The trend for decreasing geometries within CMOS architecture is driving the need for ever shallower, highly doped, low resistivity layers in silicon. The conventional dopant of choice, boron, as a result of its light mass requires that implant energies be ever reduced to meet the demands of these shallow junctions, with the inevitable effect on throughput due to implanter beam current limitations. In this paper we investigate using secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP) and Hall effect measurements, the alternate p-type dopant species of Ga and its behaviour in the energy range 2–5 keV, implanted into both single crystal Si and pre-amorphised material.

Ultra shallow Junction Formation and Dopant Activation Study of Ga Implanted Si”

Gennaro, Salvatore;
2005

Abstract

The trend for decreasing geometries within CMOS architecture is driving the need for ever shallower, highly doped, low resistivity layers in silicon. The conventional dopant of choice, boron, as a result of its light mass requires that implant energies be ever reduced to meet the demands of these shallow junctions, with the inevitable effect on throughput due to implanter beam current limitations. In this paper we investigate using secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP) and Hall effect measurements, the alternate p-type dopant species of Ga and its behaviour in the energy range 2–5 keV, implanted into both single crystal Si and pre-amorphised material.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/18754
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