IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
NA - Nord America 7.122
EU - Europa 6.976
AS - Asia 2.901
SA - Sud America 349
Continente sconosciuto - Info sul continente non disponibili 40
AF - Africa 37
OC - Oceania 16
Totale 17.441
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Nazione #
US - Stati Uniti d'America 7.023
RU - Federazione Russa 1.987
UA - Ucraina 1.326
SG - Singapore 999
DE - Germania 881
HK - Hong Kong 767
SE - Svezia 630
IT - Italia 476
FI - Finlandia 446
CN - Cina 365
BR - Brasile 319
IE - Irlanda 285
IN - India 258
GB - Regno Unito 251
NL - Olanda 247
VN - Vietnam 174
FR - Francia 149
BE - Belgio 79
JP - Giappone 73
KR - Corea 67
CA - Canada 59
CZ - Repubblica Ceca 53
IL - Israele 42
EU - Europa 40
IR - Iran 39
EE - Estonia 37
AT - Austria 35
ES - Italia 23
MX - Messico 22
CH - Svizzera 16
LT - Lituania 16
TW - Taiwan 16
BD - Bangladesh 14
AR - Argentina 12
AU - Australia 12
IQ - Iraq 11
MA - Marocco 11
PL - Polonia 11
BZ - Belize 10
MY - Malesia 10
PK - Pakistan 10
TR - Turchia 9
ZA - Sudafrica 8
RS - Serbia 7
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
EC - Ecuador 5
PH - Filippine 5
AM - Armenia 4
AZ - Azerbaigian 4
CO - Colombia 4
JO - Giordania 4
KE - Kenya 4
NP - Nepal 4
NZ - Nuova Zelanda 4
AL - Albania 3
KG - Kirghizistan 3
LV - Lettonia 3
PA - Panama 3
PT - Portogallo 3
PY - Paraguay 3
SK - Slovacchia (Repubblica Slovacca) 3
TN - Tunisia 3
BO - Bolivia 2
CI - Costa d'Avorio 2
EG - Egitto 2
GR - Grecia 2
HU - Ungheria 2
JM - Giamaica 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
MD - Moldavia 2
SN - Senegal 2
TH - Thailandia 2
VE - Venezuela 2
BY - Bielorussia 1
CL - Cile 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
ID - Indonesia 1
KW - Kuwait 1
LU - Lussemburgo 1
NG - Nigeria 1
OM - Oman 1
PS - Palestinian Territory 1
RO - Romania 1
SA - Arabia Saudita 1
SV - El Salvador 1
TG - Togo 1
UY - Uruguay 1
ZW - Zimbabwe 1
Totale 17.441
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Città #
Chandler 1.358
Jacksonville 1.206
Hong Kong 753
Singapore 638
Moscow 501
Boardman 374
Ashburn 361
Wilmington 355
Dublin 283
The Dalles 275
Helsinki 266
Ann Arbor 191
Kronberg 189
Dong Ket 172
Trento 170
Dearborn 160
Santa Clara 133
Woodbridge 106
Shanghai 100
Beijing 96
Brussels 79
Pune 71
New York 68
Seattle 68
Los Angeles 66
Phoenix 64
Brooklyn 62
Southend 57
Munich 52
Falls Church 47
Brno 44
San Mateo 38
Falkenstein 37
Toronto 36
Amsterdam 33
Rome 33
Secaucus 33
Augusta 32
Houston 30
São Paulo 28
Vienna 28
Mountain View 26
Redwood City 26
Frankfurt am Main 24
Milan 24
Miami 22
Tokyo 22
Guangzhou 20
Hanover 18
Buffalo 17
Norwalk 17
St Petersburg 17
Cheyenne 16
London 16
Mexico City 16
Ottawa 15
Assago 14
Nuremberg 14
Bologna 13
Leawood 13
Ardabil 12
Taipei 12
Hefei 11
Pisa 11
Portland 11
Rio de Janeiro 11
Saint Petersburg 10
Sunnyvale 10
Verona 10
Belo Horizonte 9
Bolzano 9
Groningen 9
Paris 9
Tappahannock 9
Wako 9
Zanjan 9
Durham 8
Olomouc 8
Council Bluffs 7
Espoo 7
Gif-sur-yvette 7
Lastra a Signa 7
Melbourne 7
Redmond 7
San Jose 7
Tel Aviv 7
Auburn Hills 6
Besançon 6
Böblingen 6
Cologne 6
Elk Grove Village 6
Laion 6
Nanjing 6
Reigate 6
Salvador 6
Suwon 6
Tashkent 6
Zhengzhou 6
Brasília 5
Costa Mesa 5
Totale 9.358
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 824
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 305
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 167
Dynamic SIMS Characterization of Ge1-xSnx alloy 142
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 133
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 133
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 130
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 127
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 125
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 125
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 123
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 123
Development of quantum limited superconducting amplifiers for advanced detection 123
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 118
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 116
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 115
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 115
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 115
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 113
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 113
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 111
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 110
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 109
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 109
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 108
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 107
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 107
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 107
Arsenic uphill diffusion during shallow junction formation 105
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 105
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 104
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 103
Diffusion and electrical activation of indium in silicon 103
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 103
ispettiva di sorveglianza 04-05 Luglio 2013 103
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 102
GIXRF characterization of thin Ge1-xSnx films 102
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 102
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 101
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 101
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 101
Near infra-red light detection enhancement of plasmonic photodetectors 100
Hydrogen diffusion in GaAs1−xNx 100
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 99
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 99
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 98
Vacancy-engineering implants for high boron activation in silicon on insulator 97
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 97
Detector Array Readout with Traveling Wave Amplifiers 97
Investigation on indium diffusion in silicon 96
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 96
Characterization of Junction Activation and Deactivation Using non-Equilibrium 96
Boron pile-up phenomena during ultra shallow junction formation 94
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 94
Nanofabrication of self-organized periodic ripples by ion beam sputtering 94
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 93
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 93
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 92
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 92
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 91
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 90
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 90
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 89
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 89
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 88
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 88
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 88
Activated dopant effect on low energy SIMS depth profiling 88
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 88
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 87
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 87
Dynamic SIMS Characterization of Ge1-xSnx alloy 87
ispettiva di sorveglianza 6-7 giugno 2012. 87
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 86
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 86
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 86
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 86
Ultra shallow junction analysis for technology nodes beyond 65nm 86
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 85
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 85
Boron ultra low energy SIMS depth profiling improved by rotating stage 85
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 85
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 84
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 83
Complementary metrology within a European joint laboratory 83
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 83
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 83
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 82
Shallow NV- colour centres in diamond 81
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 81
Uphill diffusion of ultra-low energy boron implants in preamorphised silicon and SOI 80
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 79
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 79
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 79
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 79
Visita ispettiva annuale di sorveglianza Accredia 79
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 79
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 79
Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence 78
On an improved boron segregation calibration from a particularly sensitive power MOS process 78
Totale 10.771
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Categoria #
all - tutte 96.415
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 96.415
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020326 0 0 0 0 0 0 0 0 0 0 200 126
2020/20212.601 953 13 179 123 180 62 227 18 24 414 116 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20255.597 96 178 794 237 321 131 193 427 2.330 783 107 0
Totale 17.646