Gennaro, Salvatore
 Distribuzione geografica
Continente #
NA - Nord America 2.321
EU - Europa 2.024
AS - Asia 470
Continente sconosciuto - Info sul continente non disponibili 11
AF - Africa 2
OC - Oceania 2
SA - Sud America 1
Totale 4.831
Nazione #
US - Stati Uniti d'America 2.312
UA - Ucraina 945
DE - Germania 287
SE - Svezia 280
FI - Finlandia 148
GB - Regno Unito 105
HK - Hong Kong 105
IN - India 89
CN - Cina 87
IE - Irlanda 78
VN - Vietnam 64
SG - Singapore 56
FR - Francia 38
IT - Italia 36
RU - Federazione Russa 24
IL - Israele 23
CZ - Repubblica Ceca 22
AT - Austria 20
NL - Olanda 19
IR - Iran 16
BE - Belgio 15
KR - Corea 15
JP - Giappone 12
EU - Europa 11
CA - Canada 8
AU - Australia 2
ES - Italia 2
PL - Polonia 2
TW - Taiwan 2
ZA - Sudafrica 2
BR - Brasile 1
GR - Grecia 1
MX - Messico 1
MY - Malesia 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 4.831
Città #
Chandler 546
Jacksonville 457
Wilmington 144
Ashburn 133
Boardman 104
Hong Kong 104
Ann Arbor 98
Helsinki 84
Dublin 78
Dong Ket 64
Kronberg 61
Dearborn 59
Southend 54
Singapore 47
Woodbridge 41
Beijing 34
New York 34
Shanghai 30
Seattle 27
Brno 22
Phoenix 22
Pune 20
Vienna 20
Secaucus 17
Brussels 15
Brooklyn 14
Trento 14
Falls Church 13
Mountain View 13
Munich 13
San Mateo 13
Los Angeles 12
Augusta 11
Redwood City 10
Sunnyvale 10
Groningen 9
Santa Clara 9
Tokyo 8
Houston 7
Leawood 7
Rome 7
Toronto 7
Hanover 6
Zanjan 6
Bologna 5
Buffalo 5
Frankfurt am Main 5
Groot-ammers 5
St Petersburg 5
Cheyenne 4
Gloucester 4
Guangzhou 4
Nanjing 4
Norwalk 4
Ardabil 3
Cologne 3
Falkenstein 3
Hefei 3
North Bergen 3
Paris 3
Port Saint Lucie 3
Redmond 3
Saint Petersburg 3
Tappahannock 3
Auburn Hills 2
Chengdu 2
Hebei 2
Kunming 2
Mysiadło 2
Nuremberg 2
Passaic 2
Portland 2
Taipei 2
Utrecht 2
Aberdeen 1
Andover 1
Barcelona 1
Brandenburg 1
Bratislava 1
Central District 1
Chiba 1
Chieti 1
Costa Mesa 1
Des Moines 1
Elk Grove Village 1
Fuzhou 1
Gawler 1
Houx 1
Jerusalem 1
Kish 1
Landshut 1
Liverpool 1
Mainz 1
Melbourne 1
Mexico City 1
Moscow 1
Ningbo 1
Otemachi 1
Perry 1
Petaling Jaya 1
Totale 2.625
Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 802
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 133
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 105
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 101
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 99
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 83
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 83
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 82
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 81
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 80
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 79
Vacancy-engineering implants for high boron activation in silicon on insulator 79
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 76
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 76
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 76
Highly sensitive detection of inorganic contamination 74
Characterization of Junction Activation and Deactivation Using non-Equilibrium 73
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 73
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 72
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 72
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 69
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 68
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 67
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 67
Highly Sensitive Detection of Inorganic Contamination 67
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 66
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 65
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 64
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 64
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 64
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 63
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 63
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 63
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 62
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 61
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 60
Tappered walls via holes manufactured using DRIE variable isotropy process 60
Tapered walls via holes manufactured using DRIE variable isotropy process 60
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 59
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 58
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 58
Dual carbon effect on electrical properties of high dose indium implants in silicon 57
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 56
Tapered walls via holes manufactured using DRIE variable isotropy process 56
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 56
TOF-SIMS and TXM analysis of ancient ceramics 55
Nonconventional flash annealing on shallow indium implants in silicon 53
Suppression of boron interstitial clusters in SOI using vacancy engineering 53
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 53
ToF-SIMS and TXM analysis of ancient ceramics 52
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 51
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 51
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 50
Multi-variate analysis of ToF-SIMS images of ancient ceramics 50
Secondary ion mass spectrometry analysis applications on semiconductor materials 48
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 47
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 47
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 47
ispettiva di sorveglianza 6-7 giugno 2012. 46
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 44
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 43
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 42
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 36
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 34
Totale 4.854
Categoria #
all - tutte 22.802
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.802


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020692 67 66 6 4 82 47 79 6 79 114 73 69
2020/20211.454 806 6 69 58 68 12 90 5 11 164 46 119
2021/2022373 19 8 4 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/202514 14 0 0 0 0 0 0 0 0 0 0 0
Totale 4.854