Samples produced by plasma immersion ion implantation of Arsenic in Silicon using a non-pulsed plasma source and subsequent laser annealing were investigated with respect to As depth distribution, oxide thickness, and As local order using SIMS, XPS, INAA and EXAFS analysis. A surface layer (∼10 nm), was identified as an As-rich Si oxide formed after implantation. The thickness of this layer was found to be larger for samples annealed using a low thermal budget up to a threshold where probably melting occurred. Dopant depth profile was re-distributed whereas the final oxide film of these samples showed thicknesses of a few nm. The retained As dose exhibited an apparent drastic increase. A hypothesis for the processes involved is presented based on experimental evidence.