The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200 °C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.
Effect of hydrogen incorporation temperature in in plane -engineered GaAsN/GaAsN:H heterostructures
Giubertoni, Damiano;Bersani, Massimo;
2008-01-01
Abstract
The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200 °C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
