Forming highly stable, low resistive, ultra shallow p-type junctions is well known to be a challenge for future transistor devices. This paper investigates the junction stability of boron layers formed with an optimized 160keV silicon vacancy engineering implant in SOI. It is demonstrated that when the electrical activation is well above the solid solubility a combination of diffusion and possible boron precipitation, during prolonged annealing at 850°C, drives the boron to return to an equilibrium level of electrical activation, which is compensated by the carrier mobility to maintain a constant Rs. Reducing the anneal temperature to 700°C shows it is possible to create highly stable p-type junctions in terms of diffusion and sheet resistance.
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants
Gennaro, Salvatore;Giubertoni, Damiano;Bersani, Massimo;Barozzi, Mario
2006-01-01
Abstract
Forming highly stable, low resistive, ultra shallow p-type junctions is well known to be a challenge for future transistor devices. This paper investigates the junction stability of boron layers formed with an optimized 160keV silicon vacancy engineering implant in SOI. It is demonstrated that when the electrical activation is well above the solid solubility a combination of diffusion and possible boron precipitation, during prolonged annealing at 850°C, drives the boron to return to an equilibrium level of electrical activation, which is compensated by the carrier mobility to maintain a constant Rs. Reducing the anneal temperature to 700°C shows it is possible to create highly stable p-type junctions in terms of diffusion and sheet resistance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
