In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion implantation. The experimental conditions to grow oxide layers on SiC with high oxidation rate and low temperature have been determined. Rutherford back scattering channeling, secondary ion mass spectrometry, and x-ray photoelectron spectroscopy analyses have been used to investigate the oxide characteristics and composition. During wet oxidation at 800 degreesC, a linear growth rate of about 0.7 nm/min has been found for layers as thick as 240 nm. The presence of a SiO2Cx transition region between a stoichiometric SiO2 layer and the SiC substrate has been evidenced. The thickness of this transition layer increases with the oxidation time up to reach 118 nm for 390 min.
Low temperature oxidation of SiC preamorphized by ion implantation
Barozzi, Mario;Vanzetti, Lia Emanuela
2004-01-01
Abstract
In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion implantation. The experimental conditions to grow oxide layers on SiC with high oxidation rate and low temperature have been determined. Rutherford back scattering channeling, secondary ion mass spectrometry, and x-ray photoelectron spectroscopy analyses have been used to investigate the oxide characteristics and composition. During wet oxidation at 800 degreesC, a linear growth rate of about 0.7 nm/min has been found for layers as thick as 240 nm. The presence of a SiO2Cx transition region between a stoichiometric SiO2 layer and the SiC substrate has been evidenced. The thickness of this transition layer increases with the oxidation time up to reach 118 nm for 390 min.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
