In this work a summary of complementary approaches to quantitatively characterize ultra shallow dopant distributions in Si, developed within an European multi- laboratories consortium (ANNA), is reported. Results obtained with several techniques on arsenic and boron ultra low energy (0.5-5 keV for As and 0.2-3 keV for B) implants in Si are described. The employed techniques were SIMS, GIXRF (with either conventional or synchrotron radiation excitation), NAA, MEIS, Z-contrast ADF-STEM and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behaviour enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.
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Titolo: | Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. |
Autori: | |
Data di pubblicazione: | 2009 |
Abstract: | In this work a summary of complementary approaches to quantitatively characterize ultra shallow dopant distributions in Si, developed within an European multi- laboratories consortium (ANNA), is reported. Results obtained with several techniques on arsenic and boron ultra low energy (0.5-5 keV for As and 0.2-3 keV for B) implants in Si are described. The employed techniques were SIMS, GIXRF (with either conventional or synchrotron radiation excitation), NAA, MEIS, Z-contrast ADF-STEM and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behaviour enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques. |
Handle: | http://hdl.handle.net/11582/20169 |
Appare nelle tipologie: | 5.12 Altro |