IRIS Institutional Research Information System

Calliari, Lucia
 Distribuzione geografica
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Continente #
EU - Europa 7.553
NA - Nord America 7.551
AS - Asia 3.657
SA - Sud America 911
AF - Africa 107
Continente sconosciuto - Info sul continente non disponibili 37
OC - Oceania 4
Totale 19.820
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Nazione #
US - Stati Uniti d'America 7.276
RU - Federazione Russa 4.497
SG - Singapore 1.523
BR - Brasile 767
DE - Germania 764
CN - Cina 651
VN - Vietnam 506
SE - Svezia 495
HK - Hong Kong 462
UA - Ucraina 449
FI - Finlandia 297
GB - Regno Unito 231
FR - Francia 210
CA - Canada 192
IN - India 180
IT - Italia 144
IE - Irlanda 140
NL - Olanda 110
BE - Belgio 68
AR - Argentina 53
JP - Giappone 50
BD - Bangladesh 49
MX - Messico 45
PL - Polonia 42
ZA - Sudafrica 40
EU - Europa 37
IQ - Iraq 33
IR - Iran 31
TR - Turchia 30
ES - Italia 27
EC - Ecuador 19
PK - Pakistan 18
VE - Venezuela 17
BG - Bulgaria 16
CO - Colombia 16
PY - Paraguay 16
SA - Arabia Saudita 16
LT - Lituania 15
UZ - Uzbekistan 15
CZ - Repubblica Ceca 14
ID - Indonesia 14
MA - Marocco 14
DZ - Algeria 13
IL - Israele 11
EG - Egitto 10
JM - Giamaica 10
KE - Kenya 10
JO - Giordania 9
TN - Tunisia 9
AE - Emirati Arabi Uniti 7
CL - Cile 7
RO - Romania 7
CH - Svizzera 6
PE - Perù 6
AZ - Azerbaigian 5
OM - Oman 5
TT - Trinidad e Tobago 5
UY - Uruguay 5
BO - Bolivia 4
CR - Costa Rica 4
HN - Honduras 4
KZ - Kazakistan 4
LV - Lettonia 4
NP - Nepal 4
PH - Filippine 4
PS - Palestinian Territory 4
TH - Thailandia 4
AT - Austria 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
KG - Kirghizistan 3
KR - Corea 3
MY - Malesia 3
PA - Panama 3
RS - Serbia 3
SV - El Salvador 3
AU - Australia 2
BB - Barbados 2
CI - Costa d'Avorio 2
ET - Etiopia 2
GE - Georgia 2
HR - Croazia 2
KW - Kuwait 2
LB - Libano 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
TW - Taiwan 2
AL - Albania 1
AM - Armenia 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
FJ - Figi 1
GA - Gabon 1
GD - Grenada 1
GT - Guatemala 1
LY - Libia 1
ML - Mali 1
Totale 19.813
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Città #
Chandler 1.016
Jacksonville 917
Singapore 867
San Jose 789
Ashburn 538
Hong Kong 447
Council Bluffs 362
Moscow 321
Wilmington 252
Dallas 217
Beijing 208
The Dalles 205
Boardman 157
Ann Arbor 148
Helsinki 145
Ho Chi Minh City 140
Dublin 139
Munich 136
Hefei 134
Dong Ket 128
Kronberg 124
Lauterbourg 115
Dearborn 114
Los Angeles 98
Brooklyn 95
New York 86
Woodbridge 86
Hanoi 84
Mcallen 79
Montréal 74
Seattle 74
São Paulo 73
Santa Clara 72
Trento 69
Brussels 68
Phoenix 59
Pune 54
Toronto 49
Houston 48
Shanghai 44
Frankfurt am Main 42
Tokyo 41
Warsaw 35
Rio de Janeiro 31
Falkenstein 30
Montreal 28
Atlanta 27
Johannesburg 26
Turku 24
Belo Horizonte 23
London 23
Orem 23
Chennai 22
Denver 22
Poplar 22
Stockholm 22
Leawood 21
Da Nang 18
Miami 18
Manchester 17
Chicago 15
Haiphong 15
Tianjin 15
Redwood City 14
San Mateo 14
Tashkent 14
Augusta 13
Buffalo 13
Guangzhou 13
Mexico City 13
Monmouth Junction 13
Mountain View 13
Porto Alegre 13
Fortaleza 12
Hải Dương 12
Norwalk 12
Querétaro 12
Saint Petersburg 12
Ankara 11
Boston 11
Campinas 11
Ottawa 11
Ardabil 10
Hanover 10
Mumbai 10
Verona 10
Baghdad 9
Brno 9
Calgary 9
Erbil 9
Nairobi 9
Nanjing 9
Ageo 8
Amman 8
Brasília 8
City of London 8
Curitiba 8
Dhaka 8
Riyadh 8
San Francisco 8
Totale 9.786
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Nome #
A study of capacitance-voltage characteristics of amorphous carbon multilayer nanostructures 479
Amorphous carbon films PACVD in CH4-CO2 under pulsed and continous substrate bias conditions 242
a-C/Me (Me=Pt, Au) Nanocomposite Films for Electrochemical Gas Sensors 232
An electron spectroscopy study of a-C :H under thermal annealing 226
Chemical and microstructural characterisation of silicon-containing carbon films 218
Core-level photoemission from nanocluster-matrix composites: Au clusters in amorphous carbon 213
Amorphous carbon films PACVD in CH4-CO2 under pulsed and continuous substrate bias conditions 210
Nanostructures to boost material properties 207
Auger electron spectroscopy and x-ray diffraction studies of Ti-Si layers synthesised by ion implantation 204
Characterization of Pristine and Functionalized Graphene on Metal Surfaces by Electron Spectroscopy 201
Modeling and Characterization of Antireflection Coatings with Embedded Silver Nanoparticles for Silicon Solar Cells 200
Monte Carlo simulations of measured electron energy-loss spectra of diamond and graphite: Role of dielectric-response models 200
An electron spectroscopy study of a-C:H films produced by PACVD in a CH4-CO2 gas mixture 198
AES and core level photoemission in the study of a -C and a-C:H 197
Joint experimental and computational study of aluminum 195
Plasmonic Scattering by Silver Nanoparticles for Silicon Solar Cells: Modelling and Experimental Results 195
Improved H2 production rate by hydrolysis of Ammonia Borane using quaternary alloy catalysts 194
Light-opals interaction modeling by direct numerical solution of Maxwell's equations 194
PECVD of a-C:H films in CH4-CO2 plasma 194
Auger Quantitative Analysis of Brass Via Target Factor Analysis 190
Ar+-Implantation Effects on the Interfacial Properties of the WC/TI-6Al-4V System 189
The role of hydrogen in the electronic structure of amorphous carbon: an electron spectroscopy study 189
Measuring the energy of the graphite pi + sigma plasmon peak 186
Ca-silicides as prototypical systems for modelling the electron states at the Si(111)/Yb interface: A Si L2,3VV Auger line-shape investigation 183
Annealing of CVD un-doped diamond: a photoemission investigation 182
XPS study of a-C:Au nanocomposites for catalytic applications 180
Effect of Si on the Electronic Structure of Sputter-Deposited C Films: An Electron Spectrocopy Study 179
Real time investigation of the initial stages of a-C films growth 179
X-Ray and UV Valence Band Photoemission of Carbon Films 178
Joint experimental and computational study of silicon dioxide electron energy loss spectra 178
A propos du rôle sensibilisateur du SnCl2 dans l'argenture du verre 178
A new photoemission approach to atomic diffusion along high conductivity paths: An application to Cu in Cd 178
Composition and structure of a-C:Au nanocomposites obtained by physicalvapour deposition 177
Ageing effects of thin films prepared by ion beam assisted deposition: a multitechnique characterization 177
Auger depth-profiling of silicon dioxide on silicon: a Factor Analysis study 175
Laser-driven acceleration of protons from hydrogenated annealed silicon targets 175
Agglomeration at Si/Au interfaces: A study with Spatially Resolved Auger Line-shape Spectroscopy 173
Spectroscopic investigation of electroluminescent porous silicon 173
Anion-specific surface valence band-states in heteropolar semiconductors: the case of GaP(110) and InP(110) 172
X-ray reflectivity study of the early stages of a-C:H film growth 171
Kinetic Isotope Effect in the Hydrogenation and Deuteration of Graphene 171
Mixed ab initio quantum mechanical and Monte Carlo calculations of secondary emission from SiO2 nanoclusters 171
Thin film a-C/Pt nanocomposite catalysts for toxic gas sensors 170
Auger line-shape analysis of porous silicon: experiment and theory 169
Electron beam irradiation of hydrogenated amorphous carbon films 168
Effective Medium Theory for REELS Analysis of Amorphous Carbon Films 168
Computational and experimental study of pi and pi + sigma plasmon loss spectra for low energy (<1000 eV) electrons impinging on highly oriented pyrolitic graphite (HOPG) 167
Assessment of spectroscopic methods for the characterization of DLC films deposited by PECVD 166
The Influence of Metal Nanoparticle Size Distribution in Photoelectron Spectroscopy 166
Erbium-doped thin amorphous carbon films prepared by mixed CVD-sputtering 165
On a dielectric approach to understand Electron Energy Loss Spectra from carbon materials 165
H content determination at the (1 0 0) surface of homoepitaxial diamond by Elastic Peak Electron Spectroscopy 165
On the use of elastic peak electron spectroscopy (EPES) tomeasure the H content of hydrogenated amorphous carbon films 165
Characterization of Carbon and Zirconia Films Deposited on Polycarbonate for Scratch-Proof Coating Applications 165
Analisi della forma di riga Auger in transizioni del tipo core-valenza-valenza (CVV): la transizione L2,3VV del silicio 164
Direct observation of a dispersionless impurity band in hydrogenated graphene 164
Comparison between Monte Carlo and experimental aluminum and silicon electron energy loss spectra 164
Energy-Aware Gas Sensing Using Wireless Sensor Networks 164
Plasmonic Scattering by Metal Nanoparticles for Solar Cells 162
Thick and homogeneous surface layers obtained by reactive ion-beam-enhanced deposition 157
Valence electron states in Gd-silicides via Si L2,3VV Auger line-shape analysis 157
Role of core levels ionization in the electron induced dissociation of silicon dioxide 157
N+-implantation induced enhanced adhesion of amorphous-SiC films deposited on stainless steel 155
Effect of ion mixing on the wear behaviour of silver 152
Partial intensity approach for quantitative analysis of reflection-electron-energy-loss spectra 151
Reflection electron energy loss spectroscopy: role of the Bethe–Born factor 151
Plasmon peak inhomogeneous broadening in reflection electron energy loss spectroscopy from carbon materials 150
Chemical and compositional changes induced by N+ implantation in amorphous SiC films 147
Electron spectroscopies and inelastic processes in nanoclusters and solids: Theory and experiment 147
The graphite Core-Valence-Valence Auger Spectrum 144
Towards a quantitative evaluation of sp2/sp3 ratio in C-based systems 144
Many-body effects at the Si L2,3VV Auger line-shape: The case of Ca silicides 143
Segregation of impurities at grain boundaries and other compositional inhomogeneities in chill-casted silicon ingots 143
Formation of BN by nitrogen ion implantation of boron deposits 141
Mechanical and Structural properties of Ni-C Films Obtained by R.F. Sputtering 141
Boron valence states in the Fe-B system: an Auger line-shape investigation 138
Diamond film nano-abrasives obtained by anodic arc 138
Improvement of mechanical properties of a-C:H by silicon addition 136
Photoemission investigation on the oxidation of Si(111)-Ag interfaces and its relation to the interface structure 135
Evaluation of several methods to measure the relative abundance of sp2 and sp3 hybridised atoms in carbon materials 134
Overlayer-induced Auger line-shape changes: the case of the P L2,3VV transition at the InP(110)/Sb interface 134
Composition changes in Ar+-implanted SiC: an attempt to distinguish ballistic and chemical effects 134
Thermodynamic Effects on Ion-beam Mixing in SiC-Metal Systems 134
Energy loss of electrons backscattered from solids: measured and calculated spectra for Al and Si 134
Ion beam enhanced deposition and dynamic ion mixing for surface modification 133
Formation of vanadium silicide by high dose ion implantation 132
Spectroscopic Characterization of Hard Carbon and Carbon-Based Films 132
Parallel finite-difference time-domain modeling of an opal photonic crystal 131
Partial screening in Ca silicides measured by Ca2p electron-energy-loss spectroscopy 130
Effect of Si electronic structure of sputtered-deposited C films: an electron spectroscopy study 130
Metastability of the Si(111)/Cu interface: A spatially resolved Auger line-shape spectroscopy investigation 128
Quenching the surface electronic structure of P-containing III-V semiconductors via ordered (1x1) Sb overlayers: a P L2,3VV Auger line-shape analysis 128
Development of DLC film technology for electronic application 128
The spatial extent of surface effects on electron inelastic scattering 128
Temperature evolution of the surface region of CVD diamond: an electron spectroscopy study 127
The graphite Valence Band electronic structure: a combined Core-Valence-Valence Auger and Valence Band Photoemission study 125
Structure and optical properties of TiN films prepared by dc sputtering and by ion beam assisted deposition 125
Energy loss of electrons impinging upon glassy carbon, amorphous carbon, and diamond: Comparison between two different dispersion laws 125
Plasmon features in electron energy loss spectra from carbon materials 122
Preferential effects in electron irradiated silicon dioxide 122
Totale 16.763
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Categoria #
all - tutte 84.306
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 84.306
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021210 0 0 0 0 0 0 0 0 0 0 0 210
2021/2022705 42 14 16 143 11 9 14 111 47 52 93 153
2022/20231.867 53 146 50 342 118 303 16 156 457 140 67 19
2023/20241.081 112 54 111 60 89 145 64 173 43 137 2 91
2024/20253.728 31 65 416 131 75 38 116 226 1.370 385 546 329
2025/20268.834 317 527 513 641 420 328 1.321 3.463 430 393 445 36
Totale 19.900