IRIS Institutional Research Information System

Gennaro, Salvatore
 Distribuzione geografica
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Continente #
EU - Europa 5.040
NA - Nord America 4.512
AS - Asia 2.133
SA - Sud America 425
AF - Africa 48
Continente sconosciuto - Info sul continente non disponibili 36
OC - Oceania 4
Totale 12.198
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Nazione #
US - Stati Uniti d'America 4.409
RU - Federazione Russa 2.465
UA - Ucraina 958
SG - Singapore 761
CN - Cina 393
DE - Germania 391
BR - Brasile 368
SE - Svezia 324
HK - Hong Kong 318
VN - Vietnam 268
FI - Finlandia 194
GB - Regno Unito 160
IN - India 140
FR - Francia 130
NL - Olanda 90
IE - Irlanda 80
IT - Italia 57
CA - Canada 47
EE - Estonia 37
JP - Giappone 36
MX - Messico 32
PL - Polonia 28
BD - Bangladesh 27
AR - Argentina 26
AT - Austria 25
IL - Israele 25
CZ - Repubblica Ceca 24
ES - Italia 23
ZA - Sudafrica 21
KR - Corea 20
BE - Belgio 19
IR - Iran 18
IQ - Iraq 17
SA - Arabia Saudita 15
PH - Filippine 14
LT - Lituania 12
PK - Pakistan 12
TR - Turchia 12
EU - Europa 11
MA - Marocco 11
AE - Emirati Arabi Uniti 9
JO - Giordania 9
EC - Ecuador 7
TW - Taiwan 7
JM - Giamaica 6
UZ - Uzbekistan 6
VE - Venezuela 6
CR - Costa Rica 5
ID - Indonesia 5
PY - Paraguay 5
BO - Bolivia 4
BZ - Belize 4
CO - Colombia 4
KE - Kenya 4
MY - Malesia 4
AU - Australia 3
DO - Repubblica Dominicana 3
EG - Egitto 3
HU - Ungheria 3
MT - Malta 3
NG - Nigeria 3
PE - Perù 3
TH - Thailandia 3
TT - Trinidad e Tobago 3
BA - Bosnia-Erzegovina 2
BY - Bielorussia 2
DK - Danimarca 2
DZ - Algeria 2
KG - Kirghizistan 2
LB - Libano 2
NI - Nicaragua 2
PT - Portogallo 2
RS - Serbia 2
TN - Tunisia 2
AF - Afghanistan, Repubblica islamica di 1
AZ - Azerbaigian 1
CL - Cile 1
GE - Georgia 1
GP - Guadalupe 1
GR - Grecia 1
HR - Croazia 1
KH - Cambogia 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TM - Turkmenistan 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZW - Zimbabwe 1
Totale 12.174
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Città #
Chandler 546
Singapore 471
Jacksonville 460
San Jose 450
Council Bluffs 437
Ashburn 318
Hong Kong 300
Moscow 155
Wilmington 144
Dallas 138
Beijing 129
Boardman 125
The Dalles 123
Helsinki 115
Ann Arbor 98
Los Angeles 82
Dublin 79
Santa Clara 79
Ho Chi Minh City 72
New York 68
Hefei 67
Dong Ket 64
Kronberg 61
Dearborn 59
Lauterbourg 54
Southend 54
Hanoi 45
São Paulo 41
Woodbridge 41
Munich 40
Shanghai 36
Seattle 32
Phoenix 31
Brooklyn 29
Frankfurt am Main 28
Tokyo 27
Secaucus 25
Vienna 23
Brno 22
Pune 21
Brussels 19
Trento 19
Boston 18
Buffalo 18
Denver 18
Warsaw 18
Toronto 15
Turku 15
Mexico City 14
Chennai 13
Falls Church 13
Houston 13
London 13
Mountain View 13
Orem 13
Poplar 13
San Mateo 13
Atlanta 12
Da Nang 12
Miami 12
Montreal 12
Mumbai 12
Rome 12
Augusta 11
Rio de Janeiro 11
Stockholm 11
Falkenstein 10
Johannesburg 10
Redwood City 10
St Petersburg 10
Sunnyvale 10
Amsterdam 9
Groningen 9
Kyiv 9
Amman 8
Brasília 8
Chicago 8
Dhaka 8
Haiphong 8
Guangzhou 7
Leawood 7
Ottawa 7
Paris 7
Portland 7
Porto Alegre 7
Salt Lake City 7
Bologna 6
Charlotte 6
Hanover 6
Manchester 6
Milwaukee 6
Riyadh 6
Roubaix 6
Zanjan 6
Belo Horizonte 5
Caxias do Sul 5
Goiânia 5
Groot-ammers 5
Guarulhos 5
Nanjing 5
Totale 5.796
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 931
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 280
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 267
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 263
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 255
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 239
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 234
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 232
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 230
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 225
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 224
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 221
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 217
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 216
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 214
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 208
Highly sensitive detection of inorganic contamination 206
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 205
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 203
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 200
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 194
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 193
Vacancy-engineering implants for high boron activation in silicon on insulator 190
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 189
Dual carbon effect on electrical properties of high dose indium implants in silicon 187
Tappered walls via holes manufactured using DRIE variable isotropy process 187
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 187
Tapered walls via holes manufactured using DRIE variable isotropy process 186
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 185
Highly Sensitive Detection of Inorganic Contamination 185
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 183
ispettiva di sorveglianza 6-7 giugno 2012. 183
Characterization of Junction Activation and Deactivation Using non-Equilibrium 177
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 173
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 173
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 173
Tapered walls via holes manufactured using DRIE variable isotropy process 164
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 161
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 160
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 157
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 153
Multi-variate analysis of ToF-SIMS images of ancient ceramics 153
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 148
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 148
Nonconventional flash annealing on shallow indium implants in silicon 147
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 147
Suppression of boron interstitial clusters in SOI using vacancy engineering 146
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 146
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 145
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 144
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 144
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 144
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 139
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 138
ToF-SIMS and TXM analysis of ancient ceramics 137
Secondary ion mass spectrometry analysis applications on semiconductor materials 137
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 137
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 136
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 135
TOF-SIMS and TXM analysis of ancient ceramics 130
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 130
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 127
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 120
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 110
Totale 12.198
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Categoria #
all - tutte 47.291
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 47.291
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022354 0 8 4 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/20251.908 29 59 227 64 33 23 53 120 674 224 288 114
2025/20265.121 169 284 279 335 213 236 781 2.056 218 273 236 41
2026/2027329 203 126 0 0 0 0 0 0 0 0 0 0
Totale 12.198