, we compare quantitative depth profiles carried out by dynamic-SIMS and ToF-SIMS, respectively. Dynamic-SIMS analyses have been performed using a Cameca 4-f and the new Cameca Sc-Ultra 300 instrument. Different impact energies and incidence angles were used in combination with MCs+ ion monitoring. The D-SIMS profiles at keV and sub keV primary beam impact energies, are discussed and compared with ToF-SIMS data obtained using a IONTOF IV instrument.

D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides

Bersani, Massimo;Giubertoni, Damiano;Barozzi, Mario;Iacob, Erica;Vanzetti, Lia Emanuela;Anderle, Mariano;Lazzeri, Paolo;
2003

Abstract

To realise gate dielectrics in the present ULSI technology ultra thin oxynitrides are used. Nitrogen quantitative depth profiles are mandatory to characterise this material. Depth resolution is the key analytical parameter to obtain useful ultra thin oxides characterisation. To improve this resolution very low primary ion impact energy is required. In the present paper, we compare quantitative depth profiles carried out by dynamic-SIMS and ToF-SIMS, respectively. Dynamic-SIMS analyses have been performed using a Cameca 4-f and the new Cameca Sc-Ultra 300 instrument. Different impact energies and incidence angles were used in combination with MCs+ ion monitoring. The D-SIMS profiles at keV and sub keV primary beam impact energies, are discussed and compared with ToF-SIMS data obtained using a IONTOF IV instrument.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/771
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