IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
EU - Europa 14.835
NA - Nord America 11.538
AS - Asia 7.378
SA - Sud America 1.443
AF - Africa 172
Continente sconosciuto - Info sul continente non disponibili 41
OC - Oceania 26
AN - Antartide 1
Totale 35.434
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Nazione #
US - Stati Uniti d'America 11.188
RU - Federazione Russa 8.037
SG - Singapore 2.586
CN - Cina 1.377
UA - Ucraina 1.358
DE - Germania 1.314
BR - Brasile 1.217
HK - Hong Kong 1.185
VN - Vietnam 929
IT - Italia 779
SE - Svezia 662
FI - Finlandia 549
FR - Francia 526
GB - Regno Unito 461
IN - India 426
IE - Irlanda 292
NL - Olanda 284
CA - Canada 168
JP - Giappone 157
MX - Messico 112
ES - Italia 104
PL - Polonia 99
BD - Bangladesh 92
AR - Argentina 87
KR - Corea 84
BE - Belgio 79
ZA - Sudafrica 68
IQ - Iraq 59
CZ - Repubblica Ceca 56
TR - Turchia 53
IL - Israele 51
AT - Austria 48
IR - Iran 41
CH - Svizzera 40
EU - Europa 40
EE - Estonia 37
SA - Arabia Saudita 36
LT - Lituania 35
PH - Filippine 35
PK - Pakistan 35
AE - Emirati Arabi Uniti 30
EC - Ecuador 28
MA - Marocco 28
CO - Colombia 23
TW - Taiwan 23
VE - Venezuela 23
AU - Australia 22
MY - Malesia 21
UZ - Uzbekistan 21
ID - Indonesia 20
JO - Giordania 20
PY - Paraguay 17
NP - Nepal 15
TN - Tunisia 15
CL - Cile 14
KE - Kenya 14
KZ - Kazakistan 14
AZ - Azerbaigian 13
EG - Egitto 13
JM - Giamaica 13
PE - Perù 12
RS - Serbia 12
BZ - Belize 10
PA - Panama 10
UY - Uruguay 10
DO - Repubblica Dominicana 9
OM - Oman 9
LB - Libano 8
SN - Senegal 8
AL - Albania 7
BO - Bolivia 7
BY - Bielorussia 7
DZ - Algeria 7
ET - Etiopia 7
HU - Ungheria 6
KG - Kirghizistan 6
RO - Romania 6
CR - Costa Rica 5
HN - Honduras 5
MD - Moldavia 5
PS - Palestinian Territory 5
PT - Portogallo 5
TT - Trinidad e Tobago 5
AM - Armenia 4
BA - Bosnia-Erzegovina 4
DK - Danimarca 4
GR - Grecia 4
GY - Guiana 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
SY - Repubblica araba siriana 4
BB - Barbados 3
BH - Bahrain 3
MT - Malta 3
SK - Slovacchia (Repubblica Slovacca) 3
SV - El Salvador 3
TH - Thailandia 3
BG - Bulgaria 2
CI - Costa d'Avorio 2
GE - Georgia 2
Totale 35.400
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Città #
Singapore 1.546
San Jose 1.380
Chandler 1.358
Jacksonville 1.212
Hong Kong 1.125
Ashburn 924
Moscow 507
Boardman 420
Beijing 407
Dallas 406
The Dalles 369
Wilmington 355
Helsinki 312
Dublin 286
Trento 257
Ho Chi Minh City 249
Los Angeles 248
Hefei 226
New York 194
Ann Arbor 191
Kronberg 189
Hanoi 181
Lauterbourg 181
Santa Clara 180
Dong Ket 172
Munich 169
Dearborn 160
São Paulo 116
Woodbridge 106
Brooklyn 104
Shanghai 103
Frankfurt am Main 89
Phoenix 86
Brussels 79
Seattle 78
Pune 76
Tokyo 76
Warsaw 76
Orem 68
Montreal 61
Southend 57
Amsterdam 56
Turku 56
Houston 53
Rome 52
Pergine Valsugana 49
Atlanta 47
Falls Church 47
Mexico City 47
Secaucus 46
Council Bluffs 45
Brno 44
Falkenstein 43
London 43
Da Nang 42
Denver 42
Toronto 42
Rio de Janeiro 41
Chicago 40
Poplar 39
Chennai 38
San Mateo 38
Boston 37
Buffalo 35
Johannesburg 35
Milan 35
St Petersburg 35
Haiphong 33
Augusta 32
Guangzhou 32
Vienna 31
Assago 30
Miami 30
Stockholm 29
Belo Horizonte 28
Manchester 28
Hillsboro 26
Mountain View 26
Paris 26
Redwood City 26
San Francisco 26
Nuremberg 25
Brasília 23
Porto Alegre 23
Turin 21
Ankara 20
Baghdad 20
Portland 19
Verona 19
Amman 18
Hanover 18
Kyiv 18
Mumbai 18
Shenzhen 18
Curitiba 17
Norwalk 17
Salvador 17
Tashkent 17
Cheyenne 16
Ottawa 16
Totale 16.269
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 920
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 388
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 268
Advanced Modelling and Fabrication of Suspended Silicon Nano-Structures Using Multi-Species Focused Ion Beam Implantation 264
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 255
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 254
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 253
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 247
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 246
Arsenic uphill diffusion during shallow junction formation 243
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 243
Fabrication of GeV color centers in diamond by Focused Ion Beam 234
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 226
Enhancing nanolithography: ion beam lithography with multi-species ion sources for high-resolution patterning 223
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 223
Dynamic SIMS Characterization of Ge1-xSnx alloy 222
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 220
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 220
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 217
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 215
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 215
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 214
Development of quantum limited superconducting amplifiers for advanced detection 214
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 213
Near infra-red light detection enhancement of plasmonic photodetectors 212
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 212
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 212
Activated dopant effect on low energy SIMS depth profiling 211
FIB fabrication of shallow GeV and SiV color centers and solid immersion lenses in diamonds 209
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 209
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 209
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 209
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 208
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 207
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 207
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 207
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 206
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 205
Boron pile-up phenomena during ultra shallow junction formation 204
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 204
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 203
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 195
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 195
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 195
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 194
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 194
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 194
Detector Array Readout with Traveling Wave Amplifiers 194
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 193
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 193
GIXRF characterization of thin Ge1-xSnx films 193
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 191
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 190
Color centers in Diamond 189
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 189
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 188
Boron ultra low energy SIMS depth profiling improved by rotating stage 185
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 185
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 184
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 183
Characterization of Traveling-Wave Josephson Parametric Amplifiers at T = 0.3 K 182
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 182
Vacancy-engineering implants for high boron activation in silicon on insulator 182
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 182
Ultra low noise readout with traveling wave parametric amplifiers: The DARTWARS project 180
ispettiva di sorveglianza 04-05 Luglio 2013 179
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 178
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 178
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 176
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 176
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 176
ispettiva di sorveglianza 6-7 giugno 2012. 175
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 174
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 173
Hydrogen diffusion in GaAs1−xNx 171
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 171
Diffusion and electrical activation of indium in silicon 171
Shallow NV- colour centres in diamond 170
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 168
Characterization of Junction Activation and Deactivation Using non-Equilibrium 168
Nanofabrication of self-organized periodic ripples by ion beam sputtering 168
Investigation on indium diffusion in silicon 167
Dynamic SIMS Characterization of Ge1-xSnx alloy 167
Cavity magnonics in strong coupling regime – from magnon-polariton hybrid states to perspectives for quantum sensing 166
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 165
Complementary metrology within a European joint laboratory 165
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 165
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 165
Ultra shallow junction analysis for technology nodes beyond 65nm 165
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 163
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 163
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 162
Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons 161
Selective ion-assisted nanostructuring process of silicon devices 161
Design and preliminary characterizations of traveling wave parametric amplifiers for DARTWARS 161
Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam 160
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 160
Progress in the development of a KITWPA for the DARTWARS project 158
Plasmonic enhanced photodetectors for near infra-red light detection 158
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 157
Totale 20.364
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Categoria #
all - tutte 136.590
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 136.590
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021822 0 0 0 0 0 0 0 0 0 414 116 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.853 96 178 794 237 321 131 193 427 2.330 783 905 458
2025/202616.771 651 948 1.109 1.143 764 782 2.605 6.651 1.159 959 0 0
Totale 35.673