IRIS Institutional Research Information System

Calliari, Lucia
 Distribuzione geografica
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Continente #
EU - Europa 7.532
NA - Nord America 6.994
AS - Asia 3.646
SA - Sud America 911
AF - Africa 107
Continente sconosciuto - Info sul continente non disponibili 37
OC - Oceania 4
Totale 19.231
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Nazione #
US - Stati Uniti d'America 6.729
RU - Federazione Russa 4.497
SG - Singapore 1.522
BR - Brasile 767
DE - Germania 764
CN - Cina 646
VN - Vietnam 506
SE - Svezia 482
HK - Hong Kong 458
UA - Ucraina 449
FI - Finlandia 297
GB - Regno Unito 231
FR - Francia 205
CA - Canada 186
IN - India 180
IT - Italia 141
IE - Irlanda 140
NL - Olanda 110
BE - Belgio 68
AR - Argentina 53
JP - Giappone 50
BD - Bangladesh 48
MX - Messico 45
PL - Polonia 42
ZA - Sudafrica 40
EU - Europa 37
IQ - Iraq 33
IR - Iran 31
TR - Turchia 30
ES - Italia 27
EC - Ecuador 19
PK - Pakistan 18
VE - Venezuela 17
BG - Bulgaria 16
CO - Colombia 16
PY - Paraguay 16
SA - Arabia Saudita 16
LT - Lituania 15
UZ - Uzbekistan 15
CZ - Repubblica Ceca 14
ID - Indonesia 14
MA - Marocco 14
DZ - Algeria 13
IL - Israele 11
EG - Egitto 10
KE - Kenya 10
JM - Giamaica 9
JO - Giordania 9
TN - Tunisia 9
AE - Emirati Arabi Uniti 7
CL - Cile 7
RO - Romania 7
CH - Svizzera 6
PE - Perù 6
AZ - Azerbaigian 5
OM - Oman 5
TT - Trinidad e Tobago 5
UY - Uruguay 5
BO - Bolivia 4
CR - Costa Rica 4
KZ - Kazakistan 4
LV - Lettonia 4
NP - Nepal 4
PH - Filippine 4
PS - Palestinian Territory 4
TH - Thailandia 4
AT - Austria 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
HN - Honduras 3
KG - Kirghizistan 3
KR - Corea 3
MY - Malesia 3
PA - Panama 3
RS - Serbia 3
AU - Australia 2
BB - Barbados 2
CI - Costa d'Avorio 2
ET - Etiopia 2
GE - Georgia 2
HR - Croazia 2
KW - Kuwait 2
LB - Libano 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SV - El Salvador 2
TW - Taiwan 2
AL - Albania 1
AM - Armenia 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
FJ - Figi 1
GA - Gabon 1
GD - Grenada 1
GT - Guatemala 1
LY - Libia 1
ML - Mali 1
Totale 19.225
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Città #
Chandler 1.016
Jacksonville 916
Singapore 866
San Jose 689
Ashburn 537
Hong Kong 443
Moscow 321
Wilmington 252
Dallas 217
Beijing 206
The Dalles 205
Boardman 157
Ann Arbor 148
Helsinki 145
Ho Chi Minh City 140
Dublin 139
Munich 136
Hefei 134
Dong Ket 128
Kronberg 124
Lauterbourg 115
Dearborn 114
Los Angeles 97
Brooklyn 94
Woodbridge 86
Hanoi 84
New York 83
Mcallen 79
Montréal 74
Seattle 74
São Paulo 73
Santa Clara 70
Trento 69
Brussels 68
Phoenix 59
Pune 54
Houston 48
Toronto 48
Shanghai 44
Frankfurt am Main 42
Tokyo 41
Warsaw 35
Rio de Janeiro 31
Falkenstein 30
Montreal 28
Johannesburg 26
Atlanta 25
Turku 24
Belo Horizonte 23
London 23
Orem 23
Chennai 22
Poplar 22
Stockholm 22
Denver 21
Leawood 21
Da Nang 18
Miami 18
Haiphong 15
Manchester 15
Tianjin 15
Chicago 14
Redwood City 14
San Mateo 14
Tashkent 14
Augusta 13
Guangzhou 13
Mexico City 13
Monmouth Junction 13
Mountain View 13
Porto Alegre 13
Fortaleza 12
Hải Dương 12
Norwalk 12
Querétaro 12
Saint Petersburg 12
Ankara 11
Boston 11
Campinas 11
Ardabil 10
Buffalo 10
Hanover 10
Mumbai 10
Ottawa 10
Verona 10
Baghdad 9
Brno 9
Calgary 9
Erbil 9
Nairobi 9
Nanjing 9
Ageo 8
Amman 8
Brasília 8
City of London 8
Curitiba 8
Dhaka 8
Riyadh 8
San Francisco 8
São Bernardo do Campo 8
Totale 9.305
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Nome #
A study of capacitance-voltage characteristics of amorphous carbon multilayer nanostructures 471
Amorphous carbon films PACVD in CH4-CO2 under pulsed and continous substrate bias conditions 236
a-C/Me (Me=Pt, Au) Nanocomposite Films for Electrochemical Gas Sensors 227
An electron spectroscopy study of a-C :H under thermal annealing 221
Chemical and microstructural characterisation of silicon-containing carbon films 213
Core-level photoemission from nanocluster-matrix composites: Au clusters in amorphous carbon 207
Nanostructures to boost material properties 203
Amorphous carbon films PACVD in CH4-CO2 under pulsed and continuous substrate bias conditions 202
Auger electron spectroscopy and x-ray diffraction studies of Ti-Si layers synthesised by ion implantation 199
Characterization of Pristine and Functionalized Graphene on Metal Surfaces by Electron Spectroscopy 197
Modeling and Characterization of Antireflection Coatings with Embedded Silver Nanoparticles for Silicon Solar Cells 195
Monte Carlo simulations of measured electron energy-loss spectra of diamond and graphite: Role of dielectric-response models 195
PECVD of a-C:H films in CH4-CO2 plasma 192
AES and core level photoemission in the study of a -C and a-C:H 191
An electron spectroscopy study of a-C:H films produced by PACVD in a CH4-CO2 gas mixture 191
Plasmonic Scattering by Silver Nanoparticles for Silicon Solar Cells: Modelling and Experimental Results 190
Joint experimental and computational study of aluminum 189
Light-opals interaction modeling by direct numerical solution of Maxwell's equations 189
Improved H2 production rate by hydrolysis of Ammonia Borane using quaternary alloy catalysts 188
Auger Quantitative Analysis of Brass Via Target Factor Analysis 185
Measuring the energy of the graphite pi + sigma plasmon peak 183
Ar+-Implantation Effects on the Interfacial Properties of the WC/TI-6Al-4V System 183
The role of hydrogen in the electronic structure of amorphous carbon: an electron spectroscopy study 182
Annealing of CVD un-doped diamond: a photoemission investigation 178
Ca-silicides as prototypical systems for modelling the electron states at the Si(111)/Yb interface: A Si L2,3VV Auger line-shape investigation 178
X-Ray and UV Valence Band Photoemission of Carbon Films 175
Effect of Si on the Electronic Structure of Sputter-Deposited C Films: An Electron Spectrocopy Study 175
A propos du rôle sensibilisateur du SnCl2 dans l'argenture du verre 175
Real time investigation of the initial stages of a-C films growth 174
Joint experimental and computational study of silicon dioxide electron energy loss spectra 174
XPS study of a-C:Au nanocomposites for catalytic applications 174
Composition and structure of a-C:Au nanocomposites obtained by physicalvapour deposition 173
A new photoemission approach to atomic diffusion along high conductivity paths: An application to Cu in Cd 172
Ageing effects of thin films prepared by ion beam assisted deposition: a multitechnique characterization 172
Laser-driven acceleration of protons from hydrogenated annealed silicon targets 171
Agglomeration at Si/Au interfaces: A study with Spatially Resolved Auger Line-shape Spectroscopy 170
Auger depth-profiling of silicon dioxide on silicon: a Factor Analysis study 170
Mixed ab initio quantum mechanical and Monte Carlo calculations of secondary emission from SiO2 nanoclusters 169
Spectroscopic investigation of electroluminescent porous silicon 168
Anion-specific surface valence band-states in heteropolar semiconductors: the case of GaP(110) and InP(110) 167
Kinetic Isotope Effect in the Hydrogenation and Deuteration of Graphene 167
X-ray reflectivity study of the early stages of a-C:H film growth 166
Thin film a-C/Pt nanocomposite catalysts for toxic gas sensors 166
Auger line-shape analysis of porous silicon: experiment and theory 166
Effective Medium Theory for REELS Analysis of Amorphous Carbon Films 165
Electron beam irradiation of hydrogenated amorphous carbon films 164
Erbium-doped thin amorphous carbon films prepared by mixed CVD-sputtering 162
Computational and experimental study of pi and pi + sigma plasmon loss spectra for low energy (<1000 eV) electrons impinging on highly oriented pyrolitic graphite (HOPG) 162
On the use of elastic peak electron spectroscopy (EPES) tomeasure the H content of hydrogenated amorphous carbon films 161
Assessment of spectroscopic methods for the characterization of DLC films deposited by PECVD 161
On a dielectric approach to understand Electron Energy Loss Spectra from carbon materials 160
H content determination at the (1 0 0) surface of homoepitaxial diamond by Elastic Peak Electron Spectroscopy 160
Direct observation of a dispersionless impurity band in hydrogenated graphene 160
Characterization of Carbon and Zirconia Films Deposited on Polycarbonate for Scratch-Proof Coating Applications 160
The Influence of Metal Nanoparticle Size Distribution in Photoelectron Spectroscopy 160
Analisi della forma di riga Auger in transizioni del tipo core-valenza-valenza (CVV): la transizione L2,3VV del silicio 159
Comparison between Monte Carlo and experimental aluminum and silicon electron energy loss spectra 159
Energy-Aware Gas Sensing Using Wireless Sensor Networks 159
Plasmonic Scattering by Metal Nanoparticles for Solar Cells 158
Role of core levels ionization in the electron induced dissociation of silicon dioxide 155
Thick and homogeneous surface layers obtained by reactive ion-beam-enhanced deposition 153
Valence electron states in Gd-silicides via Si L2,3VV Auger line-shape analysis 153
N+-implantation induced enhanced adhesion of amorphous-SiC films deposited on stainless steel 150
Effect of ion mixing on the wear behaviour of silver 148
Reflection electron energy loss spectroscopy: role of the Bethe–Born factor 146
Plasmon peak inhomogeneous broadening in reflection electron energy loss spectroscopy from carbon materials 145
Partial intensity approach for quantitative analysis of reflection-electron-energy-loss spectra 145
Chemical and compositional changes induced by N+ implantation in amorphous SiC films 143
The graphite Core-Valence-Valence Auger Spectrum 140
Electron spectroscopies and inelastic processes in nanoclusters and solids: Theory and experiment 140
Many-body effects at the Si L2,3VV Auger line-shape: The case of Ca silicides 138
Mechanical and Structural properties of Ni-C Films Obtained by R.F. Sputtering 136
Formation of BN by nitrogen ion implantation of boron deposits 135
Segregation of impurities at grain boundaries and other compositional inhomogeneities in chill-casted silicon ingots 135
Towards a quantitative evaluation of sp2/sp3 ratio in C-based systems 134
Boron valence states in the Fe-B system: an Auger line-shape investigation 133
Diamond film nano-abrasives obtained by anodic arc 133
Improvement of mechanical properties of a-C:H by silicon addition 132
Energy loss of electrons backscattered from solids: measured and calculated spectra for Al and Si 131
Photoemission investigation on the oxidation of Si(111)-Ag interfaces and its relation to the interface structure 130
Overlayer-induced Auger line-shape changes: the case of the P L2,3VV transition at the InP(110)/Sb interface 130
Evaluation of several methods to measure the relative abundance of sp2 and sp3 hybridised atoms in carbon materials 129
Composition changes in Ar+-implanted SiC: an attempt to distinguish ballistic and chemical effects 129
Parallel finite-difference time-domain modeling of an opal photonic crystal 129
Formation of vanadium silicide by high dose ion implantation 128
Thermodynamic Effects on Ion-beam Mixing in SiC-Metal Systems 128
Ion beam enhanced deposition and dynamic ion mixing for surface modification 127
Spectroscopic Characterization of Hard Carbon and Carbon-Based Films 127
Effect of Si electronic structure of sputtered-deposited C films: an electron spectroscopy study 126
Quenching the surface electronic structure of P-containing III-V semiconductors via ordered (1x1) Sb overlayers: a P L2,3VV Auger line-shape analysis 125
Partial screening in Ca silicides measured by Ca2p electron-energy-loss spectroscopy 125
Metastability of the Si(111)/Cu interface: A spatially resolved Auger line-shape spectroscopy investigation 124
Development of DLC film technology for electronic application 124
Temperature evolution of the surface region of CVD diamond: an electron spectroscopy study 123
The spatial extent of surface effects on electron inelastic scattering 122
The graphite Valence Band electronic structure: a combined Core-Valence-Valence Auger and Valence Band Photoemission study 121
Energy loss of electrons impinging upon glassy carbon, amorphous carbon, and diamond: Comparison between two different dispersion laws 120
Plasmon features in electron energy loss spectra from carbon materials 119
Structure and optical properties of TiN films prepared by dc sputtering and by ion beam assisted deposition 119
Observation of photodiode and electroluminescence effects for a-C/a-C:H multilayer nanostructures on silicon 119
Totale 16.288
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Categoria #
all - tutte 80.412
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.412
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021549 0 0 0 0 0 0 0 0 0 268 71 210
2021/2022705 42 14 16 143 11 9 14 111 47 52 93 153
2022/20231.867 53 146 50 342 118 303 16 156 457 140 67 19
2023/20241.081 112 54 111 60 89 145 64 173 43 137 2 91
2024/20253.728 31 65 416 131 75 38 116 226 1.370 385 546 329
2025/20268.245 317 527 513 641 420 328 1.321 3.463 430 285 0 0
Totale 19.311