The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.

Controling the early stages of pentacene growth by supersonic molecular beam deposition

Iacob, Erica;Iannotta, Salvatore
2007

Abstract

The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3705
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