Radiation resistant LGAD design

In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD)manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs witha gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium havebeen designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to [] and to proton fluences up to [] to test their radiation resistance. Theexperimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removalmechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium andBoron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boronimplant, indicating a dependence of the initial acceptor removal mechanism upon the implant density