IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
EU - Europa 7.644
NA - Nord America 7.397
AS - Asia 4.264
SA - Sud America 844
AF - Africa 87
Continente sconosciuto - Info sul continente non disponibili 30
OC - Oceania 6
Totale 20.272
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Nazione #
US - Stati Uniti d'America 7.199
RU - Federazione Russa 4.524
SG - Singapore 1.538
CN - Cina 727
HK - Hong Kong 723
BR - Brasile 715
DE - Germania 709
VN - Vietnam 626
UA - Ucraina 424
SE - Svezia 423
IT - Italia 300
IN - India 290
FI - Finlandia 288
FR - Francia 243
GB - Regno Unito 197
IE - Irlanda 163
NL - Olanda 143
CA - Canada 107
PL - Polonia 56
AR - Argentina 55
MX - Messico 52
BD - Bangladesh 48
ES - Italia 45
IQ - Iraq 43
JP - Giappone 41
ZA - Sudafrica 32
EU - Europa 30
BE - Belgio 28
TR - Turchia 28
IR - Iran 24
LT - Lituania 23
AT - Austria 22
SA - Arabia Saudita 22
PK - Pakistan 21
CO - Colombia 18
CZ - Repubblica Ceca 17
EC - Ecuador 15
MA - Marocco 14
ID - Indonesia 13
IL - Israele 13
PH - Filippine 13
AE - Emirati Arabi Uniti 11
VE - Venezuela 11
JM - Giamaica 10
PE - Perù 10
TN - Tunisia 10
KR - Corea 9
CH - Svizzera 8
UZ - Uzbekistan 8
JO - Giordania 7
KZ - Kazakistan 7
PY - Paraguay 7
AZ - Azerbaigian 6
EG - Egitto 6
KE - Kenya 6
NP - Nepal 6
TW - Taiwan 6
AU - Australia 5
CL - Cile 5
PA - Panama 5
PS - Palestinian Territory 5
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
DO - Repubblica Dominicana 4
ET - Etiopia 4
HN - Honduras 4
LB - Libano 4
LV - Lettonia 4
MT - Malta 4
NG - Nigeria 4
OM - Oman 4
TT - Trinidad e Tobago 4
UY - Uruguay 4
BB - Barbados 3
DZ - Algeria 3
KG - Kirghizistan 3
RO - Romania 3
RS - Serbia 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TH - Thailandia 3
AM - Armenia 2
BG - Bulgaria 2
CR - Costa Rica 2
GE - Georgia 2
GR - Grecia 2
GT - Guatemala 2
HU - Ungheria 2
QA - Qatar 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
AL - Albania 1
AO - Angola 1
BS - Bahamas 1
BW - Botswana 1
CG - Congo 1
CI - Costa d'Avorio 1
DK - Danimarca 1
EE - Estonia 1
GP - Guadalupe 1
Totale 20.261
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Città #
San Jose 899
Chandler 876
Jacksonville 810
Singapore 737
Hong Kong 704
Ashburn 445
Council Bluffs 377
Moscow 294
Beijing 231
Dallas 230
Wilmington 214
Boardman 197
The Dalles 180
Dublin 160
Helsinki 149
Ho Chi Minh City 142
Dong Ket 140
Hefei 131
Hanoi 125
New York 122
Los Angeles 121
Kronberg 117
Trento 114
Lauterbourg 108
Dearborn 104
Brooklyn 97
Munich 88
Ann Arbor 80
Santa Clara 77
São Paulo 67
Woodbridge 63
Houston 56
Seattle 46
Phoenix 45
Warsaw 41
Frankfurt am Main 38
Atlanta 37
Orem 36
Pune 36
Rio de Janeiro 35
Shanghai 35
Turku 35
Haiphong 34
Tokyo 33
Toronto 29
Chicago 28
Montreal 28
Brussels 26
Cheyenne 25
Da Nang 25
Falls Church 25
London 25
San Mateo 25
Mexico City 24
Denver 23
Augusta 21
Miami 20
Poplar 20
Chennai 19
Guangzhou 19
Secaucus 19
Boston 18
Falkenstein 18
Baghdad 17
Belo Horizonte 17
Johannesburg 17
Philadelphia 17
Overland Park 16
Milan 15
Porto Alegre 15
Stockholm 15
Norwalk 14
Rome 14
San Francisco 14
St Petersburg 14
Leawood 13
Mountain View 13
Mumbai 13
Pergine Valsugana 13
Redwood City 13
Amsterdam 12
Brno 12
Salvador 12
Ardabil 11
Brasília 11
Istanbul 11
The Bronx 11
Tianjin 11
Washington 11
Hanover 10
Nanjing 10
Verona 10
Vienna 10
Auburn Hills 9
Buffalo 9
Charlotte 9
Curitiba 9
Gif-sur-yvette 9
Groningen 9
Hillsboro 9
Totale 9.598
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Nome #
On the asymmetry of soda lime silicate float glass structure and chemistry 446
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 392
Analytical methodology development for Silicon rich oxide chemical physical characterization 267
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 261
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 260
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 255
Arsenic uphill diffusion during shallow junction formation 250
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 250
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 239
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 233
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 230
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 226
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 220
Analytical methodology development for SRO chemical physical characterization 219
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 218
Activated dopant effect on low energy SIMS depth profiling 216
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 216
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 215
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 210
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 209
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 207
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 200
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 198
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 198
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 197
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 196
Boron ultra low energy SIMS depth profiling improved by rotating stage 190
Vacancy-engineering implants for high boron activation in silicon on insulator 186
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 184
ispettiva di sorveglianza 04-05 Luglio 2013 184
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 181
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 181
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 180
ispettiva di sorveglianza 6-7 giugno 2012. 180
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 179
Real-time observation and optimization of tungsten ALD process cycle 177
Diffusion and electrical activation of indium in silicon 172
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 170
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 170
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 169
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 168
Ultra shallow junction analysis for technology nodes beyond 65nm 168
A very low-energy apparatus for positron scattering on atoms and molecules 167
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 164
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 162
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 162
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 159
Low temperature oxidation of SiC preamorphized by ion implantation 158
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 158
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 157
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 157
Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography 155
Strength and microstructure of friction stir welded additively manufactured Scalmalloy® in as-welded and heat-treated conditions 154
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 152
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 151
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 150
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 148
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 148
Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device 147
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 146
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 145
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 145
Ultra thin oxynitride profiles by XPS etch-back analyses 145
Radiation resistant LGAD design 145
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 144
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 144
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 144
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 143
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 143
Structural analyses of thermal annealed SRO/SiO2 superlattices 142
Suppression of boron interstitial clusters in SOI using vacancy engineering 142
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 140
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 140
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 138
Visita ispettiva annuale di sorveglianza Accredia 138
Surface investigation of archeological glasses by secondary ion mass spectrometry 138
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 137
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 136
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 135
Homogeneity study of traces in pine pollen with SR-μXRF 135
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 134
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 134
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 133
Sample holder implement for very small samples on SC-Ultra SIMS instrument 133
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 133
Secondary ion mass spectrometry analysis applications on semiconductor materials 133
Gold-assisted lithography for suspended nanostructures 133
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 132
Sample topography developed by sputtering in Cameca instruments 132
Diffusion and electrical activation of indium in silicon 132
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 131
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 131
Induced roughness by low energy ion bombardment 131
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 131
Multiscale structured germanium nanoripples as templates for bioactive surfaces 131
Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoids 131
Final report on VAMAS round-robin study to evaluate a correction method for saturation effects in DSIMS 130
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 129
Topography developed by sputtering in a magnetic sector instruments: an AFM and SEM study’ 129
Shallow junction: stato dell'arte ed esigenze analitiche 128
Totale 17.312
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Categoria #
all - tutte 84.086
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 84.086
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021198 0 0 0 0 0 0 0 0 0 0 0 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.882 26 61 364 109 280 49 148 216 1.291 436 573 329
2025/20269.901 365 542 576 607 367 377 1.407 3.637 556 515 901 51
Totale 20.460