Desorption of ions and neutrals from surfaces under low energy (a few keV) electron or photon irradiation has long been recognized as due to electronic excitations not only from the outer valence levels involved in the bonding, but also from the inner levels.In this work, we present an Auger investigation of electron beam induced compositional changes (damage) at the silicon dioxide surface.
Role of core levels ionization in the electron induced dissociation of silicon dioxide
Calliari, Lucia;Dapor, Maurizio;Gonzo, Lorenzo;
1990-01-01
Abstract
Desorption of ions and neutrals from surfaces under low energy (a few keV) electron or photon irradiation has long been recognized as due to electronic excitations not only from the outer valence levels involved in the bonding, but also from the inner levels.In this work, we present an Auger investigation of electron beam induced compositional changes (damage) at the silicon dioxide surface.File in questo prodotto:
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