The chemical and microstructural modifications of carbon films, induced by silicon incorporation during the film growth, were studied on films deposited by rf magnetron sputtering of a graphite-silicon target. Silicon incorporation produced Si-C bondings in the films and an increased defect density in the carbon matrix structure. Besides, increasing the silicon content resulted in a significant decrease of the ƒà-plasmon loss peak intensity in the C1s binding energy region in the x-ray photoelectron spectra, along with a lineshape sharpening for the ƒãƒ{s component of the valence band spectra. This specific electronic structure is best discussed in terms of ƒãƒ{ƒà system perturbations rather than in terms of an increased sp3/ sp2 hybridisation ratio in the films
Chemical and microstructural characterisation of silicon-containing carbon films
Bensaada Laidani, Nadhira;Speranza, Giorgio;Calliari, Lucia;Micheli, Victor;Anderle, Mariano
2002-01-01
Abstract
The chemical and microstructural modifications of carbon films, induced by silicon incorporation during the film growth, were studied on films deposited by rf magnetron sputtering of a graphite-silicon target. Silicon incorporation produced Si-C bondings in the films and an increased defect density in the carbon matrix structure. Besides, increasing the silicon content resulted in a significant decrease of the ƒà-plasmon loss peak intensity in the C1s binding energy region in the x-ray photoelectron spectra, along with a lineshape sharpening for the ƒãƒ{s component of the valence band spectra. This specific electronic structure is best discussed in terms of ƒãƒ{ƒà system perturbations rather than in terms of an increased sp3/ sp2 hybridisation ratio in the filmsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
