We have produced Ti-N films with d.c. reactive sputtering at different nitrogen concentrations. The experimental results of resistivity vs. WDS K alpha line sihfts indicate a possible relationship between these two quantities.
Stoichiometry in Ti-N barrier layers studied by x-ray emission spectroscopy
Dapor, Maurizio;
1987-01-01
Abstract
We have produced Ti-N films with d.c. reactive sputtering at different nitrogen concentrations. The experimental results of resistivity vs. WDS K alpha line sihfts indicate a possible relationship between these two quantities.File in questo prodotto:
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