IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 5.240
EU - Europa 3.834
AS - Asia 3.025
SA - Sud America 753
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 30
OC - Oceania 4
Totale 12.940
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Nazione #
US - Stati Uniti d'America 5.129
SG - Singapore 1.203
RU - Federazione Russa 1.181
BR - Brasile 660
HK - Hong Kong 596
DE - Germania 595
CN - Cina 533
UA - Ucraina 418
SE - Svezia 398
FI - Finlandia 278
IT - Italia 257
IN - India 256
VN - Vietnam 215
GB - Regno Unito 165
IE - Irlanda 159
NL - Olanda 137
FR - Francia 66
CA - Canada 65
PL - Polonia 44
AR - Argentina 40
MX - Messico 31
BD - Bangladesh 30
ES - Italia 30
EU - Europa 30
BE - Belgio 26
JP - Giappone 25
IQ - Iraq 24
IR - Iran 24
LT - Lituania 22
ZA - Sudafrica 22
AT - Austria 18
TR - Turchia 18
CZ - Repubblica Ceca 17
PK - Pakistan 15
CO - Colombia 13
SA - Arabia Saudita 13
IL - Israele 12
EC - Ecuador 11
MA - Marocco 10
KR - Corea 8
VE - Venezuela 8
CH - Svizzera 7
PE - Perù 7
ID - Indonesia 6
KE - Kenya 6
KZ - Kazakistan 6
NP - Nepal 5
PY - Paraguay 5
TW - Taiwan 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
JM - Giamaica 4
OM - Oman 4
TN - Tunisia 4
AU - Australia 3
BO - Bolivia 3
CL - Cile 3
EG - Egitto 3
LV - Lettonia 3
MT - Malta 3
PA - Panama 3
PS - Palestinian Territory 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
ET - Etiopia 2
LB - Libano 2
PH - Filippine 2
SN - Senegal 2
AL - Albania 1
AO - Angola 1
BG - Bulgaria 1
BW - Botswana 1
CI - Costa d'Avorio 1
EE - Estonia 1
GE - Georgia 1
GP - Guadalupe 1
GR - Grecia 1
GT - Guatemala 1
HU - Ungheria 1
KG - Kirghizistan 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MO - Macao, regione amministrativa speciale della Cina 1
NZ - Nuova Zelanda 1
RO - Romania 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 12.940
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Città #
Chandler 876
Jacksonville 807
Singapore 668
Hong Kong 596
Ashburn 344
Moscow 293
Dallas 224
Wilmington 213
Beijing 205
Boardman 197
Dublin 157
The Dalles 143
Dong Ket 140
Helsinki 139
Hefei 130
Kronberg 117
Trento 112
Dearborn 104
New York 102
Munich 88
Brooklyn 85
Ann Arbor 80
Los Angeles 78
Santa Clara 63
Woodbridge 62
São Paulo 61
Seattle 43
Houston 42
Phoenix 40
Turku 35
Pune 34
Shanghai 34
Warsaw 34
Rio de Janeiro 33
Brussels 26
Cheyenne 25
Falls Church 25
San Mateo 25
Atlanta 24
Ho Chi Minh City 24
Tokyo 23
Toronto 22
Orem 21
Montreal 20
Council Bluffs 19
Secaucus 19
Augusta 18
Denver 18
London 18
Falkenstein 17
Poplar 17
Belo Horizonte 16
Mexico City 16
Overland Park 16
Boston 15
Guangzhou 15
Miami 15
Stockholm 15
Chennai 14
Norwalk 14
San Francisco 14
St Petersburg 14
Frankfurt am Main 13
Hanoi 13
Leawood 13
Mountain View 13
Redwood City 13
Brno 12
Milan 12
Porto Alegre 12
Ardabil 11
Chicago 11
Johannesburg 11
Salvador 11
Brasília 10
Hanover 10
Mumbai 10
Verona 10
Auburn Hills 9
Curitiba 9
Gif-sur-yvette 9
Groningen 9
Haiphong 9
Rome 9
Saint Petersburg 9
Amsterdam 8
Assago 8
Baghdad 8
Ottawa 8
Vienna 8
Charlotte 7
Hillsboro 7
Portland 7
Tianjin 7
Campinas 6
Contagem 6
Istanbul 6
Manchester 6
Nairobi 6
Nanjing 6
Totale 7.256
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Nome #
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 330
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 188
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 187
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 187
Analytical methodology development for Silicon rich oxide chemical physical characterization 183
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 179
Arsenic uphill diffusion during shallow junction formation 174
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 162
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 158
Analytical methodology development for SRO chemical physical characterization 155
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 149
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 146
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 143
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 143
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 140
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 139
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 138
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 137
Activated dopant effect on low energy SIMS depth profiling 137
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 134
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 133
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 132
Boron ultra low energy SIMS depth profiling improved by rotating stage 129
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 128
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 127
Real-time observation and optimization of tungsten ALD process cycle 124
ispettiva di sorveglianza 04-05 Luglio 2013 124
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 124
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 124
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 123
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 122
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 121
Diffusion and electrical activation of indium in silicon 119
Vacancy-engineering implants for high boron activation in silicon on insulator 118
ispettiva di sorveglianza 6-7 giugno 2012. 115
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 113
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 113
A very low-energy apparatus for positron scattering on atoms and molecules 112
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 112
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 110
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 109
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 107
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 106
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 106
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 106
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 106
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 106
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 106
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 105
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 105
Low temperature oxidation of SiC preamorphized by ion implantation 105
Ultra shallow junction analysis for technology nodes beyond 65nm 105
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 104
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 103
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 103
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 102
Visita ispettiva annuale di sorveglianza Accredia 102
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 100
Structural analyses of thermal annealed SRO/SiO2 superlattices 100
Radiation resistant LGAD design 100
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 99
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 97
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 96
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 96
Suppression of boron interstitial clusters in SOI using vacancy engineering 94
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 94
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 93
Homogeneity study of traces in pine pollen with SR-μXRF 93
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 91
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 91
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 90
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 90
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 90
Surface plasmon resonance based on molecularly imprinted nanoparticles for the picomolar detection of the iron regulating hormone Hepcidin-25 90
Ultra thin oxynitride profiles by XPS etch-back analyses 89
Surface investigation of archeological glasses by secondary ion mass spectrometry 88
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 88
Induced roughness by low energy ion bombardment 88
Sample topography developed by sputtering in Cameca instruments 87
Sample holder implement for very small samples on SC-Ultra SIMS instrument 87
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 87
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 86
Diffusion and electrical activation of indium in silicon 86
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 86
Silicon defects characterization for low temperature ion implantation and RTA process 86
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 85
Shallow junction: stato dell'arte ed esigenze analitiche 84
SIMS analytical conditions optimized to reduce the morphology induced by sputtering with an oblique O2+ beam 84
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 84
Secondary ion mass spectrometry analysis applications on semiconductor materials 84
Strength and microstructure of friction stir welded additively manufactured Scalmalloy® in as-welded and heat-treated conditions 83
Topography developed by sputtering in a magnetic sector instruments: an AFM and SEM study’ 83
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 83
Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography 82
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 82
Visita ispettiva annuale di sorveglianza Accredia 82
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 82
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 82
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 81
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 81
Totale 11.322
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Categoria #
all - tutte 70.307
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 70.307
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021745 0 0 0 0 0 54 149 14 9 264 57 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.882 26 61 364 109 280 49 148 216 1.291 436 573 329
2025/20262.551 365 542 576 607 367 94 0 0 0 0 0 0
Totale 13.110