IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 4.130
EU - Europa 3.437
AS - Asia 1.713
SA - Sud America 214
Continente sconosciuto - Info sul continente non disponibili 30
AF - Africa 17
OC - Oceania 4
Totale 9.545
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Nazione #
US - Stati Uniti d'America 4.078
RU - Federazione Russa 1.163
HK - Hong Kong 565
SG - Singapore 545
DE - Germania 526
UA - Ucraina 412
SE - Svezia 384
FI - Finlandia 242
IN - India 201
BR - Brasile 198
IT - Italia 189
CN - Cina 170
IE - Irlanda 154
VN - Vietnam 140
NL - Olanda 128
GB - Regno Unito 104
FR - Francia 46
CA - Canada 32
EU - Europa 30
BE - Belgio 26
IR - Iran 24
CZ - Repubblica Ceca 15
LT - Lituania 14
MX - Messico 13
AT - Austria 11
IL - Israele 10
AR - Argentina 7
KR - Corea 7
CH - Svizzera 6
IQ - Iraq 6
JP - Giappone 6
MA - Marocco 6
PL - Polonia 6
BD - Bangladesh 5
PK - Pakistan 5
TW - Taiwan 5
TR - Turchia 4
AU - Australia 3
CO - Colombia 3
KE - Kenya 3
KZ - Kazakistan 3
LV - Lettonia 3
ZA - Sudafrica 3
AM - Armenia 2
AZ - Azerbaigian 2
ES - Italia 2
JM - Giamaica 2
NP - Nepal 2
PA - Panama 2
SA - Arabia Saudita 2
UZ - Uzbekistan 2
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
CI - Costa d'Avorio 1
CL - Cile 1
CR - Costa Rica 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
EG - Egitto 1
GE - Georgia 1
GR - Grecia 1
GT - Guatemala 1
HU - Ungheria 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
MO - Macao, regione amministrativa speciale della Cina 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
PS - Palestinian Territory 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SV - El Salvador 1
TH - Thailandia 1
TN - Tunisia 1
UY - Uruguay 1
Totale 9.545
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Città #
Chandler 876
Jacksonville 807
Hong Kong 565
Singapore 313
Moscow 292
Wilmington 212
Ashburn 175
Boardman 169
Dublin 154
Dong Ket 140
Helsinki 138
The Dalles 119
Kronberg 117
Dearborn 104
Trento 88
Ann Arbor 80
Woodbridge 62
Brooklyn 59
Beijing 50
Santa Clara 49
Seattle 40
New York 36
Shanghai 34
Houston 32
Phoenix 32
Pune 31
Munich 29
Brussels 26
Cheyenne 25
Falls Church 25
Los Angeles 25
San Mateo 25
São Paulo 22
Toronto 19
Augusta 18
Falkenstein 17
Overland Park 16
Miami 15
Norwalk 14
Leawood 13
Mountain View 13
Redwood City 13
Secaucus 13
Brno 12
Guangzhou 12
Rio de Janeiro 12
Ardabil 11
Mexico City 11
Frankfurt am Main 10
Hanover 10
London 10
Auburn Hills 9
Council Bluffs 9
Gif-sur-yvette 9
Groningen 9
Saint Petersburg 9
Ottawa 8
Portland 7
Belo Horizonte 6
Milan 6
Nanjing 6
Zanjan 6
Bolzano 5
Costa Mesa 5
Fuzhou 5
Taipei 5
Verona 5
Assago 4
Elk Grove Village 4
Graz 4
Gunzenhausen 4
Hefei 4
Malakoff 4
Pergine Valsugana 4
Porto Alegre 4
San Francisco 4
St Petersburg 4
Tokyo 4
Baselga di Pinè 3
Casablanca 3
Goiânia 3
Grado 3
Guarulhos 3
Henderson 3
Iserlohn 3
Nairobi 3
Nuremberg 3
Olomouc 3
Parma 3
Perugia 3
Recife 3
Ribeirão Preto 3
Riga 3
Rome 3
Sacramento 3
Saint-Etienne 3
Salvador 3
Suzhou 3
Tappahannock 3
Vienna 3
Totale 5.409
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Nome #
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 305
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 134
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 133
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 127
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 125
Analytical methodology development for Silicon rich oxide chemical physical characterization 116
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 113
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 109
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 107
Real-time observation and optimization of tungsten ALD process cycle 107
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 107
Arsenic uphill diffusion during shallow junction formation 105
Analytical methodology development for SRO chemical physical characterization 105
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 105
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 104
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 103
Diffusion and electrical activation of indium in silicon 103
ispettiva di sorveglianza 04-05 Luglio 2013 103
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 102
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 100
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 99
Vacancy-engineering implants for high boron activation in silicon on insulator 97
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 97
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 97
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 96
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 94
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 93
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 92
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 91
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 89
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 88
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 88
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 88
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 88
Activated dopant effect on low energy SIMS depth profiling 88
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 87
A very low-energy apparatus for positron scattering on atoms and molecules 87
ispettiva di sorveglianza 6-7 giugno 2012. 87
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 87
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 86
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 86
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 86
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 86
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 86
Ultra shallow junction analysis for technology nodes beyond 65nm 86
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 85
Boron ultra low energy SIMS depth profiling improved by rotating stage 85
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 83
Structural analyses of thermal annealed SRO/SiO2 superlattices 80
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 79
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 79
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 79
Visita ispettiva annuale di sorveglianza Accredia 79
Low temperature oxidation of SiC preamorphized by ion implantation 78
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 78
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 78
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 78
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 77
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 76
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 76
Surface plasmon resonance based on molecularly imprinted nanoparticles for the picomolar detection of the iron regulating hormone Hepcidin-25 76
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 75
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 73
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 73
Surface investigation of archeological glasses by secondary ion mass spectrometry 72
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 72
Induced roughness by low energy ion bombardment 72
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 71
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 71
Homogeneity study of traces in pine pollen with SR-μXRF 71
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 71
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 70
Sample topography developed by sputtering in Cameca instruments 70
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 70
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 70
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 70
Diffusion and electrical activation of indium in silicon 69
Ultra thin oxynitride profiles by XPS etch-back analyses 69
Silicon defects characterization for low temperature ion implantation and RTA process 69
Sample holder implement for very small samples on SC-Ultra SIMS instrument 68
Suppression of boron interstitial clusters in SOI using vacancy engineering 68
Diffusion of implanted nitrogen in germanium. 68
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 68
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 67
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 67
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 66
Shallow junction: stato dell'arte ed esigenze analitiche 66
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 65
Visita ispettiva annuale di sorveglianza Accredia 64
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 64
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 64
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 63
SIMS analytical conditions optimized to reduce the morphology induced by sputtering with an oblique O2+ beam 63
Secondary ion mass spectrometry analysis applications on semiconductor materials 63
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 62
Topography developed by sputtering in a magnetic sector instruments: an AFM and SEM study’ 62
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 62
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 60
Nitrided Silicon-Silicon Dioxide Interface: Electrical And Physico-Chemical Characterization By Complementary Surface Analysis Techniques 60
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 58
Totale 8.554
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Categoria #
all - tutte 57.064
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.064
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020194 0 0 0 0 0 0 0 0 0 0 129 65
2020/20211.196 149 0 116 73 113 54 149 14 9 264 57 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.035 26 61 364 109 280 49 148 216 1.291 436 55 0
Totale 9.712