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EnglishThe key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.
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| Titolo: | Controling the early stages of pentacene growth by supersonic molecular beam deposition |
| Autori: | |
| Data di pubblicazione: | 2007 |
| Rivista: | |
| Abstract: | The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged. |
| Handle: | http://hdl.handle.net/11582/3705 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11582/3705
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