This paper reports on the characterization of films of titanium nitride (TiN) obtained by reactive sputtering of titanium in a nitrogen-rich ambient (r.f. sputtering) and by nitrogen implantation during vapour deposition of titanium thin films.In order to ger a complete picture of the properties of the atoms in these systems the thin films were charcterized with Auger electron spectroscopy and with a Seeman-Bohlin x-ray diffractometer. The overlayers were analyzed by four-point probe to evaluate the resystivity.The observed chemical and physical properties of the films strongly depend on both the growth technique and the particular parameters employed.
Physical properties of TiN thin films
Dapor, Maurizio;Giacomozzi, Flavio;Antonella Cavalleri
1989-01-01
Abstract
This paper reports on the characterization of films of titanium nitride (TiN) obtained by reactive sputtering of titanium in a nitrogen-rich ambient (r.f. sputtering) and by nitrogen implantation during vapour deposition of titanium thin films.In order to ger a complete picture of the properties of the atoms in these systems the thin films were charcterized with Auger electron spectroscopy and with a Seeman-Bohlin x-ray diffractometer. The overlayers were analyzed by four-point probe to evaluate the resystivity.The observed chemical and physical properties of the films strongly depend on both the growth technique and the particular parameters employed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
