Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: technology and performance

Non alloyed Pd/Ge ohmic contacts have been studied for applications to GaAs power metal-semiconductor field effect transistors (MESFETs) and compared with conventional AuGeNi alloyed contacts.



Titolo: Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: technology and performance
Autori: 
Dapor, Maurizio
mostra contributor esterni 
Data di pubblicazione: 1990
Rivista: 
THIN SOLID FILMS  
Abstract: Non alloyed Pd/Ge ohmic contacts have been studied for applications to GaAs power metal-semiconductor field effect transistors (MESFETs) and compared with conventional AuGeNi alloyed contacts.
Handle: http://hdl.handle.net/11582/2823
Appare nelle tipologie:1.1 Articolo in rivista

File in questo prodotto:
Non ci sono file associati a questo prodotto.
Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11582/2823
  • Citazioni
  • PubMed Central ND

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
 
 
 
Powered by IRIS-about IRIS-Utilizzo dei cookie
Logo CINECA  Copyright © 2021