Ruzzarin, Maria
Ruzzarin, Maria
CRS
3D integration approaches for Silicon Photomultipliers: from backside-illuminated to Through Silicon Via interconnections
2022-01-01 Parellada Monreal, L.; Acerbi, F.; Ficorella, A.; Franzoi, A.; Gola, A. G.; Merzi, S.; Nawaz, A.; Ruzzarin, M.; Paternoster, G.
3D integration technologies for custom SiPM: From BSI to TSV interconnections
2023-01-01 Parellada Monreal, L.; Acerbi, F.; Ficorella, A.; Franzoi, A.; Gola, A.; Merzi, S.; Nawaz, A.; Ruzzarin, M.; Paternoster, G.
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020-01-01 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Back Side Illuminated SiPM from NIR to NUV light detection
2021-01-01 Parellada Monreal, L.; Paternoster, G.; Gola, A. G.; Acerbi, F.; Bellutti, P.; Borghi, G.; Ferrario, L.; Ficorella, A.; Merzi, S.; Ruzzarin, M.; Mazzi, A.
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
2019-01-01 Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress
2018-01-01 Ruzzarin, M.; Meneghini, M.; Barbato, A.; Padovan, V.; Haeberlen, O.; Silvestri, M.; Detzel, T.; Meneghesso, G.; Zanoni, E.
Degradation Mechanisms of GaN-Based Vertical Devices: A Review
2020-01-01 Meneghini, M.; Fabris, E.; Ruzzarin, M.; De Santi, C.; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Degradation of vertical GaN FETs under gate and drain stress
2018-01-01 Ruzzarin, M.; Meneghini, M.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sun, M.; Palacios, T.
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
2018-01-01 Ruzzarin, M.; Meneghini, M.; De Santi, C.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
2019-01-01 Ruzzarin, M.; Meneghini, M.; De Santi, C.; Neviani, A.; Yu, F.; Strempel, K.; Fatahilah, M. F.; Witzigmann, B.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.
DIGILOG: A digital-analog SiPM towards 10 ps prompt-photon tagging in TOF-PET
2023-01-01 Gundacker, S.; Bruschini, C.; Gola, A.; Herweg, K.; Merzi, S.; Muntean, A.; Nadig, V.; Parellada Monreal, L.; Paternoster, G.; Penna, M.; Ruzzarin, M.; Charbon, E.; Schulz, V.
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
2016-01-01 Ruzzarin, M.; Meneghini, M.; Rossetto, I.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Decoutere, S.; Meneghesso, G.; Zanoni, E.
Exploration of gate trench module for vertical GaN devices
2020-01-01 Ruzzarin, M.; Geens, K.; Borga, M.; Liang, H.; You, S.; Bakeroot, B.; Decoutere, S.; de Santi, C.; Neviani, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift
2017-01-01 Dalcanale, S.; Meneghini, M.; Tajalli, A.; Rossetto, I.; Ruzzarin, M.; Zanoni, E.; Meneghesso, G.; Moens, P.; Banerjee, A.; Vandeweghe, S.
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
2019-01-01 Ge, M.; Ruzzarin, M.; Chen, D.; Lu, H.; Yu, X.; Zhou, J.; De Santi, C.; Zhang, R.; Zheng, Y.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)
2019-01-01 Ruzzarin, M.; Borga, M.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Ji, D.; Li, W.; Chan, S. H.; Agarwal, A.; Gupta, C.; Keller, S.; Mishra, U. K.; Chowdhury, S.
Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection
2023-01-01 Parellada Monreal, Laura; Acerbi, F; Ficorella, A; Franzoi, A; Gola, A; Merzi, S; Ruzzarin, M; Zorzi, N; Paternoster, G
Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection
2024-01-01 Gola, Alberto Giacomo; Paternoster, Giovanni; Dalmasson, Jacopo; Parellada Monreal, Laura; Ruzzarin, Maria
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator
2020-01-01 Ruzzarin, M.; De Santi, C.; Yu, F.; Fatahilah, M. F.; Strempel, K.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Instability of Dynamic- RON and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors
2017-01-01 Ruzzarin, M.; Meneghini, M.; Bisi, D.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 3D integration approaches for Silicon Photomultipliers: from backside-illuminated to Through Silicon Via interconnections | 1-gen-2022 | Parellada Monreal, L.; Acerbi, F.; Ficorella, A.; Franzoi, A.; Gola, A. G.; Merzi, S.; Nawaz, A.; Ruzzarin, M.; Paternoster, G. | |
| 3D integration technologies for custom SiPM: From BSI to TSV interconnections | 1-gen-2023 | Parellada Monreal, L.; Acerbi, F.; Ficorella, A.; Franzoi, A.; Gola, A.; Merzi, S.; Nawaz, A.; Ruzzarin, M.; Paternoster, G. | |
| Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs | 1-gen-2020 | Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M. | |
| Back Side Illuminated SiPM from NIR to NUV light detection | 1-gen-2021 | Parellada Monreal, L.; Paternoster, G.; Gola, A. G.; Acerbi, F.; Bellutti, P.; Borghi, G.; Ferrario, L.; Ficorella, A.; Merzi, S.; Ruzzarin, M.; Mazzi, A. | |
| Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias | 1-gen-2019 | Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M. | |
| Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress | 1-gen-2018 | Ruzzarin, M.; Meneghini, M.; Barbato, A.; Padovan, V.; Haeberlen, O.; Silvestri, M.; Detzel, T.; Meneghesso, G.; Zanoni, E. | |
| Degradation Mechanisms of GaN-Based Vertical Devices: A Review | 1-gen-2020 | Meneghini, M.; Fabris, E.; Ruzzarin, M.; De Santi, C.; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E. | |
| Degradation of vertical GaN FETs under gate and drain stress | 1-gen-2018 | Ruzzarin, M.; Meneghini, M.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sun, M.; Palacios, T. | |
| Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments | 1-gen-2018 | Ruzzarin, M.; Meneghini, M.; De Santi, C.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E. | |
| Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors | 1-gen-2019 | Ruzzarin, M.; Meneghini, M.; De Santi, C.; Neviani, A.; Yu, F.; Strempel, K.; Fatahilah, M. F.; Witzigmann, B.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E. | |
| DIGILOG: A digital-analog SiPM towards 10 ps prompt-photon tagging in TOF-PET | 1-gen-2023 | Gundacker, S.; Bruschini, C.; Gola, A.; Herweg, K.; Merzi, S.; Muntean, A.; Nadig, V.; Parellada Monreal, L.; Paternoster, G.; Penna, M.; Ruzzarin, M.; Charbon, E.; Schulz, V. | |
| Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress | 1-gen-2016 | Ruzzarin, M.; Meneghini, M.; Rossetto, I.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Decoutere, S.; Meneghesso, G.; Zanoni, E. | |
| Exploration of gate trench module for vertical GaN devices | 1-gen-2020 | Ruzzarin, M.; Geens, K.; Borga, M.; Liang, H.; You, S.; Bakeroot, B.; Decoutere, S.; de Santi, C.; Neviani, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E. | |
| GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift | 1-gen-2017 | Dalcanale, S.; Meneghini, M.; Tajalli, A.; Rossetto, I.; Ruzzarin, M.; Zanoni, E.; Meneghesso, G.; Moens, P.; Banerjee, A.; Vandeweghe, S. | |
| Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors | 1-gen-2019 | Ge, M.; Ruzzarin, M.; Chen, D.; Lu, H.; Yu, X.; Zhou, J.; De Santi, C.; Zhang, R.; Zheng, Y.; Meneghini, M.; Meneghesso, G.; Zanoni, E. | |
| Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) | 1-gen-2019 | Ruzzarin, M.; Borga, M.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Ji, D.; Li, W.; Chan, S. H.; Agarwal, A.; Gupta, C.; Keller, S.; Mishra, U. K.; Chowdhury, S. | |
| Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection | 1-gen-2023 | Parellada Monreal, Laura; Acerbi, F; Ficorella, A; Franzoi, A; Gola, A; Merzi, S; Ruzzarin, M; Zorzi, N; Paternoster, G | |
| Glass-free SiPMs with Through Silicon Vias for VUV/NUV light detection | 1-gen-2024 | Gola, Alberto Giacomo; Paternoster, Giovanni; Dalmasson, Jacopo; Parellada Monreal, Laura; Ruzzarin, Maria | |
| Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator | 1-gen-2020 | Ruzzarin, M.; De Santi, C.; Yu, F.; Fatahilah, M. F.; Strempel, K.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. | |
| Instability of Dynamic- RON and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors | 1-gen-2017 | Ruzzarin, M.; Meneghini, M.; Bisi, D.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E. |