Shallow Indium implants and Indium-Carbon co-implants have been subjected to flash anneals and a combination of furnace treatments in order to evaluate the electrical properties of the implant and differentiate the behavior between low temperature and high temperature ultra fast thermal treatments. It is found that by using “flash” anneals, higher levels of electrical activation are achievable for the given experimental conditions. This behavior is related to the indium dose and to the dopant diffusion within the layer and its interaction with the carbon.

The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon

Gennaro, Salvatore;Giubertoni, Damiano;Bersani, Massimo;Anderle, Mariano
2006

Abstract

Shallow Indium implants and Indium-Carbon co-implants have been subjected to flash anneals and a combination of furnace treatments in order to evaluate the electrical properties of the implant and differentiate the behavior between low temperature and high temperature ultra fast thermal treatments. It is found that by using “flash” anneals, higher levels of electrical activation are achievable for the given experimental conditions. This behavior is related to the indium dose and to the dopant diffusion within the layer and its interaction with the carbon.
9780735403666
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/12948
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