Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. In this work, we investigate how the formation and dissociation of such complexes rule the diffusion of deuterium in GaAs1−xNx. The concentration depth profile of deuterium is determined by secondary ion mass spectrometry under a wide range of experimental conditions that comprise different N concentrations (x=0.09%, 0.40%, 0.70%, and 1.5%) and D irradiation temperatures (TD=200, 250, 300 and 350 °C). The experimental data are successfully reproduced by a diffusion model in the presence of strong D trapping. In particular, the deuterium diffusion and capture rate coefficients are determined, and a minimum decay length of the deuterium forefront is found at low TD (<250 °C) and high x (>0.7%). These parameters set the experimental conditions within which a nanostructuring of the physical properties of GaAs1−xNx is attainable.

Hydrogen diffusion in GaAs1−xNx

Giubertoni, Damiano;Bersani, Massimo;
2009

Abstract

Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. In this work, we investigate how the formation and dissociation of such complexes rule the diffusion of deuterium in GaAs1−xNx. The concentration depth profile of deuterium is determined by secondary ion mass spectrometry under a wide range of experimental conditions that comprise different N concentrations (x=0.09%, 0.40%, 0.70%, and 1.5%) and D irradiation temperatures (TD=200, 250, 300 and 350 °C). The experimental data are successfully reproduced by a diffusion model in the presence of strong D trapping. In particular, the deuterium diffusion and capture rate coefficients are determined, and a minimum decay length of the deuterium forefront is found at low TD (<250 °C) and high x (>0.7%). These parameters set the experimental conditions within which a nanostructuring of the physical properties of GaAs1−xNx is attainable.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/5329
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