Dark and illuminated capacitance–voltage (C–V) characteristics and admittance measurements were carried out on multilayer carbon structures.The latter were produced by depositing ultrathin amorphous carbon layers with different optical band gaps on a monocrystalline boron-doped silicon substrate.The carbon layers were grown either by magnetron sputtering (MS) of a graphite target in argon or by plasma ion beam deposition (IBD) in cyclohexane.The structures were characterised by X-ray reflectivity (XRR). With respect to their electrical properties, it was shown that light strongly affects both the C–V-characteristics and the admittance.The results were interpreted in terms of the energy levels in these amorphous carbon multilayer structures
A study of capacitance-voltage characteristics of amorphous carbon multilayer nanostructures
Baranov, Alexandr;Calliari, Lucia;Speranza, Giorgio
2004-01-01
Abstract
Dark and illuminated capacitance–voltage (C–V) characteristics and admittance measurements were carried out on multilayer carbon structures.The latter were produced by depositing ultrathin amorphous carbon layers with different optical band gaps on a monocrystalline boron-doped silicon substrate.The carbon layers were grown either by magnetron sputtering (MS) of a graphite target in argon or by plasma ion beam deposition (IBD) in cyclohexane.The structures were characterised by X-ray reflectivity (XRR). With respect to their electrical properties, it was shown that light strongly affects both the C–V-characteristics and the admittance.The results were interpreted in terms of the energy levels in these amorphous carbon multilayer structuresI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
