IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
NA - Nord America 9.301
EU - Europa 7.810
AS - Asia 5.039
SA - Sud America 1.232
AF - Africa 114
Continente sconosciuto - Info sul continente non disponibili 41
OC - Oceania 17
AN - Antartide 1
Totale 23.555
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Nazione #
US - Stati Uniti d'America 9.045
RU - Federazione Russa 2.028
SG - Singapore 1.890
UA - Ucraina 1.346
BR - Brasile 1.077
DE - Germania 1.022
CN - Cina 1.009
HK - Hong Kong 868
IT - Italia 653
SE - Svezia 653
FI - Finlandia 505
GB - Regno Unito 391
IN - India 361
VN - Vietnam 300
IE - Irlanda 288
NL - Olanda 266
FR - Francia 196
CA - Canada 135
JP - Giappone 122
BE - Belgio 79
KR - Corea 79
MX - Messico 76
PL - Polonia 74
ES - Italia 72
AR - Argentina 65
BD - Bangladesh 62
CZ - Repubblica Ceca 56
IL - Israele 48
ZA - Sudafrica 47
AT - Austria 44
EU - Europa 40
IR - Iran 40
EE - Estonia 37
TR - Turchia 34
IQ - Iraq 33
LT - Lituania 33
PK - Pakistan 26
EC - Ecuador 24
CH - Svizzera 22
SA - Arabia Saudita 22
MA - Marocco 20
TW - Taiwan 20
AE - Emirati Arabi Uniti 19
CO - Colombia 15
UZ - Uzbekistan 15
MY - Malesia 14
VE - Venezuela 14
AU - Australia 13
BZ - Belize 10
KE - Kenya 10
KZ - Kazakistan 10
PY - Paraguay 10
JO - Giordania 9
NP - Nepal 9
PH - Filippine 9
TN - Tunisia 9
JM - Giamaica 8
PE - Perù 8
RS - Serbia 8
EG - Egitto 7
OM - Oman 7
SN - Senegal 7
UY - Uruguay 7
AZ - Azerbaigian 6
PA - Panama 6
AL - Albania 5
BO - Bolivia 5
CL - Cile 5
ID - Indonesia 5
TT - Trinidad e Tobago 5
AM - Armenia 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
ET - Etiopia 4
LB - Libano 4
NZ - Nuova Zelanda 4
BA - Bosnia-Erzegovina 3
BB - Barbados 3
CR - Costa Rica 3
DZ - Algeria 3
HU - Ungheria 3
KG - Kirghizistan 3
LV - Lettonia 3
MT - Malta 3
PT - Portogallo 3
SK - Slovacchia (Repubblica Slovacca) 3
CI - Costa d'Avorio 2
GR - Grecia 2
GY - Guiana 2
HN - Honduras 2
HR - Croazia 2
KW - Kuwait 2
LA - Repubblica Popolare Democratica del Laos 2
MD - Moldavia 2
PS - Palestinian Territory 2
RO - Romania 2
SV - El Salvador 2
TH - Thailandia 2
AO - Angola 1
AQ - Antartide 1
Totale 23.543
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Città #
Chandler 1.358
Singapore 1.290
Jacksonville 1.207
Hong Kong 849
Ashburn 725
Moscow 504
Boardman 416
Dallas 403
Wilmington 355
Beijing 349
The Dalles 317
Dublin 284
Helsinki 269
Trento 256
Hefei 225
Ann Arbor 191
Kronberg 189
Dong Ket 172
New York 170
Los Angeles 168
Munich 167
Santa Clara 161
Dearborn 160
Woodbridge 106
Brooklyn 102
Shanghai 100
São Paulo 100
Phoenix 82
Brussels 79
Seattle 76
Pune 75
Tokyo 60
Warsaw 60
Southend 57
Turku 56
Falls Church 47
Houston 47
Montreal 47
Rome 47
Secaucus 45
Brno 44
Amsterdam 43
Ho Chi Minh City 42
Atlanta 41
Orem 40
Rio de Janeiro 40
Mexico City 38
San Mateo 38
Falkenstein 37
Toronto 37
Boston 36
Denver 36
St Petersburg 34
Chicago 33
London 33
Poplar 33
Augusta 32
Hanoi 32
Vienna 31
Assago 30
Chennai 30
Frankfurt am Main 30
Belo Horizonte 28
Milan 28
Buffalo 26
Mountain View 26
Redwood City 26
Stockholm 26
Johannesburg 25
San Francisco 25
Miami 24
Guangzhou 23
Brasília 21
Hanover 18
Manchester 18
Norwalk 17
Nuremberg 17
Porto Alegre 17
San Jose 17
Cheyenne 16
Curitiba 15
Ottawa 15
Salvador 15
Taipei 15
Ankara 14
Council Bluffs 14
Hillsboro 14
Mumbai 14
Portland 14
Tashkent 14
Bologna 13
Kyiv 13
Leawood 13
Tianjin 13
Verona 13
Ardabil 12
Charlotte 12
Guarulhos 12
Jeddah 11
Pisa 11
Totale 12.826
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 851
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 330
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 204
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 188
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 187
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 179
Dynamic SIMS Characterization of Ge1-xSnx alloy 177
Arsenic uphill diffusion during shallow junction formation 174
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 171
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 167
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 164
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 162
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 162
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 159
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 157
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 157
Advanced Modelling and Fabrication of Suspended Silicon Nano-Structures Using Multi-Species Focused Ion Beam Implantation 156
Development of quantum limited superconducting amplifiers for advanced detection 154
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 150
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 149
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 147
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 145
Near infra-red light detection enhancement of plasmonic photodetectors 143
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 143
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 143
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 142
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 141
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 140
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 140
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 140
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 139
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 139
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 139
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 138
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 138
Activated dopant effect on low energy SIMS depth profiling 138
GIXRF characterization of thin Ge1-xSnx films 138
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 138
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 137
Detector Array Readout with Traveling Wave Amplifiers 137
Fabrication of GeV color centers in diamond by Focused Ion Beam 136
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 136
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 135
Boron pile-up phenomena during ultra shallow junction formation 134
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 134
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 133
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 133
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 132
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 131
Boron ultra low energy SIMS depth profiling improved by rotating stage 131
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 130
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 128
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 128
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 128
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 127
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 127
FIB fabrication of shallow GeV and SiV color centers and solid immersion lenses in diamonds 126
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 126
Hydrogen diffusion in GaAs1−xNx 125
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 125
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 125
ispettiva di sorveglianza 04-05 Luglio 2013 124
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 123
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 123
Nanofabrication of self-organized periodic ripples by ion beam sputtering 123
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 122
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 122
Investigation on indium diffusion in silicon 120
Diffusion and electrical activation of indium in silicon 120
Vacancy-engineering implants for high boron activation in silicon on insulator 119
Characterization of Junction Activation and Deactivation Using non-Equilibrium 119
Shallow NV- colour centres in diamond 118
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 118
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 117
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 117
ispettiva di sorveglianza 6-7 giugno 2012. 115
Characterization of Traveling-Wave Josephson Parametric Amplifiers at T = 0.3 K 114
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 113
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 113
Ultra low noise readout with traveling wave parametric amplifiers: The DARTWARS project 112
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 112
Color centers in Diamond 111
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 111
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 111
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 111
Complementary metrology within a European joint laboratory 110
Dynamic SIMS Characterization of Ge1-xSnx alloy 110
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 109
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 107
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 107
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 107
Design and preliminary characterizations of traveling wave parametric amplifiers for DARTWARS 107
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 106
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 106
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 106
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 106
Ultra shallow junction analysis for technology nodes beyond 65nm 105
Cavity magnonics in strong coupling regime – from magnon-polariton hybrid states to perspectives for quantum sensing 104
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 104
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 103
Totale 14.138
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Categoria #
all - tutte 119.568
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 119.568
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.153 0 0 0 0 0 62 227 18 24 414 116 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.853 96 178 794 237 321 131 193 427 2.330 783 905 458
2025/20264.863 651 948 1.109 1.143 764 248 0 0 0 0 0 0
Totale 23.765