We report some preliminary results concerning the microstrucure of Al-1%Si thin films obtained with a glancing angle x-ray diffractometer. Preferred growth along {111} planes has been observed to depend both on the deposition parameters, such as temperature, and on the substrate material. The resistivity of the films has been shown to be decreasing as the ratio between the intensities of the (111) and (200) diffraction peaks increases.

Seeman-Bohlin x-ray diffraction study of Al-1%Si thin films used in ULSI devices

Dapor, Maurizio;Cicolini, Guido;Giacomozzi, Flavio;Boscardin, Maurizio;
1992

Abstract

We report some preliminary results concerning the microstrucure of Al-1%Si thin films obtained with a glancing angle x-ray diffractometer. Preferred growth along {111} planes has been observed to depend both on the deposition parameters, such as temperature, and on the substrate material. The resistivity of the films has been shown to be decreasing as the ratio between the intensities of the (111) and (200) diffraction peaks increases.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/2833
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