This paper presents a new method of tapered walls through silicon wafers via holes (TSV) manufacturing, using a variable isotropy DRIE (Deep Reactive Ion Etching) process type. TSV manufacturing method is presented (based on Bosch type anisotropic etching), as well as process optimization for a very good control over the wall angles.
OPTIMIZED DRIE PROCESS FOR TAPERED WALLS THROUGH WAFER VIA HOLES MANUFACTURING
Vasilache, Dan Adrian;Colpo, Sabrina;Margesin, Benno;Giacomozzi, Flavio;Chistè, Matteo;
2012-01-01
Abstract
This paper presents a new method of tapered walls through silicon wafers via holes (TSV) manufacturing, using a variable isotropy DRIE (Deep Reactive Ion Etching) process type. TSV manufacturing method is presented (based on Bosch type anisotropic etching), as well as process optimization for a very good control over the wall angles.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
