IRIS Institutional Research Information System

Gennaro, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 2.475
EU - Europa 2.049
AS - Asia 672
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 3
SA - Sud America 3
AF - Africa 2
Totale 5.215
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Nazione #
US - Stati Uniti d'America 2.458
UA - Ucraina 945
DE - Germania 292
SE - Svezia 281
SG - Singapore 194
FI - Finlandia 152
HK - Hong Kong 143
GB - Regno Unito 113
CN - Cina 95
IN - India 90
IE - Irlanda 78
VN - Vietnam 64
FR - Francia 38
IT - Italia 37
IL - Israele 24
RU - Federazione Russa 24
CZ - Repubblica Ceca 22
AT - Austria 20
NL - Olanda 19
BE - Belgio 17
IR - Iran 16
JP - Giappone 15
KR - Corea 15
CA - Canada 14
EU - Europa 11
TW - Taiwan 5
PL - Polonia 3
AU - Australia 2
BD - Bangladesh 2
BZ - Belize 2
ES - Italia 2
HU - Ungheria 2
PH - Filippine 2
ZA - Sudafrica 2
AE - Emirati Arabi Uniti 1
BO - Bolivia 1
BR - Brasile 1
BY - Bielorussia 1
EC - Ecuador 1
GR - Grecia 1
LA - Repubblica Popolare Democratica del Laos 1
MX - Messico 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TM - Turkmenistan 1
UZ - Uzbekistan 1
Totale 5.215
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Città #
Chandler 546
Jacksonville 457
Singapore 166
Wilmington 144
Hong Kong 142
Ashburn 135
Boardman 114
Ann Arbor 98
Helsinki 88
Dublin 78
Dong Ket 64
Kronberg 61
Dearborn 59
Southend 54
Santa Clara 43
Woodbridge 41
New York 37
Beijing 34
Shanghai 30
Seattle 27
Brno 22
Phoenix 22
Pune 20
Vienna 20
Los Angeles 18
Secaucus 18
Brussels 17
Munich 16
Brooklyn 14
Trento 14
Falls Church 13
Mountain View 13
San Mateo 13
Augusta 11
Tokyo 11
Miami 10
Redwood City 10
Sunnyvale 10
Groningen 9
Rome 8
Toronto 8
Frankfurt am Main 7
Houston 7
Leawood 7
Buffalo 6
Hanover 6
Zanjan 6
Bologna 5
Groot-ammers 5
Guangzhou 5
Ottawa 5
St Petersburg 5
Cheyenne 4
Gloucester 4
London 4
Nanjing 4
Norwalk 4
Ardabil 3
Banqiao 3
Cologne 3
Falkenstein 3
Hefei 3
North Bergen 3
Paris 3
Port Saint Lucie 3
Redmond 3
Saint Petersburg 3
Tappahannock 3
Auburn Hills 2
Chengdu 2
Hebei 2
Kunming 2
Manila 2
Mysiadło 2
Nuremberg 2
Passaic 2
Portland 2
Sopron 2
Taipei 2
Utrecht 2
Aberdeen 1
Andover 1
Ashgabat 1
Auckland 1
Barcelona 1
Brandenburg 1
Bratislava 1
Central District 1
Chiba 1
Chieti 1
Costa Mesa 1
Delhi 1
Des Moines 1
Dubai 1
Elk Grove Village 1
Fuzhou 1
Gawler 1
Houx 1
Huilong 1
Jerusalem 1
Totale 2.876
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Nome #
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 805
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 145
Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 116
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon 107
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 105
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 104
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 96
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 88
Highly sensitive detection of inorganic contamination 88
Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si” 87
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study 87
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 86
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 85
Vacancy-engineering implants for high boron activation in silicon on insulator 83
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 82
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 82
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 81
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 80
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 80
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 78
Characterization of Junction Activation and Deactivation Using non-Equilibrium 77
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 76
Quality management system and accreditation of measurements in a surface science laboratory. The case study of MiNALab. 75
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 73
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 73
Highly Sensitive Detection of Inorganic Contamination 73
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 72
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 71
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. 69
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 68
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 67
Microfabrication of MOS H2 sensors based on Pd-gate deposited by pulsed laser ablation 67
ispettiva di sorveglianza 6-7 giugno 2012. 67
High performance n+/p and p+/n germanium diodes at low-temperature activation annealing 66
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 65
Tappered walls via holes manufactured using DRIE variable isotropy process 65
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 65
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 64
Dual carbon effect on electrical properties of high dose indium implants in silicon 63
UNUSUAL FE-RICH FRAMBOIDS FROM DEVONIAN CARBONATE MOUNDS (SAHARA DESERT, MOROCCO) INVESTIGATED BY HR-SEM AND TOF-SIMS: FOSSIL ANALOGUES OF MOA-SRB CONSORTIA? 63
Tapered walls via holes manufactured using DRIE variable isotropy process 63
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 62
UNUSUAL FE-RICH FRAMBOIDS from DEVONIAN CARBONATE MOUNDS (HAMAR LAGHDAD RIDGE, MOROCCO) INVESTIGATED BY HR-SEM and ToF-SIMS: FOSSIL OAM-SRB CONSORTIA ANALOGUES? 61
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon 60
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 60
Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon 60
Tapered walls via holes manufactured using DRIE variable isotropy process 59
TOF-SIMS and TXM analysis of ancient ceramics 59
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 58
Nonconventional flash annealing on shallow indium implants in silicon 57
Suppression of boron interstitial clusters in SOI using vacancy engineering 56
ToF-SIMS and TXM analysis of ancient ceramics 55
Structural Analysis and Depth Profiling of Nanometric SiO2/SRO Multilayers 55
Microcapillary-like structures prompted by Phospholipases A2 Activation in Endothelial cells and pericytes co-cultures on a polysiloxane thin film 54
Iron-framboids in the hydrocarbon-related Middle Devonian Hollard Mound of the Anti-Atlas mountain range in Morocco: Evidence of potential microbial biosignatures 54
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films 52
Multi-variate analysis of ToF-SIMS images of ancient ceramics 52
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 51
Secondary ion mass spectrometry analysis applications on semiconductor materials 49
Nanostructure and phase imaging of ancient ceramics using full field hard x-ray microscopy 48
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants 45
Observation of Point defect injection from electrical de-activation of Arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing 45
Quality management system and accreditation of measurements on scientific high-level technological laboratory. The case study of MiNALab. 40
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, 39
Totale 5.238
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Categoria #
all - tutte 26.286
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.286
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020549 0 0 0 0 82 47 79 6 79 114 73 69
2020/20211.454 806 6 69 58 68 12 90 5 11 164 46 119
2021/2022373 19 8 4 43 20 11 15 71 24 24 41 93
2022/20231.051 29 80 20 182 86 169 5 87 246 86 47 14
2023/2024773 113 39 60 24 63 101 39 88 25 110 10 101
2024/2025398 29 59 227 64 19 0 0 0 0 0 0 0
Totale 5.238