IRIS Institutional Research Information System

Gennaro, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 3.276
EU - Europa 2.936
AS - Asia 1.429
SA - Sud America 364
AF - Africa 35
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 3
Totale 8.054
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Nazione #
US - Stati Uniti d'America 3.207
UA - Ucraina 954
RU - Federazione Russa 606
SG - Singapore 578
DE - Germania 337
BR - Brasile 325
CN - Cina 295
SE - Svezia 289
FI - Finlandia 177
HK - Hong Kong 173
GB - Regno Unito 143
IN - India 120
VN - Vietnam 105
NL - Olanda 86
IE - Irlanda 79
FR - Francia 55
IT - Italia 50
EE - Estonia 36
CA - Canada 34
IL - Israele 25
JP - Giappone 25
CZ - Repubblica Ceca 24
AT - Austria 23
MX - Messico 23
PL - Polonia 21
BE - Belgio 19
AR - Argentina 18
IR - Iran 18
ZA - Sudafrica 18
KR - Corea 16
ES - Italia 15
BD - Bangladesh 12
EU - Europa 11
LT - Lituania 10
IQ - Iraq 9
PK - Pakistan 9
MA - Marocco 8
AE - Emirati Arabi Uniti 7
EC - Ecuador 7
TR - Turchia 7
SA - Arabia Saudita 6
TW - Taiwan 5
BZ - Belize 4
JO - Giordania 4
PY - Paraguay 4
UZ - Uzbekistan 4
BO - Bolivia 3
KE - Kenya 3
MT - Malta 3
AU - Australia 2
BA - Bosnia-Erzegovina 2
BY - Bielorussia 2
CO - Colombia 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
HU - Ungheria 2
JM - Giamaica 2
PE - Perù 2
PH - Filippine 2
TT - Trinidad e Tobago 2
VE - Venezuela 2
GR - Grecia 1
ID - Indonesia 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
MY - Malesia 1
NG - Nigeria 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TH - Thailandia 1
TM - Turkmenistan 1
UY - Uruguay 1
Totale 8.054
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Città #
Chandler 546
Jacksonville 457
Singapore 414
Ashburn 256
Hong Kong 172
Moscow 153
Wilmington 144
Dallas 134
Boardman 125
Beijing 108
The Dalles 106
Ann Arbor 98
Helsinki 98
Dublin 78
Hefei 67
Santa Clara 67
Dong Ket 64
Kronberg 61
Dearborn 59
New York 58
Southend 54
Los Angeles 42
Woodbridge 41
Munich 40
São Paulo 37
Shanghai 33
Seattle 31
Phoenix 29
Brooklyn 27
Secaucus 24
Brno 22
Vienna 22
Tokyo 21
Pune 20
Brussels 19
Trento 19
Boston 16
Denver 15
Frankfurt am Main 15
Turku 15
Warsaw 14
Falls Church 13
London 13
Mountain View 13
San Mateo 13
Toronto 13
Houston 12
Miami 12
Augusta 11
Hanoi 11
Ho Chi Minh City 11
Mexico City 11
Rio de Janeiro 11
Rome 11
Atlanta 10
Buffalo 10
Chennai 10
Falkenstein 10
Redwood City 10
St Petersburg 10
Sunnyvale 10
Groningen 9
Johannesburg 9
Montreal 9
Poplar 8
Stockholm 8
Kyiv 7
Leawood 7
Mumbai 7
Bologna 6
Brasília 6
Hanover 6
Ottawa 6
Porto Alegre 6
Zanjan 6
Amsterdam 5
Belo Horizonte 5
Caxias do Sul 5
Chicago 5
Goiânia 5
Groot-ammers 5
Guangzhou 5
Guarulhos 5
Manchester 5
Orem 5
Portland 5
Salt Lake City 5
Amman 4
Campinas 4
Charlotte 4
Cheyenne 4
Gloucester 4
Nanjing 4
Norwalk 4
Paris 4
San Francisco 4
Uberlândia 4
Ardabil 3
Banqiao 3
Cologne 3
Totale 4.255
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 851
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 203
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 179
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 171
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 167
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 156
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 156
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 151
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 142
Highly sensitive detection of inorganic contamination 142
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 140
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 140
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 140
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 139
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 137
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 134
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 133
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 132
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 132
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 130
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 128
Highly Sensitive Detection of Inorganic Contamination 126
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 125
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 124
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 124
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 123
Dual carbon effect on electrical properties of high dose indium implants in silicon 119
Characterization of Junction Activation and Deactivation Using non-Equilibrium 119
Vacancy-engineering implants for high boron activation in silicon on insulator 118
Tappered walls via holes manufactured using DRIE variable isotropy process 118
ispettiva di sorveglianza 6-7 giugno 2012. 115
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 113
Tapered walls via holes manufactured using DRIE variable isotropy process 112
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 112
Tapered walls via holes manufactured using DRIE variable isotropy process 109
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 108
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 102
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 101
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 101
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 99
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 97
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 96
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 96
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 96
Multi-variate analysis of ToF-SIMS images of ancient ceramics 95
Suppression of boron interstitial clusters in SOI using vacancy engineering 94
Nonconventional flash annealing on shallow indium implants in silicon 93
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 93
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 92
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 91
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 91
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 90
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 90
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 87
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 87
ToF-SIMS and TXM analysis of ancient ceramics 87
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 86
Secondary ion mass spectrometry analysis applications on semiconductor materials 84
TOF-SIMS and TXM analysis of ancient ceramics 83
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 82
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 80
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 76
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 74
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 67
Totale 8.078
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Categoria #
all - tutte 38.725
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.725
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021447 0 0 0 0 0 12 90 5 11 164 46 119
2021/2022373 19 8 4 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/20251.908 29 59 227 64 33 23 53 120 674 224 288 114
2025/20261.330 169 284 279 335 213 50 0 0 0 0 0 0
Totale 8.078