IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
EU - Europa 14.957
NA - Nord America 12.580
AS - Asia 7.497
SA - Sud America 1.446
AF - Africa 172
Continente sconosciuto - Info sul continente non disponibili 41
OC - Oceania 27
AN - Antartide 1
Totale 36.721
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Nazione #
US - Stati Uniti d'America 12.195
RU - Federazione Russa 8.037
SG - Singapore 2.622
CN - Cina 1.424
UA - Ucraina 1.358
DE - Germania 1.318
BR - Brasile 1.219
HK - Hong Kong 1.195
VN - Vietnam 934
IT - Italia 824
SE - Svezia 715
FI - Finlandia 549
FR - Francia 528
GB - Regno Unito 466
IN - India 429
IE - Irlanda 292
NL - Olanda 291
CA - Canada 182
JP - Giappone 169
MX - Messico 121
ES - Italia 105
PL - Polonia 99
BD - Bangladesh 94
AR - Argentina 88
KR - Corea 85
BE - Belgio 79
ZA - Sudafrica 68
IQ - Iraq 59
CZ - Repubblica Ceca 56
TR - Turchia 53
IL - Israele 51
AT - Austria 48
IR - Iran 41
CH - Svizzera 40
EU - Europa 40
EE - Estonia 37
SA - Arabia Saudita 36
LT - Lituania 35
PH - Filippine 35
PK - Pakistan 35
AE - Emirati Arabi Uniti 31
EC - Ecuador 28
MA - Marocco 28
TW - Taiwan 24
AU - Australia 23
CO - Colombia 23
VE - Venezuela 23
MY - Malesia 21
UZ - Uzbekistan 21
ID - Indonesia 20
JO - Giordania 20
PY - Paraguay 17
NP - Nepal 15
TN - Tunisia 15
CL - Cile 14
JM - Giamaica 14
KE - Kenya 14
KZ - Kazakistan 14
AZ - Azerbaigian 13
EG - Egitto 13
PE - Perù 12
RS - Serbia 12
BZ - Belize 10
HU - Ungheria 10
PA - Panama 10
UY - Uruguay 10
DO - Repubblica Dominicana 9
OM - Oman 9
LB - Libano 8
SN - Senegal 8
TT - Trinidad e Tobago 8
AL - Albania 7
BO - Bolivia 7
BY - Bielorussia 7
DZ - Algeria 7
ET - Etiopia 7
HN - Honduras 7
CR - Costa Rica 6
KG - Kirghizistan 6
PT - Portogallo 6
RO - Romania 6
MD - Moldavia 5
PS - Palestinian Territory 5
AM - Armenia 4
BA - Bosnia-Erzegovina 4
DK - Danimarca 4
GR - Grecia 4
GY - Guiana 4
LV - Lettonia 4
NI - Nicaragua 4
NZ - Nuova Zelanda 4
SY - Repubblica araba siriana 4
BB - Barbados 3
BH - Bahrain 3
MT - Malta 3
QA - Qatar 3
SK - Slovacchia (Repubblica Slovacca) 3
SV - El Salvador 3
TH - Thailandia 3
BG - Bulgaria 2
Totale 36.684
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Città #
San Jose 1.555
Singapore 1.552
Chandler 1.358
Jacksonville 1.212
Hong Kong 1.133
Ashburn 941
Council Bluffs 696
Moscow 507
Boardman 420
Beijing 419
Dallas 413
The Dalles 369
Wilmington 355
Helsinki 312
Dublin 286
Trento 261
Los Angeles 255
Ho Chi Minh City 252
Hefei 226
New York 207
Santa Clara 197
Ann Arbor 191
Kronberg 189
Hanoi 181
Lauterbourg 181
Dong Ket 172
Munich 169
Dearborn 160
São Paulo 116
Brooklyn 106
Woodbridge 106
Shanghai 103
Frankfurt am Main 89
Phoenix 87
Brussels 79
Seattle 79
Tokyo 78
Pune 76
Warsaw 76
Orem 70
Montreal 65
Houston 57
Southend 57
Amsterdam 56
Mexico City 56
Rome 56
Turku 56
Pergine Valsugana 49
Atlanta 48
Falls Church 47
Secaucus 47
Toronto 45
Brno 44
Denver 44
London 44
Chicago 43
Falkenstein 43
Da Nang 42
Buffalo 41
Rio de Janeiro 41
Poplar 39
Boston 38
Chennai 38
San Mateo 38
Milan 37
Johannesburg 35
St Petersburg 35
Haiphong 33
Augusta 32
Guangzhou 32
Vienna 31
Assago 30
Miami 30
Stockholm 29
Belo Horizonte 28
Manchester 28
Hillsboro 27
San Francisco 27
Mountain View 26
Paris 26
Redwood City 26
Nuremberg 25
Brasília 23
Porto Alegre 23
Turin 22
Verona 22
Ankara 20
Baghdad 20
Portland 19
Amman 18
Hanover 18
Kyiv 18
Mumbai 18
Shenzhen 18
Curitiba 17
Norwalk 17
Ottawa 17
Salvador 17
Tashkent 17
Charlotte 16
Totale 17.245
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 924
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 392
Advanced Modelling and Fabrication of Suspended Silicon Nano-Structures Using Multi-Species Focused Ion Beam Implantation 276
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 274
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 261
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 260
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 259
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 256
Arsenic uphill diffusion during shallow junction formation 250
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 250
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 248
Fabrication of GeV color centers in diamond by Focused Ion Beam 245
Enhancing nanolithography: ion beam lithography with multi-species ion sources for high-resolution patterning 234
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 232
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 231
Dynamic SIMS Characterization of Ge1-xSnx alloy 228
Near infra-red light detection enhancement of plasmonic photodetectors 227
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 227
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 223
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 221
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 220
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 220
Development of quantum limited superconducting amplifiers for advanced detection 220
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 219
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 218
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 217
FIB fabrication of shallow GeV and SiV color centers and solid immersion lenses in diamonds 216
Activated dopant effect on low energy SIMS depth profiling 216
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 216
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 214
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 214
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 214
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 213
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 212
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 211
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 211
Boron pile-up phenomena during ultra shallow junction formation 210
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 210
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 210
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 210
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 209
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 203
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 201
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 200
GIXRF characterization of thin Ge1-xSnx films 200
Detector Array Readout with Traveling Wave Amplifiers 199
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 198
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 198
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 198
Color centers in Diamond 197
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 197
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 196
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 196
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 195
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 193
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 193
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 192
Characterization of Traveling-Wave Josephson Parametric Amplifiers at T = 0.3 K 191
Boron ultra low energy SIMS depth profiling improved by rotating stage 190
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 190
Ultra low noise readout with traveling wave parametric amplifiers: The DARTWARS project 188
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 188
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 187
Vacancy-engineering implants for high boron activation in silicon on insulator 186
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 186
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 186
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 184
ispettiva di sorveglianza 04-05 Luglio 2013 184
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 183
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 182
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 182
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 182
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 180
ispettiva di sorveglianza 6-7 giugno 2012. 180
Shallow NV- colour centres in diamond 176
Nanofabrication of self-organized periodic ripples by ion beam sputtering 176
Hydrogen diffusion in GaAs1−xNx 175
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 174
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 172
Dynamic SIMS Characterization of Ge1-xSnx alloy 172
Diffusion and electrical activation of indium in silicon 172
Cavity magnonics in strong coupling regime – from magnon-polariton hybrid states to perspectives for quantum sensing 171
Investigation on indium diffusion in silicon 171
Complementary metrology within a European joint laboratory 171
Characterization of Junction Activation and Deactivation Using non-Equilibrium 171
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 171
Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons 170
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 170
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 170
Progress in the development of a KITWPA for the DARTWARS project 169
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 168
Ultra shallow junction analysis for technology nodes beyond 65nm 168
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 167
Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam 166
Design and preliminary characterizations of traveling wave parametric amplifiers for DARTWARS 166
Selective ion-assisted nanostructuring process of silicon devices 165
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 164
Plasmonic enhanced photodetectors for near infra-red light detection 164
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 162
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 162
Totale 20.926
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Categoria #
all - tutte 144.412
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 144.412
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021292 0 0 0 0 0 0 0 0 0 0 0 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.853 96 178 794 237 321 131 193 427 2.330 783 905 458
2025/202618.058 651 948 1.109 1.143 764 782 2.605 6.651 1.159 1.207 941 98
Totale 36.960