Experimental reflection electron energy loss spectra from silicon dioxide are excited by electrons with energy ranging from 90 eV to 2 keV. A Monte Carlo simulation, shortly described, is utilized to calculate the same spectra. The comparison between simulated and experimental spectra shows substantial agreement, particularly at high exciting energies. Differences at low exciting energies are mainly ascribed to surface effects.

Joint experimental and computational study of silicon dioxide electron energy loss spectra

Filippi, Massimiliano;Calliari, Lucia;Dapor, Maurizio
2007-01-01

Abstract

Experimental reflection electron energy loss spectra from silicon dioxide are excited by electrons with energy ranging from 90 eV to 2 keV. A Monte Carlo simulation, shortly described, is utilized to calculate the same spectra. The comparison between simulated and experimental spectra shows substantial agreement, particularly at high exciting energies. Differences at low exciting energies are mainly ascribed to surface effects.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3262
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