IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
EU - Europa 15.117
NA - Nord America 13.935
AS - Asia 7.546
SA - Sud America 1.467
Continente sconosciuto - Info sul continente non disponibili 281
AF - Africa 173
OC - Oceania 47
AN - Antartide 1
Totale 38.567
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Nazione #
US - Stati Uniti d'America 13.513
RU - Federazione Russa 8.037
SG - Singapore 2.627
CN - Cina 1.449
UA - Ucraina 1.358
DE - Germania 1.337
BR - Brasile 1.228
HK - Hong Kong 1.198
VN - Vietnam 938
IT - Italia 871
SE - Svezia 780
FI - Finlandia 549
FR - Francia 532
GB - Regno Unito 469
IN - India 431
IE - Irlanda 293
NL - Olanda 292
CA - Canada 205
JP - Giappone 170
MX - Messico 125
ES - Italia 107
PL - Polonia 99
BD - Bangladesh 97
AR - Argentina 91
KR - Corea 85
BE - Belgio 80
ZA - Sudafrica 68
CZ - Repubblica Ceca 59
IQ - Iraq 59
TR - Turchia 53
AT - Austria 52
IL - Israele 51
AU - Australia 43
CH - Svizzera 41
IR - Iran 41
EU - Europa 40
EE - Estonia 38
SA - Arabia Saudita 36
LT - Lituania 35
PH - Filippine 35
PK - Pakistan 35
AE - Emirati Arabi Uniti 31
EC - Ecuador 31
MA - Marocco 28
CO - Colombia 27
MY - Malesia 24
TW - Taiwan 24
VE - Venezuela 23
UZ - Uzbekistan 21
ID - Indonesia 20
JO - Giordania 20
PY - Paraguay 17
CL - Cile 16
NP - Nepal 15
TN - Tunisia 15
JM - Giamaica 14
KE - Kenya 14
KZ - Kazakistan 14
AZ - Azerbaigian 13
EG - Egitto 13
RS - Serbia 13
PE - Perù 12
BZ - Belize 10
HU - Ungheria 10
PA - Panama 10
UY - Uruguay 10
DO - Repubblica Dominicana 9
OM - Oman 9
TT - Trinidad e Tobago 9
AL - Albania 8
CR - Costa Rica 8
LB - Libano 8
PT - Portogallo 8
RO - Romania 8
SN - Senegal 8
BO - Bolivia 7
BY - Bielorussia 7
DZ - Algeria 7
ET - Etiopia 7
HN - Honduras 7
KG - Kirghizistan 6
NI - Nicaragua 6
GR - Grecia 5
MD - Moldavia 5
PS - Palestinian Territory 5
TH - Thailandia 5
AM - Armenia 4
BA - Bosnia-Erzegovina 4
DK - Danimarca 4
GY - Guiana 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
SV - El Salvador 4
SY - Repubblica araba siriana 4
BB - Barbados 3
BH - Bahrain 3
GT - Guatemala 3
MT - Malta 3
QA - Qatar 3
SK - Slovacchia (Repubblica Slovacca) 3
Totale 38.284
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Città #
Council Bluffs 1.599
San Jose 1.574
Singapore 1.556
Chandler 1.358
Jacksonville 1.215
Hong Kong 1.135
Ashburn 960
Moscow 508
Beijing 429
Dallas 422
Boardman 420
The Dalles 370
Wilmington 358
Helsinki 312
Dublin 286
Trento 271
Los Angeles 265
Ho Chi Minh City 255
Hefei 226
Santa Clara 218
New York 214
Ann Arbor 191
Kronberg 189
Hanoi 182
Lauterbourg 181
Dong Ket 172
Munich 170
Dearborn 160
São Paulo 118
Phoenix 116
Brooklyn 107
Woodbridge 106
Shanghai 104
Frankfurt am Main 90
Seattle 83
Brussels 79
Tokyo 78
Pune 76
Warsaw 76
Orem 70
Montreal 65
Houston 58
Mexico City 58
Rome 58
Southend 57
Amsterdam 56
Turku 56
Atlanta 53
Buffalo 49
Pergine Valsugana 49
Toronto 49
Chicago 48
Falls Church 47
Secaucus 47
Brno 44
Denver 44
London 44
Falkenstein 43
Da Nang 42
Milan 42
Rio de Janeiro 42
Poplar 39
Boston 38
Chennai 38
San Mateo 38
Johannesburg 35
St Petersburg 35
Vienna 35
Haiphong 33
Augusta 32
Guangzhou 32
Assago 30
Melbourne 30
Miami 30
Stockholm 29
Belo Horizonte 28
Manchester 28
San Francisco 28
Hillsboro 27
Mountain View 26
Paris 26
Redwood City 26
Nuremberg 25
Brasília 24
Turin 24
Porto Alegre 23
Verona 22
Ankara 20
Baghdad 20
Mumbai 19
Portland 19
Amman 18
Hanover 18
Kyiv 18
Salt Lake City 18
Shenzhen 18
Curitiba 17
Norwalk 17
Ottawa 17
Salvador 17
Totale 18.367
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 931
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 396
Advanced Modelling and Fabrication of Suspended Silicon Nano-Structures Using Multi-Species Focused Ion Beam Implantation 296
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 280
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 271
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 267
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 266
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 263
Arsenic uphill diffusion during shallow junction formation 258
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 257
Enhancing nanolithography: ion beam lithography with multi-species ion sources for high-resolution patterning 255
Fabrication of GeV color centers in diamond by Focused Ion Beam 255
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 255
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 242
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 240
Dynamic SIMS Characterization of Ge1-xSnx alloy 238
Near infra-red light detection enhancement of plasmonic photodetectors 237
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 234
FIB fabrication of shallow GeV and SiV color centers and solid immersion lenses in diamonds 232
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 232
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 230
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 227
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 226
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 225
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 224
Development of quantum limited superconducting amplifiers for advanced detection 224
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 222
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 221
Activated dopant effect on low energy SIMS depth profiling 221
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 221
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 220
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 219
Boron pile-up phenomena during ultra shallow junction formation 219
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 219
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 219
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 218
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 218
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 217
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 217
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 216
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 214
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 211
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 208
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 207
GIXRF characterization of thin Ge1-xSnx films 207
Color centers in Diamond 205
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 205
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 204
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 204
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 203
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 203
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 203
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 203
Detector Array Readout with Traveling Wave Amplifiers 203
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 202
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 201
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 200
Characterization of Traveling-Wave Josephson Parametric Amplifiers at T = 0.3 K 199
Ultra low noise readout with traveling wave parametric amplifiers: The DARTWARS project 199
Boron ultra low energy SIMS depth profiling improved by rotating stage 197
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 197
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 195
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 194
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 193
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 192
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 191
Vacancy-engineering implants for high boron activation in silicon on insulator 190
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 190
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 189
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 189
ispettiva di sorveglianza 04-05 Luglio 2013 188
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 188
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 186
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 184
ispettiva di sorveglianza 6-7 giugno 2012. 183
Shallow NV- colour centres in diamond 182
Hydrogen diffusion in GaAs1−xNx 182
Nanofabrication of self-organized periodic ripples by ion beam sputtering 181
Conductive graphitic layers induced in diamond by multi-species focused ion beam 179
Dynamic SIMS Characterization of Ge1-xSnx alloy 179
Complementary metrology within a European joint laboratory 178
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 178
Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons 177
Characterization of Junction Activation and Deactivation Using non-Equilibrium 177
Diffusion and electrical activation of indium in silicon 177
Progress in the development of a KITWPA for the DARTWARS project 176
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 175
Investigation on indium diffusion in silicon 175
Cavity magnonics in strong coupling regime – from magnon-polariton hybrid states to perspectives for quantum sensing 174
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 174
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 174
Ultra shallow junction analysis for technology nodes beyond 65nm 174
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 173
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 172
Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam 171
Modeling of Josephson Traveling Wave Parametric Amplifiers 170
Plasmonic enhanced photodetectors for near infra-red light detection 170
Selective ion-assisted nanostructuring process of silicon devices 169
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 169
Design and preliminary characterizations of traveling wave parametric amplifiers for DARTWARS 169
Totale 21.630
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Categoria #
all - tutte 151.694
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 151.694
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.003 0 17 9 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.853 96 178 794 237 321 131 193 427 2.330 783 905 458
2025/202618.222 651 948 1.109 1.143 764 782 2.605 6.651 1.159 1.207 941 262
2026/20271.443 931 512 0 0 0 0 0 0 0 0 0 0
Totale 38.567