IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
NA - Nord America 7.748
EU - Europa 7.393
AS - Asia 3.666
SA - Sud America 900
AF - Africa 87
Continente sconosciuto - Info sul continente non disponibili 40
OC - Oceania 17
Totale 19.851
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Nazione #
US - Stati Uniti d'America 7.583
RU - Federazione Russa 2.007
UA - Ucraina 1.343
SG - Singapore 1.053
DE - Germania 1.005
BR - Brasile 813
HK - Hong Kong 798
CN - Cina 758
SE - Svezia 639
IT - Italia 549
FI - Finlandia 484
IN - India 321
GB - Regno Unito 310
IE - Irlanda 287
NL - Olanda 255
VN - Vietnam 218
FR - Francia 159
JP - Giappone 92
CA - Canada 90
BE - Belgio 79
KR - Corea 75
CZ - Repubblica Ceca 55
BD - Bangladesh 48
IL - Israele 45
ES - Italia 42
AT - Austria 41
EU - Europa 40
IR - Iran 39
EE - Estonia 37
MX - Messico 37
AR - Argentina 32
IQ - Iraq 31
ZA - Sudafrica 27
LT - Lituania 24
PK - Pakistan 24
TR - Turchia 23
PL - Polonia 22
MA - Marocco 20
SA - Arabia Saudita 20
CH - Svizzera 19
TW - Taiwan 16
UZ - Uzbekistan 14
AU - Australia 13
MY - Malesia 13
AE - Emirati Arabi Uniti 10
BZ - Belize 10
EC - Ecuador 10
CO - Colombia 9
KE - Kenya 9
NP - Nepal 9
VE - Venezuela 9
JO - Giordania 8
KZ - Kazakistan 8
PH - Filippine 8
JM - Giamaica 7
OM - Oman 7
RS - Serbia 7
SN - Senegal 7
TN - Tunisia 7
UY - Uruguay 7
PE - Perù 6
PY - Paraguay 6
AL - Albania 5
AZ - Azerbaigian 5
BO - Bolivia 5
EG - Egitto 5
PA - Panama 5
TT - Trinidad e Tobago 5
AM - Armenia 4
ET - Etiopia 4
LB - Libano 4
NZ - Nuova Zelanda 4
BB - Barbados 3
BY - Bielorussia 3
CL - Cile 3
CR - Costa Rica 3
DO - Repubblica Dominicana 3
KG - Kirghizistan 3
LV - Lettonia 3
PT - Portogallo 3
SK - Slovacchia (Repubblica Slovacca) 3
BA - Bosnia-Erzegovina 2
CI - Costa d'Avorio 2
DZ - Algeria 2
GR - Grecia 2
HR - Croazia 2
HU - Ungheria 2
KW - Kuwait 2
LA - Repubblica Popolare Democratica del Laos 2
MD - Moldavia 2
PS - Palestinian Territory 2
TH - Thailandia 2
AO - Angola 1
BH - Bahrain 1
GE - Georgia 1
GP - Guadalupe 1
ID - Indonesia 1
LU - Lussemburgo 1
NG - Nigeria 1
RO - Romania 1
Totale 19.847
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Città #
Chandler 1.358
Jacksonville 1.207
Hong Kong 779
Singapore 679
Moscow 502
Boardman 416
Ashburn 393
Wilmington 355
Dublin 283
The Dalles 282
Helsinki 268
Beijing 264
Hefei 225
Trento 205
Ann Arbor 191
Kronberg 189
Dong Ket 172
Munich 165
Dearborn 160
Santa Clara 147
Woodbridge 106
Shanghai 100
Los Angeles 96
New York 89
Brooklyn 83
Brussels 79
Pune 74
Seattle 72
Phoenix 69
São Paulo 62
Southend 57
Falls Church 47
Brno 44
Secaucus 39
Rome 38
San Mateo 38
Amsterdam 37
Falkenstein 37
Toronto 37
Turku 36
Tokyo 33
Augusta 32
Houston 32
Rio de Janeiro 31
Vienna 30
Milan 27
Mountain View 26
Redwood City 26
Frankfurt am Main 25
St Petersburg 25
Belo Horizonte 24
Boston 24
Buffalo 24
Miami 23
Assago 22
London 22
San Francisco 22
Guangzhou 20
Mexico City 19
Montreal 19
Atlanta 18
Hanover 18
Norwalk 17
Cheyenne 16
Nuremberg 16
Brasília 15
Hanoi 15
Ottawa 15
Chicago 14
Ho Chi Minh City 14
Porto Alegre 14
Tashkent 14
Bologna 13
Council Bluffs 13
Leawood 13
San Jose 13
Warsaw 13
Ardabil 12
Salvador 12
Stockholm 12
Taipei 12
Verona 12
Curitiba 11
Dallas 11
Johannesburg 11
Kyiv 11
Pisa 11
Portland 11
Charlotte 10
Guarulhos 10
Olomouc 10
Paris 10
Saint Petersburg 10
Salt Lake City 10
Sunnyvale 10
Turin 10
Bolzano 9
Chennai 9
Durham 9
Groningen 9
Totale 10.479
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 832
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 323
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 179
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 159
Dynamic SIMS Characterization of Ge1-xSnx alloy 157
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 157
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 148
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 146
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 143
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 140
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 138
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 138
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 137
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 135
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 133
Development of quantum limited superconducting amplifiers for advanced detection 133
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 126
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 124
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 124
Arsenic uphill diffusion during shallow junction formation 123
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 123
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 123
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 121
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 120
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 120
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 120
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 120
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 120
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 119
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 119
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 119
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 118
Detector Array Readout with Traveling Wave Amplifiers 115
Near infra-red light detection enhancement of plasmonic photodetectors 114
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 114
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 114
GIXRF characterization of thin Ge1-xSnx films 114
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 113
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 113
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 112
Hydrogen diffusion in GaAs1−xNx 112
Diffusion and electrical activation of indium in silicon 112
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 111
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 111
ispettiva di sorveglianza 04-05 Luglio 2013 111
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 110
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 109
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 108
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 108
Boron pile-up phenomena during ultra shallow junction formation 107
Investigation on indium diffusion in silicon 107
Vacancy-engineering implants for high boron activation in silicon on insulator 107
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 107
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 105
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 105
Activated dopant effect on low energy SIMS depth profiling 104
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 104
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 103
Boron ultra low energy SIMS depth profiling improved by rotating stage 103
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 102
Characterization of Junction Activation and Deactivation Using non-Equilibrium 102
Nanofabrication of self-organized periodic ripples by ion beam sputtering 102
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 101
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 101
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 101
Shallow NV- colour centres in diamond 100
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 100
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 100
ispettiva di sorveglianza 6-7 giugno 2012. 100
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 98
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 98
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 97
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 96
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 96
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 96
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 96
Ultra low noise readout with traveling wave parametric amplifiers: The DARTWARS project 95
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 95
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 95
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 95
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 95
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 94
Visita ispettiva annuale di sorveglianza Accredia 94
Ultra shallow junction analysis for technology nodes beyond 65nm 94
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 93
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 93
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 93
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 93
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 93
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 92
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 92
Dynamic SIMS Characterization of Ge1-xSnx alloy 92
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 91
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 90
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 90
FIB fabrication of shallow GeV and SiV color centers and solid immersion lenses in diamonds 89
Fabrication of GeV color centers in diamond by Focused Ion Beam 89
Advanced Modelling and Fabrication of Suspended Silicon Nano-Structures Using Multi-Species Focused Ion Beam Implantation 89
Role of the Si/SiO2 interface during dopant diffusion in thin silicon on insulator layers 89
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 89
Totale 11.990
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Categoria #
all - tutte 107.417
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 107.417
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.648 0 13 179 123 180 62 227 18 24 414 116 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.853 96 178 794 237 321 131 193 427 2.330 783 905 458
2025/20261.156 651 505 0 0 0 0 0 0 0 0 0 0
Totale 20.058