The International Technology Roadmap for Semiconductors ranks dopant profiling as one of the most difficult challenges for analysis of semiconductors. Dopant mapping in the scanning electron microscope ~SEM! has the potential to provide a solution. This technique has not yet found widespread application, however, mainly due to the lack of a comprehensive theoretical model, uncertain quantification, and its inability to differentiate doping levels in n-type silicon. Although a Monte Carlo model was recently published that closely matched experimental data obtained in p-doped silicon to data obtained from the theoretical model, a large discrepancy between experimental data obtained for n-type silicon was found. Here we present a Monte Carlo model that provides close matches between experimental and calculated data in both n- and p-type silicon, paving the way for a widespread application of SEM dopant contrast.

The Effect of Oxide Overlayers on Secondary Electron Dopant Mapping

Dapor, Maurizio;
2009

Abstract

The International Technology Roadmap for Semiconductors ranks dopant profiling as one of the most difficult challenges for analysis of semiconductors. Dopant mapping in the scanning electron microscope ~SEM! has the potential to provide a solution. This technique has not yet found widespread application, however, mainly due to the lack of a comprehensive theoretical model, uncertain quantification, and its inability to differentiate doping levels in n-type silicon. Although a Monte Carlo model was recently published that closely matched experimental data obtained in p-doped silicon to data obtained from the theoretical model, a large discrepancy between experimental data obtained for n-type silicon was found. Here we present a Monte Carlo model that provides close matches between experimental and calculated data in both n- and p-type silicon, paving the way for a widespread application of SEM dopant contrast.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/4853
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact