IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
NA - Nord America 5.907
EU - Europa 4.250
AS - Asia 1.231
Continente sconosciuto - Info sul continente non disponibili 40
OC - Oceania 9
SA - Sud America 7
AF - Africa 5
Totale 11.449
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Nazione #
US - Stati Uniti d'America 5.870
UA - Ucraina 1.323
DE - Germania 725
SE - Svezia 628
FI - Finlandia 383
IT - Italia 332
HK - Hong Kong 301
IE - Irlanda 282
CN - Cina 262
IN - India 246
GB - Regno Unito 214
VN - Vietnam 172
FR - Francia 133
RU - Federazione Russa 67
BE - Belgio 58
KR - Corea 51
JP - Giappone 49
NL - Olanda 45
SG - Singapore 44
EU - Europa 40
IR - Iran 39
IL - Israele 35
CA - Canada 27
AT - Austria 21
CH - Svizzera 15
TW - Taiwan 12
MX - Messico 10
MY - Malesia 10
ES - Italia 9
AU - Australia 7
PL - Polonia 6
BR - Brasile 5
TR - Turchia 5
PT - Portogallo 3
GR - Grecia 2
MA - Marocco 2
NZ - Nuova Zelanda 2
TN - Tunisia 2
AR - Argentina 1
AZ - Azerbaigian 1
EC - Ecuador 1
IQ - Iraq 1
KW - Kuwait 1
LT - Lituania 1
MD - Moldavia 1
OM - Oman 1
PH - Filippine 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
ZW - Zimbabwe 1
Totale 11.449
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Città #
Chandler 1.358
Jacksonville 1.206
Wilmington 355
Ashburn 326
Hong Kong 292
Dublin 280
Helsinki 209
Ann Arbor 191
Kronberg 189
Boardman 188
Dong Ket 172
Dearborn 160
Trento 143
Woodbridge 106
Shanghai 95
Beijing 84
Pune 68
Seattle 68
Phoenix 64
New York 63
Brooklyn 62
Brussels 58
Southend 57
Falls Church 47
Singapore 42
Los Angeles 41
San Mateo 38
Augusta 32
Houston 30
Secaucus 30
Mountain View 26
Redwood City 26
Rome 23
Toronto 23
Amsterdam 22
Vienna 20
Guangzhou 18
Hanover 18
Norwalk 17
Cheyenne 16
St Petersburg 14
Leawood 13
Milan 13
Ardabil 12
Santa Clara 12
Bologna 11
Falkenstein 11
Portland 11
Taipei 11
Hefei 10
Mexico City 10
Saint Petersburg 10
Sunnyvale 10
Bolzano 9
Groningen 9
Paris 9
Tappahannock 9
Wako 9
Zanjan 9
Buffalo 8
Durham 8
Frankfurt am Main 8
Tokyo 8
Gif-sur-yvette 7
Lastra a Signa 7
Redmond 7
Auburn Hills 6
Böblingen 6
Cologne 6
Laion 6
Nanjing 6
Costa Mesa 5
Gloucester 5
Groot-ammers 5
Kajang 5
Moscow 5
San Jose 5
Santa Perpetua de Gaia 5
Verona 5
Basel 4
Cesana Brianza 4
Des Moines 4
Gunzenhausen 4
Lausanne 4
Malakoff 4
North Bergen 4
Otemachi 4
San Bonifacio 4
San Francisco 4
Augsburg 3
Baselga di Pinè 3
Chengdu 3
Elk Grove Village 3
Fairfield 3
Ferrara 3
Fuzhou 3
Gazi 3
Grado 3
Henderson 3
Kepala Batas 3
Totale 6.661
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 799
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 132
Dynamic SIMS Characterization of Ge1-xSnx alloy 108
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 105
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 97
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 96
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 92
Development of quantum limited superconducting amplifiers for advanced detection 92
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 91
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 88
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 88
GIXRF characterization of thin Ge1-xSnx films 80
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 79
Vacancy-engineering implants for high boron activation in silicon on insulator 79
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 79
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 78
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 77
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 77
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 77
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 76
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 75
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 75
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 75
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 74
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 73
Hydrogen diffusion in GaAs1−xNx 72
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 72
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 72
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 72
Investigation on indium diffusion in silicon 71
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 71
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 70
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 70
Characterization of Junction Activation and Deactivation Using non-Equilibrium 70
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 70
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 70
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 70
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 69
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 69
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 69
Arsenic uphill diffusion during shallow junction formation 68
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 68
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 68
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 68
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 68
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 67
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 67
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 66
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 66
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 66
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 66
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 65
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 65
Diffusion and electrical activation of indium in silicon 65
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 65
Nanofabrication of self-organized periodic ripples by ion beam sputtering 65
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 64
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 64
Complementary metrology within a European joint laboratory 63
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 63
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 63
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 63
Ultra shallow junction analysis for technology nodes beyond 65nm 63
Uphill diffusion of ultra-low energy boron implants in preamorphised silicon and SOI 62
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 62
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 62
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 62
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 62
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 62
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 62
Boron pile-up phenomena during ultra shallow junction formation 61
Effect of hydrogen incorporation temperature in in plane -engineered GaAsN/GaAsN:H heterostructures 61
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 61
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 60
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 60
Activated dopant effect on low energy SIMS depth profiling 60
Dynamic SIMS Characterization of Ge1-xSnx alloy 60
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 60
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 59
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 59
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 59
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 59
H-tailored surface conductivity in narrow band gap In(AsN) 59
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 59
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 59
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 58
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 57
Electrical deactivation of ultra shallow arsenic junction formed by laser sub-melt annealing 57
Surface investigation of archeological glasses by secondary ion mass spectrometry 57
Evolution of Arsenic nanometric distributions in Silicon under advanced ion implantation and annealing processes 57
Detector Array Readout with Traveling Wave Amplifiers 57
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 56
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 56
On an improved boron segregation calibration from a particularly sensitive power MOS process 56
Non-melting annealing of silicon by CO2 laser 55
Ultra-Shallow Junction Depth Profiling 55
Sample topography developed by sputtering in a Cameca instruments: an AFM and SEM study 55
ispettiva di sorveglianza 04-05 Luglio 2013 55
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 54
Thermodynamical analysis of abrupt interfaces og InGaP/ GaAs and GaAs/ InGaP heterostructures 54
Totale 7.594
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Categoria #
all - tutte 59.150
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 59.150
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201942 0 0 0 0 0 0 0 0 0 0 32 10
2019/20201.699 178 172 8 10 216 115 219 19 202 234 200 126
2020/20212.601 953 13 179 123 180 62 227 18 24 414 116 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.066 216 118 227 127 169 322 137 250 133 365 2 0
Totale 11.638