IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 8.154
EU - Europa 7.699
AS - Asia 4.281
SA - Sud America 854
Continente sconosciuto - Info sul continente non disponibili 218
AF - Africa 87
OC - Oceania 6
Totale 21.299
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Nazione #
US - Stati Uniti d'America 7.941
RU - Federazione Russa 4.524
SG - Singapore 1.541
CN - Cina 735
HK - Hong Kong 725
BR - Brasile 718
DE - Germania 713
VN - Vietnam 627
SE - Svezia 447
UA - Ucraina 424
IT - Italia 317
IN - India 290
FI - Finlandia 288
FR - Francia 247
GB - Regno Unito 197
IE - Irlanda 163
NL - Olanda 143
CA - Canada 113
AR - Argentina 56
PL - Polonia 56
MX - Messico 54
BD - Bangladesh 48
ES - Italia 46
IQ - Iraq 43
JP - Giappone 42
ZA - Sudafrica 32
EU - Europa 30
BE - Belgio 28
TR - Turchia 28
AT - Austria 24
IR - Iran 24
LT - Lituania 23
SA - Arabia Saudita 22
CO - Colombia 21
PK - Pakistan 21
CZ - Repubblica Ceca 17
EC - Ecuador 17
MA - Marocco 14
ID - Indonesia 13
IL - Israele 13
PH - Filippine 13
VE - Venezuela 12
AE - Emirati Arabi Uniti 11
HN - Honduras 10
JM - Giamaica 10
PE - Perù 10
TN - Tunisia 10
KR - Corea 9
CH - Svizzera 8
UZ - Uzbekistan 8
JO - Giordania 7
KZ - Kazakistan 7
PY - Paraguay 7
TW - Taiwan 7
AZ - Azerbaigian 6
EG - Egitto 6
KE - Kenya 6
NP - Nepal 6
AU - Australia 5
CL - Cile 5
PA - Panama 5
PS - Palestinian Territory 5
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
DO - Repubblica Dominicana 4
ET - Etiopia 4
LB - Libano 4
LV - Lettonia 4
MT - Malta 4
NG - Nigeria 4
OM - Oman 4
TT - Trinidad e Tobago 4
UY - Uruguay 4
BB - Barbados 3
DZ - Algeria 3
GR - Grecia 3
GT - Guatemala 3
KG - Kirghizistan 3
RO - Romania 3
RS - Serbia 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TH - Thailandia 3
AL - Albania 2
AM - Armenia 2
BG - Bulgaria 2
CR - Costa Rica 2
GE - Georgia 2
HU - Ungheria 2
NO - Norvegia 2
QA - Qatar 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
AO - Angola 1
BS - Bahamas 1
BW - Botswana 1
CG - Congo 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
Totale 21.099
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Città #
San Jose 917
Chandler 876
Council Bluffs 856
Jacksonville 810
Singapore 740
Hong Kong 706
Ashburn 452
Moscow 294
Dallas 241
Beijing 233
Wilmington 215
Boardman 197
The Dalles 180
Dublin 160
Helsinki 149
Ho Chi Minh City 142
Dong Ket 140
Hefei 131
New York 127
Hanoi 126
Los Angeles 123
Kronberg 117
Trento 114
Lauterbourg 108
Dearborn 105
Brooklyn 97
Munich 88
Santa Clara 85
Ann Arbor 80
Phoenix 69
São Paulo 68
Woodbridge 63
Houston 56
Seattle 48
Warsaw 41
Atlanta 40
Frankfurt am Main 38
Orem 37
Pune 36
Rio de Janeiro 35
Shanghai 35
Turku 35
Haiphong 34
Tokyo 33
Chicago 30
Toronto 30
Montreal 28
Brussels 26
Cheyenne 25
Da Nang 25
Falls Church 25
London 25
Mexico City 25
San Mateo 25
Denver 23
Augusta 21
Miami 20
Poplar 20
Chennai 19
Guangzhou 19
Secaucus 19
Boston 18
Falkenstein 18
Milan 18
Philadelphia 18
Baghdad 17
Belo Horizonte 17
Johannesburg 17
Overland Park 16
Porto Alegre 15
Rome 15
Stockholm 15
Norwalk 14
San Francisco 14
St Petersburg 14
Leawood 13
Mountain View 13
Mumbai 13
Pergine Valsugana 13
Redwood City 13
Washington 13
Amsterdam 12
Brno 12
Salvador 12
The Bronx 12
Ardabil 11
Brasília 11
Buffalo 11
Istanbul 11
Tianjin 11
Vienna 11
Hanover 10
Nanjing 10
Nuremberg 10
Verona 10
Auburn Hills 9
Charlotte 9
Curitiba 9
Gif-sur-yvette 9
Groningen 9
Totale 10.185
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Nome #
On the asymmetry of soda lime silicate float glass structure and chemistry 463
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 396
Analytical methodology development for Silicon rich oxide chemical physical characterization 274
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 271
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 266
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 262
Arsenic uphill diffusion during shallow junction formation 258
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 257
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 250
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 240
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 235
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 232
Analytical methodology development for SRO chemical physical characterization 225
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 225
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 222
Activated dopant effect on low energy SIMS depth profiling 221
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 220
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 219
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 218
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 215
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 214
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 207
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 205
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 204
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 203
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 202
Boron ultra low energy SIMS depth profiling improved by rotating stage 197
Vacancy-engineering implants for high boron activation in silicon on insulator 190
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 190
ispettiva di sorveglianza 04-05 Luglio 2013 188
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 187
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 186
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 185
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 184
ispettiva di sorveglianza 6-7 giugno 2012. 183
Real-time observation and optimization of tungsten ALD process cycle 181
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 179
Diffusion and electrical activation of indium in silicon 177
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 174
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 174
Ultra shallow junction analysis for technology nodes beyond 65nm 174
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 173
A very low-energy apparatus for positron scattering on atoms and molecules 171
Material Characterization of 4H-SiC - Influence of Protection Layer Thickness on Dopant Depth During Ion-Implantation 169
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 166
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 166
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 166
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 165
Strength and microstructure of friction stir welded additively manufactured Scalmalloy® in as-welded and heat-treated conditions 164
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 164
Low temperature oxidation of SiC preamorphized by ion implantation 163
Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography 162
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 162
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 161
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 156
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 155
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 154
Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device 153
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 153
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 152
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 152
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 152
Radiation resistant LGAD design 151
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 150
Ultra thin oxynitride profiles by XPS etch-back analyses 150
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 149
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 149
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 148
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 148
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 148
Structural analyses of thermal annealed SRO/SiO2 superlattices 147
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 146
Suppression of boron interstitial clusters in SOI using vacancy engineering 146
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 146
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 144
Visita ispettiva annuale di sorveglianza Accredia 143
Gold-assisted lithography for suspended nanostructures 142
Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoids 142
The first batch of compensated LGAD sensors 141
Surface investigation of archeological glasses by secondary ion mass spectrometry 141
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 141
Homogeneity study of traces in pine pollen with SR-μXRF 140
The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions 140
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 140
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 139
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 139
Sample holder implement for very small samples on SC-Ultra SIMS instrument 139
Sample topography developed by sputtering in Cameca instruments 138
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 138
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 137
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 137
Secondary ion mass spectrometry analysis applications on semiconductor materials 137
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 137
A Platform for Laser-Driven Ion Sources Generated with Nanosecond Laser Pulses in the Intensity Range of 1013–1015 W/cm2 136
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 136
Diffusion and electrical activation of indium in silicon 136
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 136
Silicon defects characterization for low temperature ion implantation and RTA process 136
Multiscale structured germanium nanoripples as templates for bioactive surfaces 136
Induced roughness by low energy ion bombardment 135
Totale 17.916
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Categoria #
all - tutte 87.839
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 87.839
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022578 0 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.882 26 61 364 109 280 49 148 216 1.291 436 573 329
2025/20269.964 365 542 576 607 367 377 1.407 3.637 556 515 901 114
2026/2027776 511 265 0 0 0 0 0 0 0 0 0 0
Totale 21.299