Sfoglia per Autore
Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator
2006-01-01 J., Hamilton; E., Collart; Bersani, Massimo; Giubertoni, Damiano; M., Kah; N., Cowern; K. J., Kirkby
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing
2006-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D'Acapito; R., Doherty; M. A., Foad
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study,
2006-01-01 Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; Anderle, Mariano; R., Grisenti; M., Werner; J., van den Berg
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses
2006-01-01 Vanzetti, Lia Emanuela; Barozzi, Mario; Giubertoni, Damiano; C., Kompocholis; Bagolini, Alvise; Bellutti, Pierluigi
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon
2006-01-01 Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; J., Foggiato; W. S., Yoo; R., Gwilliam; Anderle, Mariano
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic
2006-01-01 Barozzi, Mario; Giubertoni, Damiano; S., Pederzoli; Anderle, Mariano; Iacob, Erica; Bersani, Massimo
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants
2006-01-01 Giubertoni, Damiano; Bersani, Massimo; Barozzi, Mario; S., Pederzoli; Iacob, Erica; J., van den Berg; M., Werner
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing
2006-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage
2006-01-01 Bersani, Massimo; Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; M., Anderle
Diffusion and activation of ultrashallow B implants in silicon on insulator. End-of-range defect dissolution and the buried Si/SiO2 interface
2006-01-01 J., Hamilton; N., Cowern; J., Sharp; K. J., Kirkby; E., Collart; B., Colombeau; Bersani, Massimo; Giubertoni, Damiano; A., Parisini
Vacancy-engineering implants for high boron activation in silicon on insulator
2006-01-01 A. J., Smith; N. E. B., Cowern; R., Gwilliam; B. J., Sealy; Benjamin, Colombeau; Eric, Collart; Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; Barozzi, Mario
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants
2006-01-01 A. J., Smith; N. E. B., Cowern; B., Colombeau; R., Gwilliam; B. J., Sealy; E. J. H., Collart; Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; Barozzi, Mario
Nonconventional flash annealing on shallow indium implants in silicon
2006-01-01 Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; J., Foggiato; W. S., Yoo; R., Gwilliam
Arsenic uphill diffusion during shallow junction formation
2006-01-01 M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario
Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
2006-01-01 J., Hamilton; B., Colombeau; J., Sharp; N., Cowern; K. J., Kirkby; E., Collart; Bersani, Massimo; Giubertoni, Damiano
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans
2006-01-01 J., Sharp; N., Cowern; R., Webb; K. J., Kirkby; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; F., Cristiano; P., Fazzini
Role of the Si/SiO2 interface during dopant diffusion in thin silicon on insulator layers
2006-01-01 G., Mannino; A., La Magna; V., Privitera; Giubertoni, Damiano; Bersani, Massimo
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing
2006-01-01 J., Sharp; N., Cowern; R., Webb; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; K. J., Kirkby
Si ultra shallow junctions dopant profiling with ADF-STEM
2007-01-01 A., Parisini; Giubertoni, Damiano; Bersani, Massimo; Vittorio, Morandi; Pier Giorgio, Merli; Jaap van den, Berg
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing"
2007-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; M. A., Foad; R., Doherty; P., Pianetta; J. C., Woicik; M. A., Sahiner
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator | 1-gen-2006 | J., Hamilton; E., Collart; Bersani, Massimo; Giubertoni, Damiano; M., Kah; N., Cowern; K. J., Kirkby | |
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing | 1-gen-2006 | Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D'Acapito; R., Doherty; M. A., Foad | |
Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study, | 1-gen-2006 | Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; Anderle, Mariano; R., Grisenti; M., Werner; J., van den Berg | |
Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses | 1-gen-2006 | Vanzetti, Lia Emanuela; Barozzi, Mario; Giubertoni, Damiano; C., Kompocholis; Bagolini, Alvise; Bellutti, Pierluigi | |
The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co-Implants in Silicon | 1-gen-2006 | Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; J., Foggiato; W. S., Yoo; R., Gwilliam; Anderle, Mariano | |
Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic | 1-gen-2006 | Barozzi, Mario; Giubertoni, Damiano; S., Pederzoli; Anderle, Mariano; Iacob, Erica; Bersani, Massimo | |
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants | 1-gen-2006 | Giubertoni, Damiano; Bersani, Massimo; Barozzi, Mario; S., Pederzoli; Iacob, Erica; J., van den Berg; M., Werner | |
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing | 1-gen-2006 | Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad | |
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage | 1-gen-2006 | Bersani, Massimo; Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; M., Anderle | |
Diffusion and activation of ultrashallow B implants in silicon on insulator. End-of-range defect dissolution and the buried Si/SiO2 interface | 1-gen-2006 | J., Hamilton; N., Cowern; J., Sharp; K. J., Kirkby; E., Collart; B., Colombeau; Bersani, Massimo; Giubertoni, Damiano; A., Parisini | |
Vacancy-engineering implants for high boron activation in silicon on insulator | 1-gen-2006 | A. J., Smith; N. E. B., Cowern; R., Gwilliam; B. J., Sealy; Benjamin, Colombeau; Eric, Collart; Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; Barozzi, Mario | |
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants | 1-gen-2006 | A. J., Smith; N. E. B., Cowern; B., Colombeau; R., Gwilliam; B. J., Sealy; E. J. H., Collart; Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; Barozzi, Mario | |
Nonconventional flash annealing on shallow indium implants in silicon | 1-gen-2006 | Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo; J., Foggiato; W. S., Yoo; R., Gwilliam | |
Arsenic uphill diffusion during shallow junction formation | 1-gen-2006 | M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario | |
Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction | 1-gen-2006 | J., Hamilton; B., Colombeau; J., Sharp; N., Cowern; K. J., Kirkby; E., Collart; Bersani, Massimo; Giubertoni, Damiano | |
Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scans | 1-gen-2006 | J., Sharp; N., Cowern; R., Webb; K. J., Kirkby; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; F., Cristiano; P., Fazzini | |
Role of the Si/SiO2 interface during dopant diffusion in thin silicon on insulator layers | 1-gen-2006 | G., Mannino; A., La Magna; V., Privitera; Giubertoni, Damiano; Bersani, Massimo | |
Deactivation of Ultra Shallow B and BF2 Profiles after Non-melt Laser Annealing | 1-gen-2006 | J., Sharp; N., Cowern; R., Webb; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; M., Foad; K. J., Kirkby | |
Si ultra shallow junctions dopant profiling with ADF-STEM | 1-gen-2007 | A., Parisini; Giubertoni, Damiano; Bersani, Massimo; Vittorio, Morandi; Pier Giorgio, Merli; Jaap van den, Berg | |
Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" | 1-gen-2007 | Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; M. A., Foad; R., Doherty; P., Pianetta; J. C., Woicik; M. A., Sahiner |
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