This work reports on Ar+-implantation effects on structural, compositional and mechanical properties of the WC/Ti-6Al-4V system interface. The WC films were deposited by r.f. magnetron sputtering on Ti-6Al-4V substrates and then implanted at the film-substrate interface with Ar+ ions at 160keV. Two parameters have been varied in the implantations: the ion dose, F (F varying in the 1x1016-2X1017 atoms cm-2 range) and the sample temperature, T (in the ranges 298-333K and 393-463K). X-Ray diffraction measurements indicate that ion implantation induced the formation of a new phase, which can be identified as (Ti,W) C1-x or, more probably, W2(C,O). In Auger concentration depth-profiles, a large broadening of the interface was observed as a consequence of the implantations. Scratch tests indicate a small increase in film substrate adhesion
Ar+-Implantation Effects on the Interfacial Properties of the WC/TI-6Al-4V System
Bensaada Laidani, Nadhira;Calliari, Lucia
1998-01-01
Abstract
This work reports on Ar+-implantation effects on structural, compositional and mechanical properties of the WC/Ti-6Al-4V system interface. The WC films were deposited by r.f. magnetron sputtering on Ti-6Al-4V substrates and then implanted at the film-substrate interface with Ar+ ions at 160keV. Two parameters have been varied in the implantations: the ion dose, F (F varying in the 1x1016-2X1017 atoms cm-2 range) and the sample temperature, T (in the ranges 298-333K and 393-463K). X-Ray diffraction measurements indicate that ion implantation induced the formation of a new phase, which can be identified as (Ti,W) C1-x or, more probably, W2(C,O). In Auger concentration depth-profiles, a large broadening of the interface was observed as a consequence of the implantations. Scratch tests indicate a small increase in film substrate adhesionI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
