In the last years a lot of effort has been directed in order to reduce silicon defects eventually formed during the ion implantation/anneal sequence used in the fabrication of CMOS devices. In this work we explored the effect of ion implant dose rate and temperature on the formation of silicon defects for high fluence 49BF2 implantations. The considered processes (implantation and annealing) conditions are those typically used to form the source/drain regions of p-channel transistors in the submicron technology node and will be detailed in the document. Characterization of implant damage and extended silicon defects left after anneal has been performed by TEM. Dopant distribution and dopant activation has been investigated by SIMS and SRP analysis. We have verified that implant dose rate and temperature modulate the thickness of the amorphous silicon observed after implant, as well as the concentrations of silicon defects left after anneal. Effect of high dose rate low temperature implantation on product device was also evaluated, showing a reduction of leakage current on p-channel transistors. Experimental set up, results and possible explanation will be reported and discussed in the paper.

Silicon defects characterization for low temperature ion implantation and RTA process

Barozzi, Mario;Giubertoni, Damiano;
2015-01-01

Abstract

In the last years a lot of effort has been directed in order to reduce silicon defects eventually formed during the ion implantation/anneal sequence used in the fabrication of CMOS devices. In this work we explored the effect of ion implant dose rate and temperature on the formation of silicon defects for high fluence 49BF2 implantations. The considered processes (implantation and annealing) conditions are those typically used to form the source/drain regions of p-channel transistors in the submicron technology node and will be detailed in the document. Characterization of implant damage and extended silicon defects left after anneal has been performed by TEM. Dopant distribution and dopant activation has been investigated by SIMS and SRP analysis. We have verified that implant dose rate and temperature modulate the thickness of the amorphous silicon observed after implant, as well as the concentrations of silicon defects left after anneal. Effect of high dose rate low temperature implantation on product device was also evaluated, showing a reduction of leakage current on p-channel transistors. Experimental set up, results and possible explanation will be reported and discussed in the paper.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/302873
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact