The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.
Controling the early stages of pentacene growth by supersonic molecular beam deposition
Iacob, Erica;Iannotta, Salvatore
2007-01-01
Abstract
The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx=Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek > 5–6 eV. Optimal conditions to produce single crystalline films are envisaged.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.