The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.

Peculiarities of the hydrogenated In(AsN) alloy

Giubertoni, Damiano;
2015

Abstract

The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/300722
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