IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 9.629
EU - Europa 7.810
AS - Asia 4.321
SA - Sud America 873
Continente sconosciuto - Info sul continente non disponibili 219
AF - Africa 93
OC - Oceania 9
Totale 22.954
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Nazione #
US - Stati Uniti d'America 9.337
RU - Federazione Russa 4.525
SG - Singapore 1.545
CN - Cina 737
HK - Hong Kong 731
DE - Germania 728
BR - Brasile 724
VN - Vietnam 628
SE - Svezia 457
UA - Ucraina 424
IT - Italia 367
IN - India 290
FI - Finlandia 288
FR - Francia 253
GB - Regno Unito 216
IE - Irlanda 163
CA - Canada 154
NL - Olanda 145
AR - Argentina 60
PL - Polonia 57
MX - Messico 55
BD - Bangladesh 52
JP - Giappone 47
ES - Italia 46
IQ - Iraq 43
ZA - Sudafrica 32
EU - Europa 30
BE - Belgio 28
TR - Turchia 28
CO - Colombia 26
AT - Austria 24
IR - Iran 24
LT - Lituania 23
PK - Pakistan 22
SA - Arabia Saudita 22
CR - Costa Rica 17
CZ - Repubblica Ceca 17
EC - Ecuador 17
IL - Israele 17
HN - Honduras 16
ID - Indonesia 14
MA - Marocco 14
PH - Filippine 14
AE - Emirati Arabi Uniti 13
PE - Perù 13
VE - Venezuela 13
JM - Giamaica 11
KR - Corea 10
TN - Tunisia 10
GT - Guatemala 9
UZ - Uzbekistan 9
AU - Australia 8
CH - Svizzera 8
AZ - Azerbaigian 7
JO - Giordania 7
KZ - Kazakistan 7
PY - Paraguay 7
TW - Taiwan 7
DK - Danimarca 6
EG - Egitto 6
KE - Kenya 6
NP - Nepal 6
SC - Seychelles 6
SV - El Salvador 6
TT - Trinidad e Tobago 6
CL - Cile 5
LB - Libano 5
OM - Oman 5
PA - Panama 5
PS - Palestinian Territory 5
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
DO - Repubblica Dominicana 4
ET - Etiopia 4
LV - Lettonia 4
MT - Malta 4
MY - Malesia 4
NG - Nigeria 4
UY - Uruguay 4
BB - Barbados 3
DZ - Algeria 3
EE - Estonia 3
GR - Grecia 3
KG - Kirghizistan 3
RO - Romania 3
RS - Serbia 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TH - Thailandia 3
AL - Albania 2
AM - Armenia 2
BG - Bulgaria 2
GE - Georgia 2
HU - Ungheria 2
LA - Repubblica Popolare Democratica del Laos 2
NO - Norvegia 2
QA - Qatar 2
SK - Slovacchia (Repubblica Slovacca) 2
AO - Angola 1
AW - Aruba 1
Totale 22.749
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Città #
San Jose 1.035
Chandler 876
Council Bluffs 856
Jacksonville 814
Singapore 743
Hong Kong 709
Ashburn 489
Moscow 294
Dallas 260
Beijing 234
Wilmington 216
Boardman 197
The Dalles 180
New York 162
Dublin 160
Los Angeles 160
Helsinki 149
Ho Chi Minh City 143
Dong Ket 140
Hefei 131
Hanoi 126
Trento 118
Kronberg 117
Lauterbourg 108
Santa Clara 107
Dearborn 105
Brooklyn 104
Munich 98
Phoenix 82
Ann Arbor 80
São Paulo 69
Houston 68
Woodbridge 63
Chicago 51
Seattle 50
Atlanta 46
Buffalo 46
Warsaw 42
Frankfurt am Main 39
Orem 38
Tokyo 38
Montreal 36
Pune 36
Rio de Janeiro 35
Shanghai 35
Toronto 35
Turku 35
Haiphong 34
Tampa 34
Garland 30
North Bergen 29
Denver 28
Brussels 26
London 26
San Mateo 26
Cheyenne 25
Da Nang 25
Falls Church 25
Mexico City 25
Miami 25
Augusta 22
Philadelphia 22
Washington 21
Boston 20
Milan 20
Poplar 20
Secaucus 20
Chennai 19
Guangzhou 19
Rome 19
Falkenstein 18
San Francisco 18
The Bronx 18
Baghdad 17
Belo Horizonte 17
Charlotte 17
Johannesburg 17
North Easton 17
Overland Park 16
Norwalk 15
Porto Alegre 15
Stockholm 15
Queens 14
St Petersburg 14
Amsterdam 13
Leawood 13
Mountain View 13
Mumbai 13
Newark 13
Orlando 13
Pergine Valsugana 13
Redwood City 13
Salvador 13
Verona 13
Brno 12
Pittsburgh 12
San José 12
Ardabil 11
Brasília 11
Istanbul 11
Totale 10.742
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Nome #
On the asymmetry of soda lime silicate float glass structure and chemistry 479
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 407
Analytical methodology development for Silicon rich oxide chemical physical characterization 288
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 283
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 281
Arsenic uphill diffusion during shallow junction formation 276
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 276
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 273
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 265
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 255
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 247
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 245
Activated dopant effect on low energy SIMS depth profiling 239
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 238
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 238
Analytical methodology development for SRO chemical physical characterization 237
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 236
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 232
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 231
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 227
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 226
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 225
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 221
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 220
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 215
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 214
Boron ultra low energy SIMS depth profiling improved by rotating stage 213
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 204
Vacancy-engineering implants for high boron activation in silicon on insulator 203
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 203
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 202
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 199
ispettiva di sorveglianza 04-05 Luglio 2013 197
Real-time observation and optimization of tungsten ALD process cycle 195
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 195
ispettiva di sorveglianza 6-7 giugno 2012. 193
Material Characterization of 4H-SiC - Influence of Protection Layer Thickness on Dopant Depth During Ion-Implantation 192
A very low-energy apparatus for positron scattering on atoms and molecules 191
Diffusion and electrical activation of indium in silicon 189
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 188
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 187
Ultra shallow junction analysis for technology nodes beyond 65nm 184
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 183
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 182
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 182
Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography 178
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 178
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 178
Strength and microstructure of friction stir welded additively manufactured Scalmalloy® in as-welded and heat-treated conditions 177
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 177
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 176
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 175
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 173
Low temperature oxidation of SiC preamorphized by ion implantation 170
Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device 169
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 169
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 168
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 165
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 165
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 165
Ultra thin oxynitride profiles by XPS etch-back analyses 165
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 165
Radiation resistant LGAD design 165
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 164
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 164
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 163
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 163
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 162
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 162
Structural analyses of thermal annealed SRO/SiO2 superlattices 161
Suppression of boron interstitial clusters in SOI using vacancy engineering 160
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 158
Gold-assisted lithography for suspended nanostructures 157
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 155
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 155
The first batch of compensated LGAD sensors 154
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 154
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 154
Silicon defects characterization for low temperature ion implantation and RTA process 154
Surface investigation of archeological glasses by secondary ion mass spectrometry 153
Homogeneity study of traces in pine pollen with SR-μXRF 153
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 152
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 152
Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoids 152
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 151
Sample holder implement for very small samples on SC-Ultra SIMS instrument 151
Diffusion and electrical activation of indium in silicon 151
Visita ispettiva annuale di sorveglianza Accredia 151
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 151
Sample topography developed by sputtering in Cameca instruments 150
A Platform for Laser-Driven Ion Sources Generated with Nanosecond Laser Pulses in the Intensity Range of 1013–1015 W/cm2 149
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 149
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 149
Multiscale structured germanium nanoripples as templates for bioactive surfaces 149
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 148
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 148
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 148
Induced roughness by low energy ion bombardment 148
Final report on VAMAS round-robin study to evaluate a correction method for saturation effects in DSIMS 147
Secondary ion mass spectrometry analysis applications on semiconductor materials 146
Totale 19.222
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Categoria #
all - tutte 93.557
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 93.557
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022559 0 0 0 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.882 26 61 364 109 280 49 148 216 1.291 436 573 329
2025/20269.964 365 542 576 607 367 377 1.407 3.637 556 515 901 114
2026/20272.431 511 376 745 799 0 0 0 0 0 0 0 0
Totale 22.954