Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic

High concentration dopant distributions in silicon like those required to form ultra shallow junctions can affect SIMS analyses introducing matrix effects on secondary ions, otherwise not observed in more dilute regimes. In this work the effect of high arsenic concentration on negative secondary ion yield has been investigated when sputtering with a 0.5 keV Cs+ primary beam in a magnetic sector instrument. Two effects have been distinguished: the first one is a variation of matrix signals observed on as implanted samples in correspondence with the projected range, probably due to the damage induced by the high dose implant; the second is a step observed for several species and related to the arsenic distribution. The latter seems due to the effect of the active dopant on secondary ion energy distributions. A wide and well-centred energy slit can limit this effect allowing a more accurate quantification of the activated high As concentrations.