IRIS Institutional Research Information System

Gennaro, Salvatore
 Distribuzione geografica
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Continente #
EU - Europa 2.783
NA - Nord America 2.692
AS - Asia 848
SA - Sud America 156
AF - Africa 15
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 3
Totale 6.508
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Nazione #
US - Stati Uniti d'America 2.659
UA - Ucraina 946
RU - Federazione Russa 598
SG - Singapore 317
DE - Germania 313
SE - Svezia 282
FI - Finlandia 165
HK - Hong Kong 159
BR - Brasile 148
GB - Regno Unito 120
CN - Cina 110
IN - India 95
NL - Olanda 85
IE - Irlanda 78
VN - Vietnam 64
IT - Italia 44
FR - Francia 38
EE - Estonia 36
IL - Israele 24
CZ - Repubblica Ceca 22
AT - Austria 21
CA - Canada 20
BE - Belgio 19
IR - Iran 16
JP - Giappone 16
KR - Corea 15
EU - Europa 11
MX - Messico 8
MA - Marocco 6
TR - Turchia 5
TW - Taiwan 5
ZA - Sudafrica 5
BD - Bangladesh 4
BZ - Belize 4
ES - Italia 3
IQ - Iraq 3
LT - Lituania 3
PL - Polonia 3
AR - Argentina 2
AU - Australia 2
EC - Ecuador 2
HU - Ungheria 2
JO - Giordania 2
PH - Filippine 2
PY - Paraguay 2
UZ - Uzbekistan 2
AE - Emirati Arabi Uniti 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
BY - Bielorussia 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
GR - Grecia 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MY - Malesia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TH - Thailandia 1
TM - Turkmenistan 1
UY - Uruguay 1
Totale 6.508
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Città #
Chandler 546
Jacksonville 457
Singapore 219
Hong Kong 158
Moscow 153
Ashburn 144
Wilmington 144
Boardman 114
Ann Arbor 98
Helsinki 98
The Dalles 95
Dublin 78
Dong Ket 64
Kronberg 61
Dearborn 59
Southend 54
Santa Clara 52
Woodbridge 41
New York 38
Beijing 35
Shanghai 33
Seattle 28
Brno 22
Los Angeles 22
Munich 22
Phoenix 22
Vienna 21
Pune 20
Brussels 19
Brooklyn 18
Secaucus 18
Trento 14
Falls Church 13
Mountain View 13
San Mateo 13
São Paulo 13
Tokyo 12
Toronto 12
Augusta 11
Frankfurt am Main 11
Falkenstein 10
Miami 10
Redwood City 10
Rome 10
Sunnyvale 10
Groningen 9
London 9
Buffalo 7
Houston 7
Leawood 7
Hanover 6
Ottawa 6
Zanjan 6
Bologna 5
Groot-ammers 5
Guangzhou 5
St Petersburg 5
Amsterdam 4
Belo Horizonte 4
Boston 4
Caxias do Sul 4
Cheyenne 4
Gloucester 4
Goiânia 4
Mexico City 4
Nanjing 4
Norwalk 4
Ardabil 3
Banqiao 3
Campinas 3
Chennai 3
Cologne 3
Hefei 3
North Bergen 3
Paris 3
Port Saint Lucie 3
Redmond 3
Rio de Janeiro 3
Saint Petersburg 3
San Francisco 3
Tappahannock 3
Turku 3
Amman 2
Auburn Hills 2
Brasília 2
Charlotte 2
Chengdu 2
Cuiabá 2
Fortaleza 2
Guarapari 2
Hebei 2
Itaquaquecetuba 2
Itaúna 2
Juiz de Fora 2
Kunming 2
Manila 2
Mantova 2
Mumbai 2
Mysiadło 2
Nuremberg 2
Totale 3.313
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 826
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 171
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 136
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 132
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 128
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 127
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 118
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 118
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 116
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 113
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 111
Highly sensitive detection of inorganic contamination 111
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 109
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 106
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 105
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 105
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 105
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 103
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 103
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 99
Characterization of Junction Activation and Deactivation Using non-Equilibrium 99
Vacancy-engineering implants for high boron activation in silicon on insulator 98
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 98
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 96
Highly Sensitive Detection of Inorganic Contamination 96
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 94
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 93
Tappered walls via holes manufactured using DRIE variable isotropy process 92
ispettiva di sorveglianza 6-7 giugno 2012. 91
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 89
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 89
Dual carbon effect on electrical properties of high dose indium implants in silicon 87
Tapered walls via holes manufactured using DRIE variable isotropy process 87
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 87
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 87
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 86
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 85
Tapered walls via holes manufactured using DRIE variable isotropy process 82
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 81
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 80
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 80
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 78
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 78
Nonconventional flash annealing on shallow indium implants in silicon 77
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 77
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 75
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 75
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 75
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 74
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 73
TOF-SIMS and TXM analysis of ancient ceramics 73
Multi-variate analysis of ToF-SIMS images of ancient ceramics 73
Suppression of boron interstitial clusters in SOI using vacancy engineering 72
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 72
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 70
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 68
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 68
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 67
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 66
ToF-SIMS and TXM analysis of ancient ceramics 66
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 65
Secondary ion mass spectrometry analysis applications on semiconductor materials 64
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 56
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 51
Totale 6.532
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Categoria #
all - tutte 32.729
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.729
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020142 0 0 0 0 0 0 0 0 0 0 73 69
2020/20211.454 806 6 69 58 68 12 90 5 11 164 46 119
2021/2022373 19 8 4 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/20251.692 29 59 227 64 33 23 53 120 674 224 186 0
Totale 6.532