IRIS Institutional Research Information System

Giubertoni, Damiano
 Distribuzione geografica
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Continente #
NA - Nord America 16.611
EU - Europa 15.346
AS - Asia 7.606
SA - Sud America 1.500
Continente sconosciuto - Info sul continente non disponibili 284
AF - Africa 185
OC - Oceania 49
AN - Antartide 1
Totale 41.582
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Nazione #
US - Stati Uniti d'America 16.046
RU - Federazione Russa 8.042
SG - Singapore 2.638
CN - Cina 1.459
DE - Germania 1.382
UA - Ucraina 1.359
BR - Brasile 1.243
HK - Hong Kong 1.210
IT - Italia 968
VN - Vietnam 939
SE - Svezia 803
FI - Finlandia 549
FR - Francia 540
GB - Regno Unito 496
IN - India 431
NL - Olanda 294
IE - Irlanda 293
CA - Canada 279
JP - Giappone 175
MX - Messico 127
ES - Italia 112
BD - Bangladesh 102
PL - Polonia 100
AR - Argentina 96
KR - Corea 85
BE - Belgio 80
ZA - Sudafrica 68
CZ - Repubblica Ceca 59
IQ - Iraq 59
TR - Turchia 53
AT - Austria 52
IL - Israele 52
AU - Australia 45
CH - Svizzera 44
IR - Iran 41
LT - Lituania 41
EE - Estonia 40
EU - Europa 40
PH - Filippine 37
PK - Pakistan 36
SA - Arabia Saudita 36
EC - Ecuador 35
AE - Emirati Arabi Uniti 32
CO - Colombia 30
MA - Marocco 29
MY - Malesia 26
VE - Venezuela 25
CR - Costa Rica 24
TW - Taiwan 24
UZ - Uzbekistan 22
ID - Indonesia 20
JO - Giordania 20
GT - Guatemala 18
HN - Honduras 18
CL - Cile 17
PY - Paraguay 17
JM - Giamaica 16
NP - Nepal 15
TN - Tunisia 15
KE - Kenya 14
KZ - Kazakistan 14
PE - Perù 14
TT - Trinidad e Tobago 14
AZ - Azerbaigian 13
EG - Egitto 13
RS - Serbia 13
NI - Nicaragua 12
SC - Seychelles 12
UY - Uruguay 11
BZ - Belize 10
HU - Ungheria 10
LB - Libano 10
PA - Panama 10
DO - Repubblica Dominicana 9
OM - Oman 9
PT - Portogallo 9
AL - Albania 8
RO - Romania 8
SN - Senegal 8
SV - El Salvador 8
BO - Bolivia 7
BY - Bielorussia 7
DZ - Algeria 7
ET - Etiopia 7
TH - Thailandia 7
DK - Danimarca 6
KG - Kirghizistan 6
PS - Palestinian Territory 6
AM - Armenia 5
GR - Grecia 5
MD - Moldavia 5
BA - Bosnia-Erzegovina 4
CW - ???statistics.table.value.countryCode.CW??? 4
GP - Guadalupe 4
GY - Guiana 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
SY - Repubblica araba siriana 4
BB - Barbados 3
BH - Bahrain 3
Totale 41.285
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Città #
San Jose 1.796
Council Bluffs 1.599
Singapore 1.564
Chandler 1.358
Jacksonville 1.220
Hong Kong 1.139
Ashburn 1.023
Moscow 508
Dallas 453
Beijing 433
Boardman 420
The Dalles 372
Wilmington 364
Los Angeles 326
Helsinki 312
Dublin 286
Trento 275
New York 269
Ho Chi Minh City 256
Santa Clara 252
Hefei 226
Ann Arbor 191
Munich 191
Kronberg 189
Hanoi 182
Lauterbourg 181
Dong Ket 172
Dearborn 160
Buffalo 144
Phoenix 143
Brooklyn 125
São Paulo 120
Woodbridge 106
Shanghai 104
Frankfurt am Main 91
Seattle 89
Tokyo 83
Brussels 79
Chicago 79
Warsaw 77
Houston 76
Pune 76
Montreal 74
Orem 70
Rome 67
Atlanta 64
Mexico City 59
Toronto 58
Amsterdam 57
Southend 57
Turku 56
Denver 51
Tampa 51
Pergine Valsugana 49
Secaucus 48
Falls Church 47
Milan 47
Boston 46
London 45
Brno 44
Falkenstein 43
Da Nang 42
Rio de Janeiro 42
North Bergen 41
Miami 40
North Easton 39
Poplar 39
Chennai 38
Garland 38
San Francisco 38
San Mateo 38
Johannesburg 35
St Petersburg 35
Vienna 35
Haiphong 33
Augusta 32
Guangzhou 32
Queens 32
Assago 30
Melbourne 30
Lawrenceville 29
Manchester 29
Stockholm 29
Belo Horizonte 28
Hillsboro 28
Brasília 27
Paris 27
Mountain View 26
Philadelphia 26
Redwood City 26
Turin 26
Charlotte 25
Nuremberg 25
Portland 24
Orlando 23
Porto Alegre 23
Salt Lake City 23
Verona 22
Norwalk 21
Ankara 20
Totale 19.338
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 945
X-ray Photoelectron Spectroscopy of Nitrided Silicon-Silicon Oxide Interface 407
Advanced Modelling and Fabrication of Suspended Silicon Nano-Structures Using Multi-Species Focused Ion Beam Implantation 313
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 301
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides 283
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione 280
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 280
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 280
Fabrication of GeV color centers in diamond by Focused Ion Beam 277
Arsenic uphill diffusion during shallow junction formation 275
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage 274
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 272
Enhancing nanolithography: ion beam lithography with multi-species ion sources for high-resolution patterning 269
Using a liquid metal alloy ion source for FIB patterning of noble metal plasmonic nanostructures 256
Near infra-red light detection enhancement of plasmonic photodetectors 255
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques 254
FIB fabrication of shallow GeV and SiV color centers and solid immersion lenses in diamonds 251
Dynamic SIMS Characterization of Ge1-xSnx alloy 250
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 248
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 245
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 242
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 241
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 240
Dynamic SIMS Application for Characterization of Advanced Doping Schemes in Semiconductors 239
Activated dopant effect on low energy SIMS depth profiling 238
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 238
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments 237
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 236
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 236
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses 236
Development of quantum limited superconducting amplifiers for advanced detection 236
Boron pile-up phenomena during ultra shallow junction formation 235
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 232
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 232
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 231
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon 231
D-Sims and TOF-SIMS quantitative depth profiles on ultra thin oxinitrides 231
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 230
Nano Hotplate Fabrication by Combining EBL and FIB Techniques 230
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 229
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 227
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 227
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack 225
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 225
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 221
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 220
GIXRF characterization of thin Ge1-xSnx films 220
Color centers in Diamond 218
Focused gold ion beam for the fabrication of sub-100 nm length InGaZnO thin film transistors on flexible substrates 217
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants" 216
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 216
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 215
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab 215
Detector Array Readout with Traveling Wave Amplifiers 215
Characterization of Traveling-Wave Josephson Parametric Amplifiers at T = 0.3 K 214
Ultra low noise readout with traveling wave parametric amplifiers: The DARTWARS project 214
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants 214
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon 214
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 214
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 213
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 212
Boron ultra low energy SIMS depth profiling improved by rotating stage 212
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 206
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 205
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface 205
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam 204
Vacancy-engineering implants for high boron activation in silicon on insulator 203
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 203
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 202
Corrigendum to “Binder-free nanostructured germanium anode for high resilience lithium-ion battery” 201
Conductive graphitic layers induced in diamond by multi-species focused ion beam 201
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si 199
Binder-free nanostructured germanium anode for high resilience lithium-ion battery 199
Shallow NV- colour centres in diamond 198
Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects 198
Nanofabrication of self-organized periodic ripples by ion beam sputtering 197
ispettiva di sorveglianza 04-05 Luglio 2013 197
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 195
Hydrogen diffusion in GaAs1−xNx 193
ispettiva di sorveglianza 6-7 giugno 2012. 192
Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons 191
Characterization of Junction Activation and Deactivation Using non-Equilibrium 190
Diffusion and electrical activation of indium in silicon 189
Micro gas sensor device fabrication with ZnO sensing nanofilms by electron beam lithography 188
Complementary metrology within a European joint laboratory 188
Dynamic SIMS Characterization of Ge1-xSnx alloy 188
Cavity magnonics in strong coupling regime – from magnon-polariton hybrid states to perspectives for quantum sensing 187
Progress in the development of a KITWPA for the DARTWARS project 187
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 187
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic 187
Plasmonic enhanced photodetectors for near infra-red light detection 186
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 185
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS 185
Investigation on indium diffusion in silicon 184
Ultra shallow junction analysis for technology nodes beyond 65nm 184
Modeling of Josephson Traveling Wave Parametric Amplifiers 183
Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam 183
Design and preliminary characterizations of traveling wave parametric amplifiers for DARTWARS 183
XPS and SIMS Depth Profiling of Chlorine in High-Temperature Oxynitrides 182
Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions 181
Totale 23.015
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Categoria #
all - tutte 162.984
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 162.984
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022977 0 0 0 122 50 40 39 226 99 79 109 213
2022/20232.899 75 180 68 474 192 446 55 224 728 251 145 61
2023/20242.477 216 118 227 127 169 322 137 250 133 365 42 371
2024/20256.853 96 178 794 237 321 131 193 427 2.330 783 905 458
2025/202618.222 651 948 1.109 1.143 764 782 2.605 6.651 1.159 1.207 941 262
2026/20274.458 931 731 1.373 1.423 0 0 0 0 0 0 0 0
Totale 41.582