AFM and Raman study of graphene deposited on silicon surfaces nanostructured by ion beam irradiation

Nanoscale structures were produced on silicon surfaces by low-energy O ion irradiation: periodic rippled or terraced patterns formed spontaneously, depending on the chosen combination of beam incidence angle and ion fluence. Atomic force microscopy image processing and analysis accurately described the obtained nano-topographies. Graphene monolayers grown by chemical vapour deposition were transferred onto the nanostructured silicon surfaces. The interfacial interaction between the textured surface and the deposited graphene governs the conformation of the thin carbon layer; the resulting different degree of regularity and conformality of the substrate-induced graphene corrugations was studied and it was related to the distinctive topographical features of the silicon nanostructures. Raman spectroscopy revealed specific features of the strain caused by the alternating suspension and contact with the underlying nanostructures and the consequent modulation of the silicon-graphene interaction. This article is protected by copyright. All rights reserved.