The effects of 30 keV N+ implantation in amorphous silicon carbide films deposited on silicon substrates by rf sputtering over a fluence range of 1×1016–2×1017 ions cm−2, are studied by means of x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared (IR) absorption techniques. The ion‐induced modifications of these films have been investigated on the basis of the chemical state evolution of Si, C, and N (using XPS and AES) and on the basis of the vibrational features of the films components (using IR absorption). The results show that implanted N bonds Si selectively, substituting the C atoms in the silicon carbide, and the C substitution by N results in a composite layer of carbonitrides and free C. An ion‐induced C transport has also been observed and correlations are established between the formation of silicon carbonitrides and the dynamical behavior of the C in the implanted layer. The latter appears as a superposition of (a) a chemically induced atomic redistribution, required by local stoichiometry and space‐filling possibilities in an amorphous network, and (b) a radiation‐induced redistribution, a mechanism that is prevailing at low‐fluence implantation.  

Chemical and compositional changes induced by N+ implantation in amorphous SiC films

Bensaada Laidani, Nadhira;Calliari, Lucia;
1993

Abstract

The effects of 30 keV N+ implantation in amorphous silicon carbide films deposited on silicon substrates by rf sputtering over a fluence range of 1×1016–2×1017 ions cm−2, are studied by means of x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared (IR) absorption techniques. The ion‐induced modifications of these films have been investigated on the basis of the chemical state evolution of Si, C, and N (using XPS and AES) and on the basis of the vibrational features of the films components (using IR absorption). The results show that implanted N bonds Si selectively, substituting the C atoms in the silicon carbide, and the C substitution by N results in a composite layer of carbonitrides and free C. An ion‐induced C transport has also been observed and correlations are established between the formation of silicon carbonitrides and the dynamical behavior of the C in the implanted layer. The latter appears as a superposition of (a) a chemically induced atomic redistribution, required by local stoichiometry and space‐filling possibilities in an amorphous network, and (b) a radiation‐induced redistribution, a mechanism that is prevailing at low‐fluence implantation.  
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/7130
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