IRIS Institutional Research Information System

Calliari, Lucia
 Distribuzione geografica
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Continente #
NA - Nord America 8.143
EU - Europa 7.616
AS - Asia 3.666
SA - Sud America 921
Continente sconosciuto - Info sul continente non disponibili 117
AF - Africa 107
OC - Oceania 4
Totale 20.574
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Nazione #
US - Stati Uniti d'America 7.855
RU - Federazione Russa 4.497
SG - Singapore 1.523
BR - Brasile 771
DE - Germania 767
CN - Cina 656
SE - Svezia 540
VN - Vietnam 508
HK - Hong Kong 463
UA - Ucraina 449
FI - Finlandia 297
GB - Regno Unito 231
FR - Francia 213
CA - Canada 196
IN - India 180
IT - Italia 150
IE - Irlanda 140
NL - Olanda 110
BE - Belgio 69
AR - Argentina 58
JP - Giappone 50
BD - Bangladesh 49
MX - Messico 47
PL - Polonia 42
ZA - Sudafrica 40
EU - Europa 37
IQ - Iraq 33
IR - Iran 31
TR - Turchia 30
ES - Italia 28
EC - Ecuador 19
PK - Pakistan 18
BG - Bulgaria 17
CO - Colombia 17
VE - Venezuela 17
PY - Paraguay 16
SA - Arabia Saudita 16
LT - Lituania 15
UZ - Uzbekistan 15
CZ - Repubblica Ceca 14
ID - Indonesia 14
MA - Marocco 14
DZ - Algeria 13
IL - Israele 11
JM - Giamaica 11
EG - Egitto 10
KE - Kenya 10
JO - Giordania 9
TN - Tunisia 9
AE - Emirati Arabi Uniti 7
CL - Cile 7
RO - Romania 7
CH - Svizzera 6
CR - Costa Rica 6
PE - Perù 6
TT - Trinidad e Tobago 6
AZ - Azerbaigian 5
HN - Honduras 5
NP - Nepal 5
OM - Oman 5
UY - Uruguay 5
BO - Bolivia 4
KZ - Kazakistan 4
LV - Lettonia 4
PH - Filippine 4
PS - Palestinian Territory 4
TH - Thailandia 4
AT - Austria 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
KG - Kirghizistan 3
KR - Corea 3
MY - Malesia 3
PA - Panama 3
RS - Serbia 3
SV - El Salvador 3
AU - Australia 2
BB - Barbados 2
CI - Costa d'Avorio 2
ET - Etiopia 2
GE - Georgia 2
HR - Croazia 2
KW - Kuwait 2
LB - Libano 2
NI - Nicaragua 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
TW - Taiwan 2
AG - Antigua e Barbuda 1
AL - Albania 1
AM - Armenia 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
FJ - Figi 1
FO - Isole Faroe 1
GA - Gabon 1
GD - Grenada 1
Totale 20.483
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Città #
Chandler 1.016
Jacksonville 917
Singapore 867
Council Bluffs 858
San Jose 798
Ashburn 540
Hong Kong 448
Moscow 321
Wilmington 253
Dallas 218
Beijing 212
The Dalles 208
Boardman 157
Ann Arbor 148
Helsinki 145
Ho Chi Minh City 140
Dublin 139
Munich 136
Hefei 134
Dong Ket 128
Kronberg 124
Lauterbourg 115
Dearborn 114
Los Angeles 101
Brooklyn 97
New York 88
Woodbridge 87
Hanoi 84
Mcallen 79
Santa Clara 77
Phoenix 75
Montréal 74
Seattle 74
São Paulo 73
Brussels 69
Trento 69
Pune 54
Toronto 49
Houston 48
Shanghai 44
Frankfurt am Main 42
Tokyo 41
Warsaw 35
Rio de Janeiro 32
Falkenstein 30
Montreal 28
Atlanta 27
Johannesburg 26
Turku 24
Belo Horizonte 23
London 23
Orem 23
Chennai 22
Denver 22
Poplar 22
Stockholm 22
Leawood 21
Miami 21
Da Nang 18
Manchester 18
Haiphong 16
Chicago 15
Tianjin 15
Buffalo 14
Redwood City 14
San Mateo 14
Tashkent 14
Augusta 13
Guangzhou 13
Mexico City 13
Monmouth Junction 13
Mountain View 13
Porto Alegre 13
Fortaleza 12
Hải Dương 12
Norwalk 12
Querétaro 12
Saint Petersburg 12
Ankara 11
Boston 11
Campinas 11
Ottawa 11
Ardabil 10
Hanover 10
Mumbai 10
Verona 10
Baghdad 9
Brno 9
Calgary 9
Erbil 9
Nairobi 9
Nanjing 9
Ageo 8
Amman 8
Brasília 8
City of London 8
Curitiba 8
Dhaka 8
Riyadh 8
San Francisco 8
Totale 10.340
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Nome #
A study of capacitance-voltage characteristics of amorphous carbon multilayer nanostructures 483
Amorphous carbon films PACVD in CH4-CO2 under pulsed and continous substrate bias conditions 247
a-C/Me (Me=Pt, Au) Nanocomposite Films for Electrochemical Gas Sensors 237
An electron spectroscopy study of a-C :H under thermal annealing 230
Chemical and microstructural characterisation of silicon-containing carbon films 225
Core-level photoemission from nanocluster-matrix composites: Au clusters in amorphous carbon 220
Amorphous carbon films PACVD in CH4-CO2 under pulsed and continuous substrate bias conditions 216
Characterization of Pristine and Functionalized Graphene on Metal Surfaces by Electron Spectroscopy 214
Nanostructures to boost material properties 211
Auger electron spectroscopy and x-ray diffraction studies of Ti-Si layers synthesised by ion implantation 210
Modeling and Characterization of Antireflection Coatings with Embedded Silver Nanoparticles for Silicon Solar Cells 207
Monte Carlo simulations of measured electron energy-loss spectra of diamond and graphite: Role of dielectric-response models 206
AES and core level photoemission in the study of a -C and a-C:H 203
An electron spectroscopy study of a-C:H films produced by PACVD in a CH4-CO2 gas mixture 203
Plasmonic Scattering by Silver Nanoparticles for Silicon Solar Cells: Modelling and Experimental Results 202
Light-opals interaction modeling by direct numerical solution of Maxwell's equations 202
Joint experimental and computational study of aluminum 201
PECVD of a-C:H films in CH4-CO2 plasma 199
Improved H2 production rate by hydrolysis of Ammonia Borane using quaternary alloy catalysts 198
Auger Quantitative Analysis of Brass Via Target Factor Analysis 196
Measuring the energy of the graphite pi + sigma plasmon peak 195
Ar+-Implantation Effects on the Interfacial Properties of the WC/TI-6Al-4V System 195
The role of hydrogen in the electronic structure of amorphous carbon: an electron spectroscopy study 194
Ca-silicides as prototypical systems for modelling the electron states at the Si(111)/Yb interface: A Si L2,3VV Auger line-shape investigation 190
Annealing of CVD un-doped diamond: a photoemission investigation 188
Effect of Si on the Electronic Structure of Sputter-Deposited C Films: An Electron Spectrocopy Study 186
A new photoemission approach to atomic diffusion along high conductivity paths: An application to Cu in Cd 185
XPS study of a-C:Au nanocomposites for catalytic applications 185
Real time investigation of the initial stages of a-C films growth 184
A propos du rôle sensibilisateur du SnCl2 dans l'argenture du verre 184
Joint experimental and computational study of silicon dioxide electron energy loss spectra 183
Auger depth-profiling of silicon dioxide on silicon: a Factor Analysis study 183
Ageing effects of thin films prepared by ion beam assisted deposition: a multitechnique characterization 183
X-Ray and UV Valence Band Photoemission of Carbon Films 182
Composition and structure of a-C:Au nanocomposites obtained by physicalvapour deposition 182
Laser-driven acceleration of protons from hydrogenated annealed silicon targets 181
Agglomeration at Si/Au interfaces: A study with Spatially Resolved Auger Line-shape Spectroscopy 179
Spectroscopic investigation of electroluminescent porous silicon 179
Anion-specific surface valence band-states in heteropolar semiconductors: the case of GaP(110) and InP(110) 178
Mixed ab initio quantum mechanical and Monte Carlo calculations of secondary emission from SiO2 nanoclusters 178
X-ray reflectivity study of the early stages of a-C:H film growth 177
Kinetic Isotope Effect in the Hydrogenation and Deuteration of Graphene 177
Thin film a-C/Pt nanocomposite catalysts for toxic gas sensors 176
Auger line-shape analysis of porous silicon: experiment and theory 176
Effective Medium Theory for REELS Analysis of Amorphous Carbon Films 175
Electron beam irradiation of hydrogenated amorphous carbon films 174
Computational and experimental study of pi and pi + sigma plasmon loss spectra for low energy (<1000 eV) electrons impinging on highly oriented pyrolitic graphite (HOPG) 173
Energy-Aware Gas Sensing Using Wireless Sensor Networks 172
The Influence of Metal Nanoparticle Size Distribution in Photoelectron Spectroscopy 172
H content determination at the (1 0 0) surface of homoepitaxial diamond by Elastic Peak Electron Spectroscopy 171
Direct observation of a dispersionless impurity band in hydrogenated graphene 171
On the use of elastic peak electron spectroscopy (EPES) tomeasure the H content of hydrogenated amorphous carbon films 171
Characterization of Carbon and Zirconia Films Deposited on Polycarbonate for Scratch-Proof Coating Applications 171
Assessment of spectroscopic methods for the characterization of DLC films deposited by PECVD 171
Erbium-doped thin amorphous carbon films prepared by mixed CVD-sputtering 170
On a dielectric approach to understand Electron Energy Loss Spectra from carbon materials 170
Analisi della forma di riga Auger in transizioni del tipo core-valenza-valenza (CVV): la transizione L2,3VV del silicio 170
Comparison between Monte Carlo and experimental aluminum and silicon electron energy loss spectra 170
Plasmonic Scattering by Metal Nanoparticles for Solar Cells 170
Thick and homogeneous surface layers obtained by reactive ion-beam-enhanced deposition 161
Valence electron states in Gd-silicides via Si L2,3VV Auger line-shape analysis 160
Role of core levels ionization in the electron induced dissociation of silicon dioxide 160
N+-implantation induced enhanced adhesion of amorphous-SiC films deposited on stainless steel 159
Effect of ion mixing on the wear behaviour of silver 156
Plasmon peak inhomogeneous broadening in reflection electron energy loss spectroscopy from carbon materials 155
Partial intensity approach for quantitative analysis of reflection-electron-energy-loss spectra 155
Reflection electron energy loss spectroscopy: role of the Bethe–Born factor 155
Electron spectroscopies and inelastic processes in nanoclusters and solids: Theory and experiment 152
Chemical and compositional changes induced by N+ implantation in amorphous SiC films 151
Towards a quantitative evaluation of sp2/sp3 ratio in C-based systems 150
Many-body effects at the Si L2,3VV Auger line-shape: The case of Ca silicides 148
Formation of BN by nitrogen ion implantation of boron deposits 147
The graphite Core-Valence-Valence Auger Spectrum 147
Mechanical and Structural properties of Ni-C Films Obtained by R.F. Sputtering 147
Segregation of impurities at grain boundaries and other compositional inhomogeneities in chill-casted silicon ingots 147
Diamond film nano-abrasives obtained by anodic arc 143
Boron valence states in the Fe-B system: an Auger line-shape investigation 142
Evaluation of several methods to measure the relative abundance of sp2 and sp3 hybridised atoms in carbon materials 139
Overlayer-induced Auger line-shape changes: the case of the P L2,3VV transition at the InP(110)/Sb interface 139
Thermodynamic Effects on Ion-beam Mixing in SiC-Metal Systems 139
Improvement of mechanical properties of a-C:H by silicon addition 139
Ion beam enhanced deposition and dynamic ion mixing for surface modification 138
Photoemission investigation on the oxidation of Si(111)-Ag interfaces and its relation to the interface structure 138
Composition changes in Ar+-implanted SiC: an attempt to distinguish ballistic and chemical effects 138
Energy loss of electrons backscattered from solids: measured and calculated spectra for Al and Si 138
Spectroscopic Characterization of Hard Carbon and Carbon-Based Films 137
Formation of vanadium silicide by high dose ion implantation 136
Partial screening in Ca silicides measured by Ca2p electron-energy-loss spectroscopy 136
Parallel finite-difference time-domain modeling of an opal photonic crystal 135
Effect of Si electronic structure of sputtered-deposited C films: an electron spectroscopy study 135
Development of DLC film technology for electronic application 133
The spatial extent of surface effects on electron inelastic scattering 133
Temperature evolution of the surface region of CVD diamond: an electron spectroscopy study 132
Metastability of the Si(111)/Cu interface: A spatially resolved Auger line-shape spectroscopy investigation 132
Quenching the surface electronic structure of P-containing III-V semiconductors via ordered (1x1) Sb overlayers: a P L2,3VV Auger line-shape analysis 132
Energy loss of electrons impinging upon glassy carbon, amorphous carbon, and diamond: Comparison between two different dispersion laws 132
Structure and optical properties of TiN films prepared by dc sputtering and by ion beam assisted deposition 131
The graphite Valence Band electronic structure: a combined Core-Valence-Valence Auger and Valence Band Photoemission study 130
Investigation of the structural properties of thin amorphous carbon films and bilayer structures 127
Observation of photodiode and electroluminescence effects for a-C/a-C:H multilayer nanostructures on silicon 127
Totale 17.312
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Categoria #
all - tutte 87.351
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 87.351
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022663 0 14 16 143 11 9 14 111 47 52 93 153
2022/20231.867 53 146 50 342 118 303 16 156 457 140 67 19
2023/20241.081 112 54 111 60 89 145 64 173 43 137 2 91
2024/20253.728 31 65 416 131 75 38 116 226 1.370 385 546 329
2025/20268.882 317 527 513 641 420 328 1.321 3.463 430 393 445 84
2026/2027626 394 232 0 0 0 0 0 0 0 0 0 0
Totale 20.574