This paper presents a new method of tapered walls through silicon wafers via holes (TSV) manufacturing, using a variable isotropy DRIE (Deep Reactive Ion Etching) process type. TSV manufacturing method is presented (based on Bosch type anisotropic etching), as well as process optimization for a very good control over the wall angles.

OPTIMIZED DRIE PROCESS FOR TAPERED WALLS THROUGH WAFER VIA HOLES MANUFACTURING

Vasilache, Dan Adrian;Colpo, Sabrina;Margesin, Benno;Giacomozzi, Flavio;Chistè, Matteo;
2012

Abstract

This paper presents a new method of tapered walls through silicon wafers via holes (TSV) manufacturing, using a variable isotropy DRIE (Deep Reactive Ion Etching) process type. TSV manufacturing method is presented (based on Bosch type anisotropic etching), as well as process optimization for a very good control over the wall angles.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/78401
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact