A novel aspect of the carbon effect on indium electrical activation in silicon is presented. It is shown that, depending on the thermal budget used during annealing, the presence of carbon can increase or inhibit the indium electrical activation. The different behaviour is explained in terms of the Ins–Cs couple formation for low thermal budgets and carbon precipitation for high thermal budgets.

Dual carbon effect on electrical properties of high dose indium implants in silicon

Gennaro, Salvatore;
2005

Abstract

A novel aspect of the carbon effect on indium electrical activation in silicon is presented. It is shown that, depending on the thermal budget used during annealing, the presence of carbon can increase or inhibit the indium electrical activation. The different behaviour is explained in terms of the Ins–Cs couple formation for low thermal budgets and carbon precipitation for high thermal budgets.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/18752
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