IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 4.187
EU - Europa 3.476
AS - Asia 1.791
SA - Sud America 297
Continente sconosciuto - Info sul continente non disponibili 30
AF - Africa 19
OC - Oceania 4
Totale 9.804
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Nazione #
US - Stati Uniti d'America 4.128
RU - Federazione Russa 1.163
SG - Singapore 613
HK - Hong Kong 569
DE - Germania 534
UA - Ucraina 412
SE - Svezia 386
BR - Brasile 280
FI - Finlandia 261
IN - India 204
IT - Italia 192
CN - Cina 170
IE - Irlanda 154
VN - Vietnam 140
NL - Olanda 128
GB - Regno Unito 106
FR - Francia 46
CA - Canada 36
EU - Europa 30
BE - Belgio 26
IR - Iran 24
CZ - Repubblica Ceca 16
LT - Lituania 15
MX - Messico 15
AT - Austria 11
IL - Israele 10
AR - Argentina 7
IQ - Iraq 7
JP - Giappone 7
KR - Corea 7
MA - Marocco 7
PL - Polonia 7
CH - Svizzera 6
BD - Bangladesh 5
PK - Pakistan 5
TR - Turchia 5
TW - Taiwan 5
ES - Italia 4
AU - Australia 3
CO - Colombia 3
KE - Kenya 3
KZ - Kazakistan 3
LV - Lettonia 3
PA - Panama 3
ZA - Sudafrica 3
AM - Armenia 2
AZ - Azerbaigian 2
JM - Giamaica 2
NP - Nepal 2
SA - Arabia Saudita 2
SN - Senegal 2
UZ - Uzbekistan 2
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
CI - Costa d'Avorio 1
CL - Cile 1
CR - Costa Rica 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
EG - Egitto 1
GE - Georgia 1
GR - Grecia 1
GT - Guatemala 1
HU - Ungheria 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
MO - Macao, regione amministrativa speciale della Cina 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
PS - Palestinian Territory 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
TH - Thailandia 1
TN - Tunisia 1
UY - Uruguay 1
VE - Venezuela 1
Totale 9.804
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Città #
Chandler 876
Jacksonville 807
Hong Kong 569
Singapore 322
Moscow 292
Wilmington 212
Ashburn 176
Boardman 169
Dublin 154
Dong Ket 140
Helsinki 138
The Dalles 124
Kronberg 117
Dearborn 104
Trento 89
Ann Arbor 80
Brooklyn 64
Woodbridge 62
Beijing 50
Santa Clara 49
New York 40
Seattle 40
Munich 37
Shanghai 34
Phoenix 33
Houston 32
Pune 31
Los Angeles 28
Brussels 26
Cheyenne 25
Falls Church 25
San Mateo 25
São Paulo 25
Toronto 19
Turku 19
Augusta 18
Falkenstein 17
Overland Park 16
Rio de Janeiro 16
Miami 15
Norwalk 14
Secaucus 14
Leawood 13
Mountain View 13
Redwood City 13
Brno 12
Guangzhou 12
Mexico City 12
Ardabil 11
London 11
Frankfurt am Main 10
Hanover 10
Auburn Hills 9
Council Bluffs 9
Gif-sur-yvette 9
Groningen 9
Saint Petersburg 9
Belo Horizonte 8
Ottawa 8
San Francisco 8
Portland 7
Milan 6
Nanjing 6
Zanjan 6
Bolzano 5
Costa Mesa 5
Fuzhou 5
Porto Alegre 5
Taipei 5
Tokyo 5
Verona 5
Assago 4
Atlanta 4
Campinas 4
Elk Grove Village 4
Goiânia 4
Graz 4
Gunzenhausen 4
Hefei 4
Malakoff 4
Olomouc 4
Pergine Valsugana 4
Recife 4
Salvador 4
St Petersburg 4
Stockholm 4
Warsaw 4
Baselga di Pinè 3
Brasília 3
Casablanca 3
Chennai 3
Contagem 3
Cuiabá 3
Franca 3
Grado 3
Guarulhos 3
Henderson 3
Indaiatuba 3
Iserlohn 3
Nairobi 3
Totale 5.492
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Nome #
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 307
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 136
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 136
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 129
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 128
Analytical methodology development for Silicon rich oxide chemical physical characterization 123
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 117
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 112
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 111
Real-time observation and optimization of tungsten ALD process cycle 109
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 109
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 107
Analytical methodology development for SRO chemical physical characterization 107
Arsenic uphill diffusion during shallow junction formation 106
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 106
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 105
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 105
Diffusion and electrical activation of indium in silicon 104
ispettiva di sorveglianza 04-05 Luglio 2013 104
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 103
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 102
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 101
Vacancy-engineering implants for high boron activation in silicon on insulator 98
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 98
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 98
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 96
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 95
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 95
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 94
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 92
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 92
ispettiva di sorveglianza 6-7 giugno 2012. 91
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 91
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 90
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 90
Activated dopant effect on low energy SIMS depth profiling 90
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 89
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 88
A very low-energy apparatus for positron scattering on atoms and molecules 88
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 88
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 88
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 87
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 87
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 87
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 87
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 87
Boron ultra low energy SIMS depth profiling improved by rotating stage 87
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 87
Ultra shallow junction analysis for technology nodes beyond 65nm 87
Visita ispettiva annuale di sorveglianza Accredia 82
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 81
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 81
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 80
Structural analyses of thermal annealed SRO/SiO2 superlattices 80
Low temperature oxidation of SiC preamorphized by ion implantation 79
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 79
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 79
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 79
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 79
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 78
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 77
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 77
Surface plasmon resonance based on molecularly imprinted nanoparticles for the picomolar detection of the iron regulating hormone Hepcidin-25 76
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 75
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 75
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 73
Surface investigation of archeological glasses by secondary ion mass spectrometry 73
Homogeneity study of traces in pine pollen with SR-μXRF 73
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 72
Suppression of boron interstitial clusters in SOI using vacancy engineering 72
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 72
Induced roughness by low energy ion bombardment 72
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 72
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 71
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 71
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 71
Sample topography developed by sputtering in Cameca instruments 70
Ultra thin oxynitride profiles by XPS etch-back analyses 70
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 70
Diffusion and electrical activation of indium in silicon 69
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 69
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 69
Diffusion of implanted nitrogen in germanium. 69
Silicon defects characterization for low temperature ion implantation and RTA process 69
Sample holder implement for very small samples on SC-Ultra SIMS instrument 68
Shallow junction: stato dell'arte ed esigenze analitiche 68
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 68
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 66
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 66
Visita ispettiva annuale di sorveglianza Accredia 66
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 66
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 65
SIMS analytical conditions optimized to reduce the morphology induced by sputtering with an oblique O2+ beam 64
Secondary ion mass spectrometry analysis applications on semiconductor materials 64
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 63
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 62
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 62
Topography developed by sputtering in a magnetic sector instruments: an AFM and SEM study’ 62
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 62
Nitrided Silicon-Silicon Dioxide Interface: Electrical And Physico-Chemical Characterization By Complementary Surface Analysis Techniques 61
Totale 8.751
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Categoria #
all - tutte 58.159
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.159
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020194 0 0 0 0 0 0 0 0 0 0 129 65
2020/20211.196 149 0 116 73 113 54 149 14 9 264 57 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.294 26 61 364 109 280 49 148 216 1.291 436 314 0
Totale 9.971