IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 3.678
EU - Europa 2.010
AS - Asia 802
Continente sconosciuto - Info sul continente non disponibili 30
OC - Oceania 3
SA - Sud America 2
AF - Africa 1
Totale 6.526
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Nazione #
US - Stati Uniti d'America 3.653
DE - Germania 463
UA - Ucraina 411
SE - Svezia 382
FI - Finlandia 220
HK - Hong Kong 202
IN - India 200
IE - Irlanda 152
IT - Italia 146
VN - Vietnam 140
CN - Cina 130
GB - Regno Unito 89
SG - Singapore 77
FR - Francia 46
RU - Federazione Russa 43
EU - Europa 30
IR - Iran 24
BE - Belgio 19
CA - Canada 14
CZ - Repubblica Ceca 13
NL - Olanda 13
MX - Messico 11
IL - Israele 10
KR - Corea 7
CH - Svizzera 6
TW - Taiwan 5
JP - Giappone 4
AU - Australia 3
BR - Brasile 2
ES - Italia 2
PL - Polonia 2
EG - Egitto 1
GR - Grecia 1
LT - Lituania 1
MO - Macao, regione amministrativa speciale della Cina 1
PH - Filippine 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 6.526
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Città #
Chandler 876
Jacksonville 807
Wilmington 212
Hong Kong 202
Ashburn 167
Boardman 154
Dublin 152
Dong Ket 140
Helsinki 117
Kronberg 117
Dearborn 104
Ann Arbor 80
Trento 74
Woodbridge 62
Singapore 61
Brooklyn 59
Beijing 49
Seattle 40
New York 33
Houston 32
Phoenix 32
Shanghai 32
Pune 31
Cheyenne 25
Falls Church 25
San Mateo 25
Brussels 19
Augusta 18
Los Angeles 17
Overland Park 16
Norwalk 14
Leawood 13
Mountain View 13
Redwood City 13
Secaucus 12
Ardabil 11
Mexico City 11
Brno 10
Guangzhou 10
Hanover 10
Santa Clara 10
Toronto 10
Auburn Hills 9
Gif-sur-yvette 9
Groningen 9
Saint Petersburg 9
Portland 7
Falkenstein 6
Munich 6
Zanjan 6
Bolzano 5
Costa Mesa 5
Fuzhou 5
Nanjing 5
Taipei 5
Gunzenhausen 4
Hefei 4
Malakoff 4
Pergine Valsugana 4
San Francisco 4
St Petersburg 4
Baselga di Pinè 3
Frankfurt am Main 3
Grado 3
Henderson 3
London 3
Moscow 3
Olomouc 3
Parma 3
Rome 3
Sacramento 3
Saint-Etienne 3
Suzhou 3
Tappahannock 3
Verona 3
Wuhan 3
Aschaffenburg 2
Bari 2
Berlin 2
Cologne 2
Dubendorf 2
Kish 2
Kunming 2
Laion 2
Lausanne 2
Milan 2
North Bergen 2
Nuremberg 2
Padova 2
Quzhou 2
Redmond 2
Rovereto 2
Tel Aviv 2
Tokyo 2
Winnipeg 2
Aberdeen 1
Andover 1
Atlanta 1
Atripalda 1
Bangalore 1
Totale 4.113
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Nome #
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 98
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 95
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 94
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 92
Analytical methodology development for Silicon rich oxide chemical physical characterization 87
Real-time observation and optimization of tungsten ALD process cycle 85
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 81
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 80
Vacancy-engineering implants for high boron activation in silicon on insulator 79
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 78
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 77
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 77
Arsenic uphill diffusion during shallow junction formation 75
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 75
Analytical methodology development for SRO chemical physical characterization 75
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 75
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 74
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 74
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 71
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 71
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 70
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 70
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 70
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 69
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 69
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 68
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 68
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 67
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 66
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 66
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 65
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 65
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 65
Low temperature oxidation of SiC preamorphized by ion implantation 65
Structural analyses of thermal annealed SRO/SiO2 superlattices 65
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 65
Diffusion and electrical activation of indium in silicon 65
Ultra shallow junction analysis for technology nodes beyond 65nm 65
A very low-energy apparatus for positron scattering on atoms and molecules 64
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 64
Activated dopant effect on low energy SIMS depth profiling 64
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 64
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 63
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 62
Surface plasmon resonance based on molecularly imprinted nanoparticles for the picomolar detection of the iron regulating hormone Hepcidin-25 61
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 61
Boron ultra low energy SIMS depth profiling improved by rotating stage 60
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 59
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 59
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 59
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 59
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 58
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 58
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 58
Surface investigation of archeological glasses by secondary ion mass spectrometry 57
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 56
ispettiva di sorveglianza 04-05 Luglio 2013 56
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 55
Silicon defects characterization for low temperature ion implantation and RTA process 55
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 54
Visita ispettiva annuale di sorveglianza Accredia 54
Homogeneity study of traces in pine pollen with SR-μXRF 54
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 53
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 53
Suppression of boron interstitial clusters in SOI using vacancy engineering 53
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 53
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 53
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 52
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 52
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 52
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 52
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 51
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 51
Sample topography developed by sputtering in Cameca instruments 50
Ultra thin oxynitride profiles by XPS etch-back analyses 50
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 50
Induced roughness by low energy ion bombardment 50
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 50
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 49
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 49
Shallow junction: stato dell'arte ed esigenze analitiche 49
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 49
Diffusion of implanted nitrogen in germanium. 49
Secondary ion mass spectrometry analysis applications on semiconductor materials 48
Sample holder implement for very small samples on SC-Ultra SIMS instrument 47
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 47
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 47
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 47
Diffusion and electrical activation of indium in silicon 46
Visita ispettiva annuale di sorveglianza Accredia 46
SIMS analytical conditions optimized to reduce the morphology induced by sputtering with an oblique O2+ beam 46
ispettiva di sorveglianza 6-7 giugno 2012. 46
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 46
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 45
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 45
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 44
Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures 43
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 42
Nitrided Silicon-Silicon Dioxide Interface: Electrical And Physico-Chemical Characterization By Complementary Surface Analysis Techniques 42
Final report on VAMAS round-robin study to evaluate a correction method for saturation effects in DSIMS 42
Totale 6.069
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Categoria #
all - tutte 38.907
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.907
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.175 116 111 18 7 147 66 152 7 142 215 129 65
2020/20211.196 149 0 116 73 113 54 149 14 9 264 57 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20252 2 0 0 0 0 0 0 0 0 0 0 0
Totale 6.679