Non alloyed Pd/Ge ohmic contacts have been studied for applications to GaAs power metal-semiconductor field effect transistors (MESFETs) and compared with conventional AuGeNi alloyed contacts.
Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: technology and performance
Dapor, Maurizio;
1990-01-01
Abstract
Non alloyed Pd/Ge ohmic contacts have been studied for applications to GaAs power metal-semiconductor field effect transistors (MESFETs) and compared with conventional AuGeNi alloyed contacts.File in questo prodotto:
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