Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium.

Giubertoni, Damiano; Pepponi, Giancarlo; Beckhoff, B.; Hoenicke, P.; Gennaro, Salvatore; Meirer, Florian; Ingerle, D.; Steinhauser, G.; Fried, M.; Petrik, P.; Parisini, A.; Reading, M. A.; Streli, C.; van den Berg, J. A.; Bersani, Massimo

In this work a summary of complementary approaches to quantitatively characterize ultra shallow dopant distributions in Si, developed within an European multi- laboratories consortium (ANNA), is reported. Results obtained with several techniques on arsenic and boron ultra low energy (0.5-5 keV for As and 0.2-3 keV for B) implants in Si are described. The employed techniques were SIMS, GIXRF (with either conventional or synchrotron radiation excitation), NAA, MEIS, Z-contrast ADF-STEM and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behaviour enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.

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Titolo:	Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium.
Autori:	Giubertoni, Damiano Pepponi, Giancarlo B. Beckhoff P. Hoenicke Gennaro, Salvatore Meirer, Florian D. Ingerle G. Steinhauser M. Fried P. Petrik A. Parisini M. A. Reading C. Streli J. A. van den Berg Bersani, Massimo mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2009
Abstract:	In this work a summary of complementary approaches to quantitatively characterize ultra shallow dopant distributions in Si, developed within an European multi- laboratories consortium (ANNA), is reported. Results obtained with several techniques on arsenic and boron ultra low energy (0.5-5 keV for As and 0.2-3 keV for B) implants in Si are described. The employed techniques were SIMS, GIXRF (with either conventional or synchrotron radiation excitation), NAA, MEIS, Z-contrast ADF-STEM and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behaviour enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.
Handle:	http://hdl.handle.net/11582/20169
Appare nelle tipologie:	5.12 Altro

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