The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200 °C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.

Effect of hydrogen incorporation temperature in in plane -engineered GaAsN/GaAsN:H heterostructures

Giubertoni, Damiano;Bersani, Massimo;
2008

Abstract

The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200 °C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3752
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