Ruzzarin, Maria
 Distribuzione geografica
Continente #
EU - Europa 1.375
AS - Asia 611
NA - Nord America 497
SA - Sud America 112
AF - Africa 9
Totale 2.604
Nazione #
IT - Italia 598
US - Stati Uniti d'America 463
RU - Federazione Russa 384
SG - Singapore 203
CN - Cina 148
HK - Hong Kong 148
BR - Brasile 106
DE - Germania 96
FR - Francia 72
NL - Olanda 52
JP - Giappone 43
FI - Finlandia 32
CH - Svizzera 29
KR - Corea 28
CA - Canada 25
ES - Italia 24
GB - Regno Unito 19
IE - Irlanda 14
AT - Austria 13
IN - India 13
TW - Taiwan 13
BE - Belgio 11
CZ - Repubblica Ceca 7
LT - Lituania 5
PL - Polonia 5
DZ - Algeria 4
MX - Messico 4
SI - Slovenia 4
IQ - Iraq 3
TR - Turchia 3
AR - Argentina 2
HN - Honduras 2
KE - Kenya 2
MY - Malesia 2
SE - Svezia 2
SK - Slovacchia (Repubblica Slovacca) 2
ZA - Sudafrica 2
AL - Albania 1
AZ - Azerbaigian 1
BD - Bangladesh 1
BG - Bulgaria 1
BY - Bielorussia 1
CR - Costa Rica 1
EC - Ecuador 1
IL - Israele 1
JM - Giamaica 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
NO - Norvegia 1
PA - Panama 1
PE - Perù 1
PK - Pakistan 1
UA - Ucraina 1
UY - Uruguay 1
UZ - Uzbekistan 1
VE - Venezuela 1
Totale 2.604
Città #
Singapore 164
Trento 153
Hong Kong 130
Moscow 98
The Dalles 56
Milan 50
Beijing 42
Bologna 40
Hefei 39
Ashburn 32
Munich 27
Santa Clara 24
Boardman 23
Tokyo 21
Helsinki 19
Bari 18
Chandler 15
Turin 15
Davis 14
L’Aquila 13
Naples 13
Dublin 12
Turku 12
Brussels 11
Florence 11
Los Angeles 11
Raleigh 11
Falkenstein 10
Genoa 10
Nuremberg 10
Shanghai 10
Sherbrooke 10
Verona 10
Annemasse 9
Rome 9
Barcelona 8
Castello d'Argile 8
New York 8
Seoul 8
Vienna 8
Geneva 7
Kronberg 6
Miami 6
Phoenix 6
Rovereto 6
Varese 6
Vimercate 6
Yeongdeungpo-gu 6
Aachen 5
Brno 5
Carrières-sous-Poissy 5
Dallas 5
Knoxville 5
New Taipei City 5
Seocho-gu 5
Toronto 5
Amsterdam 4
Bolzano 4
Dijon 4
Ferney-Voltaire 4
Frankfurt am Main 4
Ljubljana 4
Marnaz 4
Marseille 4
Montreal 4
Padua 4
Pune 4
Rubano 4
Shinchiba 4
São Paulo 4
Wuxi 4
Yokohama 4
Alzira 3
Bellaterra 3
Benevento 3
Bergamo 3
Blumenau 3
Boydton 3
Brooklyn 3
Campinas 3
Cortenuova 3
Cunevo 3
Curitiba 3
Faenza 3
Ferrara 3
Guangzhou 3
Kolkata 3
Lakewood 3
Lomazzo 3
Madison 3
Massy 3
Mexico City 3
Onex 3
Osimo 3
Padova 3
Ribeirão Preto 3
Sacramento 3
Saint-Genis-Pouilly 3
Salvador 3
San Francisco 3
Totale 1.429
Nome #
Back Side Illuminated SiPM from NIR to NUV light detection 422
NUV-HD SiPMs with Metal-filled Trenches 374
3D integration technologies for custom SiPM: From BSI to TSV interconnections 143
Silicon Photomultipliers technologies for 3D integration 142
3D integration approaches for Silicon Photomultipliers: from backside-illuminated to Through Silicon Via interconnections 80
Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection 77
First results of Back-side Illuminated SiPM for VUV/NUV light detection fabricated at Fondazione Bruno Kessler 75
NUV-HD SiPMs with metal-filled trenches 70
Back-side Illuminated SiPM for VUV/NUV light detection at Fondazione Bruno Kessler: first results 66
Timing performance of FBK SiPM NUV-HD-MT technology using LYSO:Ce:Ca crystal 63
FBK SiPM NUV-HD-MT technology: from an improved SPICE simulation to the timing performance 62
Radiation Damage on SiPM for High Energy Physics Experiments in space missions 59
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 58
Timing performance characterization of FBK SiPM NUV-HD-MT technology 57
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 53
Reliability and failure analysis in power GaN-HEMTs: An overview 52
Degradation of vertical GaN FETs under gate and drain stress 47
Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection 46
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 45
Timing performance characterization of FBK SiPM NUV-HD-MT technology 45
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 42
Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs 41
DIGILOG: A digital-analog SiPM towards 10 ps prompt-photon tagging in TOF-PET 41
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 40
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments 40
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors 40
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress 39
Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection 38
Limits of the time resolution and avalanche build-up analysis of FBK NUV-HD-MT SiPMs 36
Degradation Mechanisms of GaN-Based Vertical Devices: A Review 36
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 34
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 34
Exploration of gate trench module for vertical GaN devices 32
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 30
Instability of Dynamic- RON and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 28
Positive and negative threshold voltage instabilities in GaN-based transistors 28
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator 28
Timing performance of FBK SiPM NUV-HD-MT technology using LYSO:Ce:Ca crystals 26
Terzina on-board NUSES: a pathfinder for EAS Cherenkov Light Detection from space 25
Totale 2.694
Categoria #
all - tutte 8.948
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.948


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202222 0 0 0 0 0 0 0 0 8 3 3 8
2022/2023197 6 10 2 12 18 7 13 8 45 34 13 29
2023/2024596 31 42 26 29 40 37 51 57 55 46 48 134
2024/20251.879 105 88 207 71 47 74 50 138 546 221 277 55
Totale 2.694