IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 5.309
EU - Europa 3.849
AS - Asia 3.045
SA - Sud America 755
AF - Africa 57
Continente sconosciuto - Info sul continente non disponibili 30
OC - Oceania 4
Totale 13.049
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Nazione #
US - Stati Uniti d'America 5.194
SG - Singapore 1.207
RU - Federazione Russa 1.181
BR - Brasile 662
HK - Hong Kong 601
DE - Germania 595
CN - Cina 538
UA - Ucraina 418
SE - Svezia 398
FI - Finlandia 278
IT - Italia 257
IN - India 256
VN - Vietnam 215
GB - Regno Unito 172
IE - Irlanda 159
NL - Olanda 138
CA - Canada 66
FR - Francia 66
PL - Polonia 48
AR - Argentina 40
MX - Messico 34
ES - Italia 32
BD - Bangladesh 31
EU - Europa 30
JP - Giappone 27
BE - Belgio 26
IQ - Iraq 25
ZA - Sudafrica 25
IR - Iran 24
LT - Lituania 23
TR - Turchia 19
AT - Austria 18
CZ - Repubblica Ceca 17
PK - Pakistan 15
CO - Colombia 13
SA - Arabia Saudita 13
IL - Israele 12
EC - Ecuador 11
MA - Marocco 10
KR - Corea 8
VE - Venezuela 8
CH - Svizzera 7
PE - Perù 7
ID - Indonesia 6
KE - Kenya 6
KZ - Kazakistan 6
AE - Emirati Arabi Uniti 5
NP - Nepal 5
PY - Paraguay 5
TW - Taiwan 5
UZ - Uzbekistan 5
JM - Giamaica 4
OM - Oman 4
TN - Tunisia 4
AU - Australia 3
BO - Bolivia 3
CL - Cile 3
EG - Egitto 3
LV - Lettonia 3
MT - Malta 3
PA - Panama 3
PS - Palestinian Territory 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
ET - Etiopia 2
LB - Libano 2
PH - Filippine 2
SN - Senegal 2
AL - Albania 1
AO - Angola 1
BG - Bulgaria 1
BW - Botswana 1
CI - Costa d'Avorio 1
EE - Estonia 1
GE - Georgia 1
GP - Guadalupe 1
GR - Grecia 1
GT - Guatemala 1
HU - Ungheria 1
KG - Kirghizistan 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MO - Macao, regione amministrativa speciale della Cina 1
NZ - Nuova Zelanda 1
RO - Romania 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 13.049
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Città #
Chandler 876
Jacksonville 807
Singapore 672
Hong Kong 601
Ashburn 354
Moscow 293
Dallas 224
Wilmington 213
Beijing 205
Boardman 197
Dublin 157
The Dalles 143
Dong Ket 140
Helsinki 139
Hefei 130
Kronberg 117
Trento 112
New York 107
Dearborn 104
Munich 88
Brooklyn 87
Los Angeles 83
Ann Arbor 80
Santa Clara 63
São Paulo 63
Woodbridge 62
Houston 44
Seattle 43
Phoenix 40
Warsaw 37
Turku 35
Pune 34
Shanghai 34
Rio de Janeiro 33
Orem 28
Brussels 26
Atlanta 25
Cheyenne 25
Falls Church 25
San Mateo 25
Tokyo 25
Ho Chi Minh City 24
Denver 22
Toronto 22
Montreal 21
Poplar 20
Council Bluffs 19
London 19
Secaucus 19
Augusta 18
Mexico City 18
Falkenstein 17
Belo Horizonte 16
Boston 16
Guangzhou 16
Overland Park 16
Miami 15
Stockholm 15
Chennai 14
Johannesburg 14
Norwalk 14
San Francisco 14
St Petersburg 14
Frankfurt am Main 13
Hanoi 13
Leawood 13
Mountain View 13
Redwood City 13
Brno 12
Chicago 12
Milan 12
Porto Alegre 12
Ardabil 11
Salvador 11
Brasília 10
Hanover 10
Mumbai 10
Verona 10
Amsterdam 9
Auburn Hills 9
Curitiba 9
Gif-sur-yvette 9
Groningen 9
Haiphong 9
Rome 9
Saint Petersburg 9
San Jose 9
Assago 8
Baghdad 8
Ottawa 8
Tianjin 8
Vienna 8
Charlotte 7
Hillsboro 7
Manchester 7
Portland 7
Campinas 6
Contagem 6
Istanbul 6
Nairobi 6
Totale 7.327
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Nome #
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 330
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 189
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 189
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 187
Analytical methodology development for Silicon rich oxide chemical physical characterization 185
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 179
Arsenic uphill diffusion during shallow junction formation 175
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 163
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 160
Analytical methodology development for SRO chemical physical characterization 156
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 152
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 146
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 144
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 144
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 142
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 141
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 140
Activated dopant effect on low energy SIMS depth profiling 140
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 137
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 135
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 134
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 133
Boron ultra low energy SIMS depth profiling improved by rotating stage 133
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 129
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 127
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 125
ispettiva di sorveglianza 04-05 Luglio 2013 125
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 125
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 125
Real-time observation and optimization of tungsten ALD process cycle 124
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 123
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 122
Diffusion and electrical activation of indium in silicon 121
Vacancy-engineering implants for high boron activation in silicon on insulator 119
ispettiva di sorveglianza 6-7 giugno 2012. 116
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 115
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 115
A very low-energy apparatus for positron scattering on atoms and molecules 113
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 113
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 111
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 111
Low temperature oxidation of SiC preamorphized by ion implantation 108
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 107
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 107
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 107
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 107
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 107
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 106
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 106
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 106
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 106
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 105
Ultra shallow junction analysis for technology nodes beyond 65nm 105
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 104
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 103
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 103
Visita ispettiva annuale di sorveglianza Accredia 102
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 101
Radiation resistant LGAD design 101
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 100
Structural analyses of thermal annealed SRO/SiO2 superlattices 100
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 98
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 97
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 96
Suppression of boron interstitial clusters in SOI using vacancy engineering 95
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 95
Homogeneity study of traces in pine pollen with SR-μXRF 95
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 93
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 92
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 92
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 91
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 91
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 91
Ultra thin oxynitride profiles by XPS etch-back analyses 90
Surface plasmon resonance based on molecularly imprinted nanoparticles for the picomolar detection of the iron regulating hormone Hepcidin-25 90
Surface investigation of archeological glasses by secondary ion mass spectrometry 89
Sample holder implement for very small samples on SC-Ultra SIMS instrument 88
Diffusion and electrical activation of indium in silicon 88
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 88
Induced roughness by low energy ion bombardment 88
Sample topography developed by sputtering in Cameca instruments 87
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 87
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 87
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 86
Silicon defects characterization for low temperature ion implantation and RTA process 86
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 85
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 85
Secondary ion mass spectrometry analysis applications on semiconductor materials 85
Strength and microstructure of friction stir welded additively manufactured Scalmalloy® in as-welded and heat-treated conditions 84
Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography 84
Shallow junction: stato dell'arte ed esigenze analitiche 84
SIMS analytical conditions optimized to reduce the morphology induced by sputtering with an oblique O2+ beam 84
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 83
Topography developed by sputtering in a magnetic sector instruments: an AFM and SEM study’ 83
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 83
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 83
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 82
Visita ispettiva annuale di sorveglianza Accredia 82
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 82
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 82
Totale 11.415
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Categoria #
all - tutte 70.682
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 70.682
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021745 0 0 0 0 0 54 149 14 9 264 57 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.882 26 61 364 109 280 49 148 216 1.291 436 573 329
2025/20262.660 365 542 576 607 367 203 0 0 0 0 0 0
Totale 13.219