Controling the early stages of pentacene growth by supersonic molecular beam deposition

The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.

Titolo: Controling the early stages of pentacene growth by supersonic molecular beam deposition
Autori: 
Iacob, Erica
Iannotta, Salvatore
mostra contributor esterni 
Data di pubblicazione: 2007
Rivista: 
PHYSICAL REVIEW LETTERS  
Abstract: The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.
Handle: http://hdl.handle.net/11582/3705
Appare nelle tipologie:1.1 Articolo in rivista

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