IRIS Institutional Research Information System

Gennaro, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 5.298
EU - Europa 5.090
AS - Asia 2.153
SA - Sud America 439
AF - Africa 53
Continente sconosciuto - Info sul continente non disponibili 36
OC - Oceania 5
Totale 13.074
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Nazione #
US - Stati Uniti d'America 5.151
RU - Federazione Russa 2.472
UA - Ucraina 959
SG - Singapore 763
DE - Germania 398
CN - Cina 395
BR - Brasile 373
SE - Svezia 329
HK - Hong Kong 322
VN - Vietnam 268
FI - Finlandia 194
GB - Regno Unito 168
IN - India 141
FR - Francia 133
NL - Olanda 91
IE - Irlanda 80
CA - Canada 73
IT - Italia 71
JP - Giappone 38
EE - Estonia 37
MX - Messico 32
PL - Polonia 30
AR - Argentina 29
BD - Bangladesh 28
IL - Israele 26
AT - Austria 25
CZ - Repubblica Ceca 24
ES - Italia 23
ZA - Sudafrica 21
BE - Belgio 20
KR - Corea 20
IR - Iran 18
IQ - Iraq 17
SA - Arabia Saudita 15
PH - Filippine 14
PK - Pakistan 14
LT - Lituania 13
TR - Turchia 12
AE - Emirati Arabi Uniti 11
EU - Europa 11
MA - Marocco 11
JO - Giordania 9
CR - Costa Rica 8
EC - Ecuador 8
JM - Giamaica 8
TW - Taiwan 7
CO - Colombia 6
UZ - Uzbekistan 6
VE - Venezuela 6
GT - Guatemala 5
ID - Indonesia 5
MY - Malesia 5
PE - Perù 5
PY - Paraguay 5
SC - Seychelles 5
TT - Trinidad e Tobago 5
AU - Australia 4
BO - Bolivia 4
BZ - Belize 4
HN - Honduras 4
KE - Kenya 4
DO - Repubblica Dominicana 3
EG - Egitto 3
HU - Ungheria 3
LB - Libano 3
MT - Malta 3
NG - Nigeria 3
NI - Nicaragua 3
TH - Thailandia 3
BA - Bosnia-Erzegovina 2
BY - Bielorussia 2
CL - Cile 2
DK - Danimarca 2
DZ - Algeria 2
KG - Kirghizistan 2
PT - Portogallo 2
RS - Serbia 2
TN - Tunisia 2
AF - Afghanistan, Repubblica islamica di 1
AM - Armenia 1
AZ - Azerbaigian 1
GE - Georgia 1
GP - Guadalupe 1
GR - Grecia 1
HR - Croazia 1
KH - Cambogia 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TM - Turkmenistan 1
Totale 13.047
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Città #
Chandler 546
San Jose 510
Singapore 471
Jacksonville 464
Council Bluffs 455
Ashburn 330
Hong Kong 303
Moscow 155
Dallas 147
Wilmington 145
Beijing 129
Boardman 125
The Dalles 124
Helsinki 115
Ann Arbor 98
Los Angeles 98
Santa Clara 89
Dublin 79
New York 77
Ho Chi Minh City 72
Hefei 67
Dong Ket 64
Kronberg 61
Dearborn 59
Lauterbourg 54
Southend 54
Hanoi 45
Munich 44
São Paulo 41
Woodbridge 41
Phoenix 40
Shanghai 36
Buffalo 35
Seattle 35
Brooklyn 34
Frankfurt am Main 29
Tokyo 29
Secaucus 25
Vienna 23
Boston 22
Brno 22
Lawrenceville 21
Pune 21
Tampa 21
Brussels 19
Denver 19
Trento 19
Warsaw 19
North Bergen 18
Toronto 17
Atlanta 16
Houston 16
Montreal 16
Chicago 15
Miami 15
Turku 15
Mexico City 14
San Mateo 14
Chennai 13
Falls Church 13
London 13
Mountain View 13
Mumbai 13
Orem 13
Poplar 13
Rome 13
Da Nang 12
Rio de Janeiro 12
Augusta 11
Charlotte 11
Stockholm 11
Brasília 10
Falkenstein 10
Johannesburg 10
Redwood City 10
St Petersburg 10
Sunnyvale 10
Amsterdam 9
Garland 9
Groningen 9
Kyiv 9
North Easton 9
Portland 9
The Bronx 9
Amman 8
Dhaka 8
Haiphong 8
Ottawa 8
Salt Lake City 8
Guangzhou 7
Leawood 7
Manchester 7
Milwaukee 7
Paris 7
Philadelphia 7
Porto Alegre 7
Bologna 6
Cleveland 6
Hanover 6
Kingston 6
Totale 6.084
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 948
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 305
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 287
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 280
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 275
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 252
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 248
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 247
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 243
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 240
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 239
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 238
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 234
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 229
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 228
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 223
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 221
Highly sensitive detection of inorganic contamination 219
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 214
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 213
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 208
Vacancy-engineering implants for high boron activation in silicon on insulator 206
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 205
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 204
Tappered walls via holes manufactured using DRIE variable isotropy process 203
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 202
Dual carbon effect on electrical properties of high dose indium implants in silicon 201
Tapered walls via holes manufactured using DRIE variable isotropy process 201
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 201
Highly Sensitive Detection of Inorganic Contamination 199
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 197
ispettiva di sorveglianza 6-7 giugno 2012. 193
Characterization of Junction Activation and Deactivation Using non-Equilibrium 190
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 185
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 184
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 184
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 180
Tapered walls via holes manufactured using DRIE variable isotropy process 177
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 173
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 170
Multi-variate analysis of ToF-SIMS images of ancient ceramics 166
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 165
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 162
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 162
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 161
Suppression of boron interstitial clusters in SOI using vacancy engineering 160
Nonconventional flash annealing on shallow indium implants in silicon 158
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 157
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 157
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 157
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 156
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 154
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 152
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 150
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 149
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 149
ToF-SIMS and TXM analysis of ancient ceramics 148
Secondary ion mass spectrometry analysis applications on semiconductor materials 146
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 145
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 143
TOF-SIMS and TXM analysis of ancient ceramics 142
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 136
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 133
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 120
Totale 13.074
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Categoria #
all - tutte 50.307
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.307
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022342 0 0 0 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/20251.908 29 59 227 64 33 23 53 120 674 224 288 114
2025/20265.121 169 284 279 335 213 236 781 2.056 218 273 236 41
2026/20271.205 203 203 377 422 0 0 0 0 0 0 0 0
Totale 13.074