Vasilache, Dan Adrian
 Distribuzione geografica
Continente #
NA - Nord America 690
EU - Europa 364
AS - Asia 85
Continente sconosciuto - Info sul continente non disponibili 7
SA - Sud America 2
Totale 1.148
Nazione #
US - Stati Uniti d'America 690
SE - Svezia 84
DE - Germania 76
UA - Ucraina 57
FI - Finlandia 44
CN - Cina 27
HK - Hong Kong 26
IE - Irlanda 26
BE - Belgio 18
VN - Vietnam 18
IT - Italia 12
RU - Federazione Russa 12
CZ - Repubblica Ceca 11
GB - Regno Unito 10
EU - Europa 7
SG - Singapore 7
FR - Francia 4
IN - India 4
NL - Olanda 4
PL - Polonia 3
IR - Iran 2
PT - Portogallo 2
AR - Argentina 1
BR - Brasile 1
CH - Svizzera 1
TR - Turchia 1
Totale 1.148
Città #
Chandler 170
Jacksonville 124
Ann Arbor 61
Ashburn 35
New York 34
Wilmington 33
Helsinki 27
Dublin 26
Hong Kong 26
Boardman 25
Brussels 18
Dong Ket 18
Woodbridge 18
Brooklyn 17
Shanghai 17
Kronberg 16
Dearborn 15
Brno 11
Phoenix 9
Beijing 7
Hanover 6
Trento 6
Seattle 5
Singapore 5
Miami 4
Munich 4
Redmond 4
Mountain View 3
Pune 3
Saint Petersburg 3
Santa Clara 3
Gunzenhausen 2
Radomsko 2
Redwood City 2
Tappahannock 2
Zanjan 2
Absecon 1
Albignasego 1
Cologne 1
Des Moines 1
Falkenstein 1
Ferrara 1
Florence 1
Hefei 1
Leawood 1
Los Angeles 1
Monmouth Junction 1
Mysiadło 1
Nanchang 1
North Bergen 1
Nuremberg 1
San Jose 1
Sanayi 1
Senigallia 1
St Petersburg 1
São Luís 1
Villigen 1
Totale 784
Nome #
Conductive through silicon via holes for RF applications 102
Wafer resistivity influence over DRIE processes for TSVs manufacturing 91
OPTIMIZED DRIE PROCESS FOR TAPERED WALLS THROUGH WAFER VIA HOLES MANUFACTURING 79
Thermocompression bonding for 3D RF MEMS devices using gold and silver as intermediate layer 74
Fabrication of Through-Wafer Interconnections by Gold Electroplating 72
STUDY OF AN ELECTRO-MECHANIC MECHANISM EXPLOITING IN-PLANE ROTATION FOR THE REALIZATION OF TUNEABLE CAPACITORS 71
BRIDGE TYPE AND CANTILEVER TYPE MEMS SWITCH STRUCTURES 70
New Deep Reactive Ion Etching process for through wafer via manufacturing 69
Variable isotropy Deep RIE process for through wafer via holes manufacturing 68
V-shape through wafer via manufactured by drie variable isotropy process 67
Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications 62
Tappered walls via holes manufactured using DRIE variable isotropy process 60
Tapered walls via holes manufactured using DRIE variable isotropy process 60
Design and Optimization of Microwave Lumped Elements Fllters using mixed Circuital-Electromagnetic Simulations 58
Tapered walls via holes manufactured using DRIE variable isotropy process 56
MEMS Switch for 60 GHz Band 55
Compact lumped elements micromachined band-pass filters with discrete switching for 1.8/5.2 GHz applications 44
Totale 1.158
Categoria #
all - tutte 6.066
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.066


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020120 0 0 2 3 23 9 22 4 20 7 17 13
2020/2021194 27 0 18 16 17 8 26 2 0 34 12 34
2021/2022117 6 1 0 29 2 0 5 13 3 7 33 18
2022/2023313 15 37 6 63 17 49 11 17 62 21 11 4
2023/2024211 22 9 25 10 11 52 13 22 1 28 3 15
2024/202517 14 3 0 0 0 0 0 0 0 0 0 0
Totale 1.158