The present work aims at investigating the effects that different levels of Nd atoms incorporation can have on the microstructure and chemical structure of ZnO thin films. Undoped and Nd-doped ZnO films were deposited by RF co-sputtering from pure ZnO and metallic Nd targets in Ar plasma onto Si, quartz and glass substrates. The Nd concentration in the ZnO host matrix was varied in the range 0-26 at. % by varying the bias applied to the Nd target. A comprehensive characterization of the films properties was performed by X-ray Photoelectron and Auger Electron spectroscopies, X-ray Fluorescence analysis, X-ray diffraction and Scanning Electron microscopy. At low Nd atomic concentration (Nd/Zn<0,07) Nd atoms were successfully incorporated into the ZnO matrix, whose crystalline structure was preserved. A deterioration of the ZnO würtzite phase was observed on the contrary with increasing Nd content in the films together with the precipitation of a second phase, identified as Nd2O3.
|Titolo:||Effect of Nd3+ incorporation on the microstructure and chemical structure of RF sputtered ZnO thin films|
|Data di pubblicazione:||2013|
|Appare nelle tipologie:||1.1 Articolo in rivista|