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Gennaro, Salvatore

Gennaro, Salvatore  

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Titolo Data di pubblicazione Autore(i) File
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 1-gen-2006 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing 1-gen-2006 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D'Acapito; R., Doherty; M. A., Foad
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers 1-gen-2012 Demenev, Evgeny; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; E., Hourdakis; A. G., Nassiopoulou; M. A., Reading; J. A., van den Berg
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application 1-gen-2012 M., Otto; S., Rioufrays; A., Favre; A., Leibold; R., Altmann; Gennaro, Salvatore; Dell'Anna, Rossana; Canteri, Roberto; L., Pfitzner
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 1-gen-2007 Justin, Hamilton; K. J., Kirkby; Nick, Cowern; Eric, Collart; Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; A., Parisini
Characterization of Junction Activation and Deactivation Using non-Equilibrium 1-gen-2009 Bersani, Massimo; Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; M. A., Sahiner; S. P., Kelty; M., Kah; K. J., Kirkby; R., Doherty; M. A., Foad; Meirer, Florian; C., Streli; J. C., Woicik; P., Piane
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 1-gen-2009 Bersani, Massimo; Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; Mehmet, Sahiner; Stephen, Kelty; Max, Kah; K. J., Kirkby; Roisin, Doherty; Majeed, Foad; Meirer, Florian; Christina, Streli; Joseph, Woicik; P., Pianetta
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 1-gen-2008 Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; Mehmet, Sahiner; Stephen, Kelty; Roisin, Doherty; Majeed, Foad; Max, Kah; K. J., Kirkby; Joseph, Woicik; P., Pianetta
Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans 1-gen-2006 J., Sharp; N., Cowern; R., Webb; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; K. J., Kirkby
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 1-gen-2009 Giubertoni, Damiano; Pepponi, Giancarlo; M. A., Sahiner; S. P., Kelty; M., Kah; K. J., Kirkby; Meirer, Florian; Gennaro, Salvatore; R., Doherty; M. A., Foad; J. C., Woicik; C., Streli; Bersani, Massimo; P., Pianetta
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 1-gen-2010 Giubertoni, Damiano; Pepponi, Giancarlo; Mehmet Alper, Sahiner; Stephen P., Kelty; Gennaro, Salvatore; Bersani, Massimo; Max, Kah; Karen J., Kirkby; Roisin, Doherty; Majeed A., Foad; Meirer, Florian; C., Streli; Joseph C., Woicik; Piero, Pianetta
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing 1-gen-2006 J., Sharp; N., Cowern; R., Webb; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; K. J., Kirkby
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans 1-gen-2006 J., Sharp; N., Cowern; R., Webb; K. J., Kirkby; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; F., Cristiano; P., Fazzini
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 1-gen-2011 Iacob, Erica; Barozzi, Mario; Demenev, Evgeny; Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo
Development of nano-roughness under SIMS ion sputtering of germanium surfaces 1-gen-2013 Iacob, Erica; Demenev, Evgeny; Giubertoni, Damiano; Barozzi, Mario; Gennaro, Salvatore; Bersani, Massimo
Diffusion of indium implanted in silicon: the effect of the pre-amorphisation treatment and of the presence of carbon 1-gen-2005 Gennaro, Salvatore; Barozzi, Mario; Bersani, Massimo; B. J., Sealy; R., Gwilliam
Dual carbon effect on electrical properties of high dose indium implants in silicon 1-gen-2005 Gennaro, Salvatore; B. J., Sealy; R. M., Gwilliam
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings 1-gen-2017 Onorati, Elena; Iacob, Erica; Bartali, Ruben; Barozzi, Mario; Gennaro, Salvatore; Bersani, Massimo
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing 1-gen-2012 Meirer, Florian; Demenev, Evgeny; Giubertoni, Damiano; Gennaro, Salvatore; Vanzetti, Lia Emanuela; Pepponi, Giancarlo; Bersani, Massimo; M. A., Sahiner; G., Steinhauser; M. A., Foad; J. C., Woicik; A., Mehta; P., Pianetta
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon 1-gen-2012 Meirer, Florian; Giubertoni, Damiano; Demenev, Evgeny; Vanzetti, Lia Emanuela; Gennaro, Salvatore; Fedrizzi, Michele; Pepponi, Giancarlo; A., Mehta; P., Pianetta; G., Steinhauser; V., Vishwanath; M., Foad; Bersani, Massimo