Controling the early stages of pentacene growth by supersonic molecular beam deposition

The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.



Titolo: Controling the early stages of pentacene growth by supersonic molecular beam deposition
Autori: 
Iacob, Erica
Iannotta, Salvatore
mostra contributor esterni 
Data di pubblicazione: 2007
Rivista: 
PHYSICAL REVIEW LETTERS  
Abstract: The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.
Handle: http://hdl.handle.net/11582/3705
Appare nelle tipologie:1.1 Articolo in rivista

File in questo prodotto:
Non ci sono file associati a questo prodotto.
Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11582/3705
  • Citazioni
  • PubMed Central ND

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
 
 
 
Powered by IRIS-about IRIS-Utilizzo dei cookie
Logo CINECA  Copyright © 2021