IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
NA - Nord America 7.250
EU - Europa 7.051
AS - Asia 2.956
SA - Sud America 508
AF - Africa 42
Continente sconosciuto - Info sul continente non disponibili 40
OC - Oceania 17
Totale 17.864
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Nazione #
US - Stati Uniti d'America 7.137
RU - Federazione Russa 1.989
UA - Ucraina 1.327
SG - Singapore 1.026
DE - Germania 903
HK - Hong Kong 774
SE - Svezia 634
IT - Italia 484
BR - Brasile 474
FI - Finlandia 465
CN - Cina 365
IE - Irlanda 285
IN - India 271
GB - Regno Unito 256
NL - Olanda 250
VN - Vietnam 174
FR - Francia 149
BE - Belgio 79
JP - Giappone 76
CA - Canada 68
KR - Corea 67
CZ - Repubblica Ceca 53
IL - Israele 42
EU - Europa 40
IR - Iran 39
EE - Estonia 37
AT - Austria 35
ES - Italia 29
MX - Messico 25
LT - Lituania 17
BD - Bangladesh 16
CH - Svizzera 16
TW - Taiwan 16
AR - Argentina 13
AU - Australia 13
MA - Marocco 13
IQ - Iraq 12
PK - Pakistan 11
PL - Polonia 11
BZ - Belize 10
MY - Malesia 10
TR - Turchia 9
ZA - Sudafrica 8
RS - Serbia 7
EC - Ecuador 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
PA - Panama 5
PH - Filippine 5
AM - Armenia 4
AZ - Azerbaigian 4
CO - Colombia 4
JO - Giordania 4
KE - Kenya 4
NP - Nepal 4
NZ - Nuova Zelanda 4
SN - Senegal 4
TN - Tunisia 4
AL - Albania 3
KG - Kirghizistan 3
KZ - Kazakistan 3
LV - Lettonia 3
PT - Portogallo 3
PY - Paraguay 3
SK - Slovacchia (Repubblica Slovacca) 3
VE - Venezuela 3
BO - Bolivia 2
BY - Bielorussia 2
CI - Costa d'Avorio 2
EG - Egitto 2
GR - Grecia 2
HR - Croazia 2
HU - Ungheria 2
JM - Giamaica 2
LA - Repubblica Popolare Democratica del Laos 2
MD - Moldavia 2
TH - Thailandia 2
BA - Bosnia-Erzegovina 1
CL - Cile 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
ID - Indonesia 1
KW - Kuwait 1
LU - Lussemburgo 1
NG - Nigeria 1
OM - Oman 1
PE - Perù 1
PS - Palestinian Territory 1
RO - Romania 1
SA - Arabia Saudita 1
SV - El Salvador 1
TG - Togo 1
UY - Uruguay 1
ZW - Zimbabwe 1
Totale 17.864
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Città #
Chandler 1.358
Jacksonville 1.206
Hong Kong 759
Singapore 665
Moscow 501
Boardman 374
Ashburn 365
Wilmington 355
Dublin 283
The Dalles 282
Helsinki 266
Ann Arbor 191
Kronberg 189
Trento 174
Dong Ket 172
Dearborn 160
Santa Clara 135
Woodbridge 106
Shanghai 100
Beijing 96
Brussels 79
Los Angeles 74
Munich 74
New York 74
Pune 71
Seattle 69
Brooklyn 68
Phoenix 64
Southend 57
Falls Church 47
Brno 44
San Mateo 38
Falkenstein 37
Amsterdam 36
Toronto 36
São Paulo 34
Rome 33
Secaucus 33
Augusta 32
Houston 30
Vienna 28
Mountain View 26
Redwood City 26
Tokyo 25
Frankfurt am Main 24
Milan 24
Miami 22
Guangzhou 20
London 19
Turku 19
Hanover 18
Buffalo 17
Mexico City 17
Norwalk 17
St Petersburg 17
Belo Horizonte 16
Cheyenne 16
Ottawa 15
Rio de Janeiro 15
Assago 14
Nuremberg 14
Bologna 13
Leawood 13
San Francisco 13
Ardabil 12
Taipei 12
Hefei 11
Pisa 11
Portland 11
Saint Petersburg 10
San Jose 10
Sunnyvale 10
Verona 10
Bolzano 9
Groningen 9
Paris 9
Salvador 9
Tappahannock 9
Wako 9
Zanjan 9
Durham 8
Olomouc 8
Porto Alegre 8
Atlanta 7
Charlotte 7
Chennai 7
Council Bluffs 7
Espoo 7
Gif-sur-yvette 7
Lastra a Signa 7
Melbourne 7
Montreal 7
Redmond 7
Stockholm 7
Tel Aviv 7
Auburn Hills 6
Besançon 6
Brasília 6
Böblingen 6
Cologne 6
Totale 9.513
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 826
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 307
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 171
Dynamic SIMS Characterization of Ge1-xSnx alloy 144
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 136
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 136
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 132
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 129
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 128
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 128
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 127
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 126
Development of quantum limited superconducting amplifiers for advanced detection 125
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 120
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 118
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 118
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 118
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 118
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 117
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 116
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 115
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 113
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 112
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 112
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 111
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 109
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 109
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 109
Arsenic uphill diffusion during shallow junction formation 106
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 106
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 106
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 105
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 105
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 105
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 105
Diffusion and electrical activation of indium in silicon 104
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 104
ispettiva di sorveglianza 04-05 Luglio 2013 104
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 103
GIXRF characterization of thin Ge1-xSnx films 103
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 103
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 103
Near infra-red light detection enhancement of plasmonic photodetectors 102
Hydrogen diffusion in GaAs1−xNx 102
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 102
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 101
Detector Array Readout with Traveling Wave Amplifiers 100
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 99
Characterization of Junction Activation and Deactivation Using non-Equilibrium 99
Investigation on indium diffusion in silicon 98
Vacancy-engineering implants for high boron activation in silicon on insulator 98
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 98
Nanofabrication of self-organized periodic ripples by ion beam sputtering 98
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 96
Boron pile-up phenomena during ultra shallow junction formation 95
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 95
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 95
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 95
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 94
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 94
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 93
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 92
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 91
ispettiva di sorveglianza 6-7 giugno 2012. 91
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process 90
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques 90
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 90
Activated dopant effect on low energy SIMS depth profiling 90
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 90
Ultra shallow junctions: Analytical solutions for 90 nm technology node" 89
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 89
Rotating stage and shallow depth profiling on Cameca SC-Ultra apparatus 89
Short-term and long-term RSF repeatability for CAMECA SC-Ultra SIMS measurements 88
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 88
Dynamic SIMS Characterization of Ge1-xSnx alloy 88
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 88
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 87
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 87
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation. 87
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry 87
Boron ultra low energy SIMS depth profiling improved by rotating stage 87
Ultra shallow junction analysis for technology nodes beyond 65nm 87
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 86
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 86
Complementary metrology within a European joint laboratory 85
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 85
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 84
Shallow NV- colour centres in diamond 84
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 84
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 84
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 83
Visita ispettiva annuale di sorveglianza Accredia 82
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam 81
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses 81
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 81
Uphill diffusion of ultra-low energy boron implants in preamorphised silicon and SOI 80
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 80
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 80
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 80
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 79
Totale 10.996
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Categoria #
all - tutte 98.404
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 98.404
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020326 0 0 0 0 0 0 0 0 0 0 200 126
2020/20212.601 953 13 179 123 180 62 227 18 24 414 116 292
2021/20221.043 40 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.020 96 178 794 237 321 131 193 427 2.330 783 530 0
Totale 18.069