IRIS Institutional Research Information System

Barozzi, Mario
 Distribuzione geografica
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Continente #
EU - Europa 7.626
NA - Nord America 6.450
AS - Asia 4.202
SA - Sud America 844
AF - Africa 87
Continente sconosciuto - Info sul continente non disponibili 30
OC - Oceania 6
Totale 19.245
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Nazione #
US - Stati Uniti d'America 6.297
RU - Federazione Russa 4.524
SG - Singapore 1.514
HK - Hong Kong 718
BR - Brasile 715
DE - Germania 709
CN - Cina 704
VN - Vietnam 623
UA - Ucraina 424
SE - Svezia 423
IT - Italia 292
IN - India 290
FI - Finlandia 288
FR - Francia 235
GB - Regno Unito 197
IE - Irlanda 163
NL - Olanda 142
CA - Canada 78
PL - Polonia 56
AR - Argentina 55
MX - Messico 49
BD - Bangladesh 48
ES - Italia 45
IQ - Iraq 43
JP - Giappone 37
ZA - Sudafrica 32
EU - Europa 30
BE - Belgio 28
TR - Turchia 28
IR - Iran 24
LT - Lituania 23
AT - Austria 22
SA - Arabia Saudita 22
PK - Pakistan 21
CO - Colombia 18
CZ - Repubblica Ceca 17
EC - Ecuador 15
MA - Marocco 14
IL - Israele 13
PH - Filippine 13
AE - Emirati Arabi Uniti 11
ID - Indonesia 11
VE - Venezuela 11
PE - Perù 10
TN - Tunisia 10
KR - Corea 9
CH - Svizzera 7
JM - Giamaica 7
JO - Giordania 7
KZ - Kazakistan 7
PY - Paraguay 7
UZ - Uzbekistan 7
AZ - Azerbaigian 6
EG - Egitto 6
KE - Kenya 6
NP - Nepal 6
TW - Taiwan 6
AU - Australia 5
CL - Cile 5
PA - Panama 5
PS - Palestinian Territory 5
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
DO - Repubblica Dominicana 4
ET - Etiopia 4
LB - Libano 4
LV - Lettonia 4
MT - Malta 4
NG - Nigeria 4
OM - Oman 4
UY - Uruguay 4
DZ - Algeria 3
HN - Honduras 3
KG - Kirghizistan 3
RO - Romania 3
RS - Serbia 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TH - Thailandia 3
AM - Armenia 2
BG - Bulgaria 2
CR - Costa Rica 2
GE - Georgia 2
GR - Grecia 2
HU - Ungheria 2
QA - Qatar 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
AL - Albania 1
AO - Angola 1
BW - Botswana 1
CG - Congo 1
CI - Costa d'Avorio 1
DK - Danimarca 1
EE - Estonia 1
GP - Guadalupe 1
GT - Guatemala 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 19.237
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Città #
Chandler 876
San Jose 818
Jacksonville 808
Singapore 734
Hong Kong 700
Ashburn 439
Moscow 294
Beijing 227
Dallas 224
Wilmington 213
Boardman 197
The Dalles 180
Dublin 160
Helsinki 149
Dong Ket 140
Ho Chi Minh City 140
Hefei 131
Hanoi 125
Kronberg 117
Los Angeles 116
New York 116
Trento 113
Lauterbourg 108
Dearborn 104
Brooklyn 88
Munich 88
Ann Arbor 80
Santa Clara 68
São Paulo 67
Woodbridge 62
Houston 46
Seattle 45
Phoenix 43
Warsaw 41
Frankfurt am Main 38
Orem 36
Pune 36
Rio de Janeiro 35
Shanghai 35
Turku 35
Haiphong 34
Tokyo 33
Brussels 26
Atlanta 25
Cheyenne 25
Council Bluffs 25
Da Nang 25
Falls Church 25
San Mateo 25
London 24
Montreal 24
Toronto 24
Denver 23
Mexico City 21
Poplar 20
Chennai 19
Guangzhou 19
Secaucus 19
Augusta 18
Falkenstein 18
Baghdad 17
Belo Horizonte 17
Johannesburg 17
Miami 17
Boston 16
Overland Park 16
Porto Alegre 15
Stockholm 15
Chicago 14
Milan 14
Norwalk 14
Rome 14
San Francisco 14
St Petersburg 14
Leawood 13
Mountain View 13
Mumbai 13
Pergine Valsugana 13
Redwood City 13
Amsterdam 12
Brno 12
Salvador 12
Ardabil 11
Brasília 11
Istanbul 11
Tianjin 11
Hanover 10
Verona 10
Vienna 10
Auburn Hills 9
Curitiba 9
Gif-sur-yvette 9
Groningen 9
Nanjing 9
New Delhi 9
Saint Petersburg 9
Assago 8
Campinas 8
Hillsboro 8
Nuremberg 8
Totale 9.028
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Nome #
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 388
Analytical methodology development for Silicon rich oxide chemical physical characterization 263
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 256
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 254
2D Optical Gratings Based on Hexagonal Voids on Transparent Elastomeric Substrate 250
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 247
Arsenic uphill diffusion during shallow junction formation 244
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization 231
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 227
Compositional changes by SIMS and XPS analyses on fresh and aged Roman-like glass 227
Combined XPS, SIMS and AFM analysis of silicon nanocrystals embedded in silicon oxide layers 221
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 216
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 215
Analytical methodology development for SRO chemical physical characterization 214
Activated dopant effect on low energy SIMS depth profiling 212
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 212
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 210
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 207
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 204
Combined XPS, SIMS and AFM analysis of silicon nano-crystals embedded in silicon oxide layers 201
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 196
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 194
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 194
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 194
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 193
Boron ultra low energy SIMS depth profiling improved by rotating stage 186
Vacancy-engineering implants for high boron activation in silicon on insulator 183
ispettiva di sorveglianza 04-05 Luglio 2013 180
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 179
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 177
Real-time observation and optimization of tungsten ALD process cycle 176
ispettiva di sorveglianza 6-7 giugno 2012. 176
Angle resolved XPS for selective characterization of internal and external surface of porous silicon 175
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 174
Tunable formation of nanostructured SiC/SiOC core-shell for selective detection of SO2 174
Diffusion and electrical activation of indium in silicon 171
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 166
Ultra shallow junction analysis for technology nodes beyond 65nm 165
A very low-energy apparatus for positron scattering on atoms and molecules 164
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 164
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films 164
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 163
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 162
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas 157
VAMAS round robin study to evaluate a correction method for saturation effects in DSIMS 157
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 155
Low temperature oxidation of SiC preamorphized by ion implantation 154
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 151
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 150
Structural and near -infra red luminescence properties of Nd - doped TiO2 films deposited by RF sputtering 150
Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography 149
Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches 148
Strength and microstructure of friction stir welded additively manufactured Scalmalloy® in as-welded and heat-treated conditions 147
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 147
Depth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 147
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 146
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 145
Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation 142
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 142
Ultra thin oxynitride profiles by XPS etch-back analyses 142
Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device 141
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 140
Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM 140
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 139
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 139
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 139
Suppression of boron interstitial clusters in SOI using vacancy engineering 138
Radiation resistant LGAD design 138
Porosity- induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics 137
Non destructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry 137
Structural analyses of thermal annealed SRO/SiO2 superlattices 137
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 137
SIMS and ToF-SIMS Quantitative Depth profiles Comparison on Ultra Thin Oxynitrides: Ultimate Depth Resolution Analyses 135
Surface investigation of archeological glasses by secondary ion mass spectrometry 135
Visita ispettiva annuale di sorveglianza Accredia 134
XPS and SIMS Depth Profiling of Chlorine in Oxynitrides Obtained by HTO Process 134
Homogeneity study of traces in pine pollen with SR-μXRF 133
Ultrathin Multilayer Dielectrics Analyses by XPS wet-etching and SIMS profile 132
Nitride Silicon-Silicon Dioxide Interface: Electrical and Phisico-Chemical Characterization by Complementary Surface Techniques 132
Sample topography developed by sputtering in Cameca instruments 131
Secondary ion mass spectrometry analysis applications on semiconductor materials 131
Sample holder implement for very small samples on SC-Ultra SIMS instrument 130
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 130
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 129
Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoids 129
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies 128
Diffusion and electrical activation of indium in silicon 128
Induced roughness by low energy ion bombardment 128
TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM 127
Final report on VAMAS round-robin study to evaluate a correction method for saturation effects in DSIMS 127
Low and high-cycle fatigue properties of an ultrahigh-strength TRIP bainitic steel 127
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation 126
Topography developed by sputtering in a magnetic sector instruments: an AFM and SEM study’ 125
MCs+ and MCs2+ Molecular Ions Emission from Transition Metal Silicides 125
Silicon defects characterization for low temperature ion implantation and RTA process 125
Gold-assisted lithography for suspended nanostructures 125
Shallow junction: stato dell'arte ed esigenze analitiche 124
SURFACE INVESTIGATIONS OF ARCHAEOLOGICAL GLASSES BY SECONDARY ION MASS SPECTROMETRY 124
Surface plasmon resonance based on molecularly imprinted nanoparticles for the picomolar detection of the iron regulating hormone Hepcidin-25 122
A Platform for Laser-Driven Ion Sources Generated with Nanosecond Laser Pulses in the Intensity Range of 1013–1015 W/cm2 121
Totale 16.557
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Categoria #
all - tutte 79.575
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 79.575
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021519 0 0 0 0 0 0 0 0 0 264 57 198
2021/2022603 25 14 5 96 26 15 19 104 40 38 75 146
2022/20231.645 44 115 36 306 114 282 7 108 400 130 73 30
2023/20241.174 114 55 113 62 69 145 58 147 38 207 16 150
2024/20253.882 26 61 364 109 280 49 148 216 1.291 436 573 329
2025/20268.874 365 542 576 607 367 377 1.407 3.637 556 440 0 0
Totale 19.433