IRIS Institutional Research Information System

Gennaro, Salvatore
 Distribuzione geografica
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Continente #
EU - Europa 2.767
NA - Nord America 2.644
AS - Asia 823
SA - Sud America 102
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 3
Totale 6.363
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Nazione #
US - Stati Uniti d'America 2.615
UA - Ucraina 946
RU - Federazione Russa 598
DE - Germania 308
SG - Singapore 304
SE - Svezia 281
FI - Finlandia 162
HK - Hong Kong 156
GB - Regno Unito 117
CN - Cina 110
BR - Brasile 94
IN - India 91
NL - Olanda 83
IE - Irlanda 78
VN - Vietnam 64
IT - Italia 44
FR - Francia 38
EE - Estonia 36
IL - Israele 24
CZ - Repubblica Ceca 22
AT - Austria 21
BE - Belgio 19
CA - Canada 19
IR - Iran 16
JP - Giappone 15
KR - Corea 15
EU - Europa 11
MA - Marocco 5
MX - Messico 5
TW - Taiwan 5
ZA - Sudafrica 5
BZ - Belize 4
TR - Turchia 4
BD - Bangladesh 3
LT - Lituania 3
PL - Polonia 3
AR - Argentina 2
AU - Australia 2
EC - Ecuador 2
ES - Italia 2
HU - Ungheria 2
IQ - Iraq 2
JO - Giordania 2
PH - Filippine 2
PY - Paraguay 2
UZ - Uzbekistan 2
AE - Emirati Arabi Uniti 1
BO - Bolivia 1
BY - Bielorussia 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
GR - Grecia 1
KE - Kenya 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
MY - Malesia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TM - Turkmenistan 1
UY - Uruguay 1
Totale 6.363
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Città #
Chandler 546
Jacksonville 457
Singapore 206
Hong Kong 155
Moscow 153
Ashburn 144
Wilmington 144
Boardman 114
Ann Arbor 98
Helsinki 98
The Dalles 95
Dublin 78
Dong Ket 64
Kronberg 61
Dearborn 59
Southend 54
Santa Clara 51
Woodbridge 41
New York 37
Beijing 35
Shanghai 33
Seattle 27
Brno 22
Phoenix 22
Vienna 21
Pune 20
Brussels 19
Los Angeles 18
Secaucus 18
Munich 17
Brooklyn 14
Trento 14
Falls Church 13
Mountain View 13
San Mateo 13
Toronto 12
Augusta 11
Frankfurt am Main 11
Tokyo 11
Falkenstein 10
Miami 10
Redwood City 10
Rome 10
Sunnyvale 10
Groningen 9
London 8
São Paulo 8
Buffalo 7
Houston 7
Leawood 7
Hanover 6
Ottawa 6
Zanjan 6
Bologna 5
Groot-ammers 5
Guangzhou 5
St Petersburg 5
Cheyenne 4
Gloucester 4
Nanjing 4
Norwalk 4
Ardabil 3
Banqiao 3
Belo Horizonte 3
Cologne 3
Goiânia 3
Hefei 3
North Bergen 3
Paris 3
Port Saint Lucie 3
Redmond 3
Rio de Janeiro 3
Saint Petersburg 3
Tappahannock 3
Amman 2
Amsterdam 2
Auburn Hills 2
Brasília 2
Campinas 2
Caxias do Sul 2
Chengdu 2
Guarapari 2
Hebei 2
Itaúna 2
Kunming 2
Manila 2
Mantova 2
Mexico City 2
Mysiadło 2
Nuremberg 2
Passaic 2
Portland 2
Porto Alegre 2
Sopron 2
Taipei 2
Tashkent 2
Utrecht 2
Verona 2
Xingtai 2
Çankaya 2
Totale 3.260
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 824
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 167
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 133
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 130
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 125
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 123
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 116
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 115
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 111
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 110
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 109
Highly sensitive detection of inorganic contamination 109
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 107
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 105
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 103
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 103
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 102
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 101
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 99
Vacancy-engineering implants for high boron activation in silicon on insulator 97
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 97
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 96
Characterization of Junction Activation and Deactivation Using non-Equilibrium 96
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 94
Highly Sensitive Detection of Inorganic Contamination 93
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 92
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 90
Tappered walls via holes manufactured using DRIE variable isotropy process 90
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 87
ispettiva di sorveglianza 6-7 giugno 2012. 87
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 86
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 86
Tapered walls via holes manufactured using DRIE variable isotropy process 85
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 84
Dual carbon effect on electrical properties of high dose indium implants in silicon 84
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 83
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 82
Tapered walls via holes manufactured using DRIE variable isotropy process 81
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 79
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 79
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 79
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 76
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 76
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 75
Nonconventional flash annealing on shallow indium implants in silicon 74
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 74
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 74
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 73
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 73
TOF-SIMS and TXM analysis of ancient ceramics 72
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 71
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 70
Multi-variate analysis of ToF-SIMS images of ancient ceramics 70
Suppression of boron interstitial clusters in SOI using vacancy engineering 68
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 67
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 67
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 66
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 65
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 65
ToF-SIMS and TXM analysis of ancient ceramics 65
Secondary ion mass spectrometry analysis applications on semiconductor materials 63
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 61
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 54
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 49
Totale 6.387
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Categoria #
all - tutte 32.161
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.161
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020142 0 0 0 0 0 0 0 0 0 0 73 69
2020/20211.454 806 6 69 58 68 12 90 5 11 164 46 119
2021/2022373 19 8 4 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/20251.547 29 59 227 64 33 23 53 120 674 224 41 0
Totale 6.387