Nanoporous silica (NPS) materials are compelling candidates for future microelectronic and optoelectronic applications requiring ultra-low dielectric constant (ULK) and /or refractive indices, respectively. Porous materials provide the ability to control porosity and hence tailor the performance of the material to meet the requirements of future generations of integrated circuits. The nanoscale pores of NPS material are created by the removal of organic groups, a sacrificial phase, from the silica matrix. Porosity reduces thermal and mechanical properties of NPS materials as compared with silicon dioxide. Materials transport also becomes easier in the porous structure. These issues make the integration of porous material into back-end-of-line devices challenging.

Effects of Plasma Etch and Stripping on ULK Materials” Future Fab International 19 (2005) 86-89

Iacob, Erica;
2005

Abstract

Nanoporous silica (NPS) materials are compelling candidates for future microelectronic and optoelectronic applications requiring ultra-low dielectric constant (ULK) and /or refractive indices, respectively. Porous materials provide the ability to control porosity and hence tailor the performance of the material to meet the requirements of future generations of integrated circuits. The nanoscale pores of NPS material are created by the removal of organic groups, a sacrificial phase, from the silica matrix. Porosity reduces thermal and mechanical properties of NPS materials as compared with silicon dioxide. Materials transport also becomes easier in the porous structure. These issues make the integration of porous material into back-end-of-line devices challenging.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/4197
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