The widely differing properties of amorphous C films originate from the different s-p hybridization schemes possibly occurring in the C-C bond. For the study of such systems, an approach is suggested that provides direct access to these different types of s-p hybridization via a separate mapping of the s and p partial Density Of States (DOS) contributing to the total Valence Band (VB) DOS in C materials. Both X-Ray and UV excited VB spectra are needed to this end: the dependence of photoionization cross-sections on photon energy makes in fact X-Ray excited VB Photoemission essentially a probe of the s-DOS and UV excited VB Photoemission essentially a probe of the p-DOS
X-Ray and UV Valence Band Photoemission of Carbon Films
Calliari, Lucia;Bensaada Laidani, Nadhira;Speranza, Giorgio
1998-01-01
Abstract
The widely differing properties of amorphous C films originate from the different s-p hybridization schemes possibly occurring in the C-C bond. For the study of such systems, an approach is suggested that provides direct access to these different types of s-p hybridization via a separate mapping of the s and p partial Density Of States (DOS) contributing to the total Valence Band (VB) DOS in C materials. Both X-Ray and UV excited VB spectra are needed to this end: the dependence of photoionization cross-sections on photon energy makes in fact X-Ray excited VB Photoemission essentially a probe of the s-DOS and UV excited VB Photoemission essentially a probe of the p-DOSI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
