We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V analysis. Under positive gate stress, small negative Vth shifts (low stress) and a positive Vth shifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator interface. Trapping effects are eliminated through exposure to UV light; wavelength-dependent analysis extracts the threshold de-trapping energy ≈2.95 eV. UV-assisted CV measurements describe the distribution of states at the GaN/Al2O3 interface. The described methodology provides an understanding and assessment of trapping mechanisms in vertical GaN transistors.
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Ruzzarin, M.;
2020-01-01
Abstract
We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V analysis. Under positive gate stress, small negative Vth shifts (low stress) and a positive Vth shifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator interface. Trapping effects are eliminated through exposure to UV light; wavelength-dependent analysis extracts the threshold de-trapping energy ≈2.95 eV. UV-assisted CV measurements describe the distribution of states at the GaN/Al2O3 interface. The described methodology provides an understanding and assessment of trapping mechanisms in vertical GaN transistors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
